Overview
The MJD112T4 is an NPN power Darlington transistor manufactured by STMicroelectronics. It is part of the MJD112 series, which includes complementary PNP devices such as the MJD117. This transistor is designed for general-purpose power and switching applications, including output or driver stages in switching regulators, converters, and power amplifiers. The device is built using planar technology with a 'base island' layout and a monolithic Darlington configuration, which integrates an antiparallel collector-emitter diode.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Polarity | NPN | |
| Collector-Base Voltage (VCBO) | 100 | V |
| Collector-Emitter Voltage (VCEO) | 100 | V |
| Emitter-Base Voltage (VEBO) | 5 | V |
| Collector Current (IC) | 2 | A |
| Collector Peak Current (ICM) | 4 | A |
| Base Current (IB) | 0.05 | A |
| Total Dissipation at Tcase = 25°C (PTOT) | 20 | W |
| Operating Junction Temperature (TJ) | -65 to 150 | °C |
| Transition Frequency (fT) | 25 | MHz |
| DC Current Gain (hFE) | 1000 - 12000 | |
| Package | DPAK (TO-252) | |
| Rohs Compliance | Ecopack2 |
Key Features
- Monolithic Darlington configuration with integrated antiparallel collector-emitter diode.
- Good hFE linearity and high fT frequency.
- High DC current gain (hFE = 2,500 typ. at IC = 2.0 A).
- Complementary pairs simplify designs (MJD112 for NPN and MJD117 for PNP).
- Pb-free and RoHS compliant.
- Surface mount replacements for TIP110-TIP117 series).
Applications
- Linear and switching industrial equipment).
- Output or driver stages in switching regulators, converters, and power amplifiers).
- General-purpose power and switching applications).
Q & A
- What is the polarity of the MJD112T4 transistor?
The MJD112T4 is an NPN transistor.
- What is the maximum collector-emitter voltage (VCEO) of the MJD112T4?
The maximum collector-emitter voltage (VCEO) is 100 V.
- What is the maximum collector current (IC) of the MJD112T4?
The maximum collector current (IC) is 2 A.
- What is the typical DC current gain (hFE) of the MJD112T4?
The typical DC current gain (hFE) is 2,500 at IC = 2.0 A.
- What is the transition frequency (fT) of the MJD112T4?
The transition frequency (fT) is 25 MHz.
- What package type is the MJD112T4 available in?
The MJD112T4 is available in the DPAK (TO-252) package.
- Is the MJD112T4 RoHS compliant?
- What are some common applications for the MJD112T4?
- Does the MJD112T4 have an integrated antiparallel collector-emitter diode?
- What is the maximum operating junction temperature (TJ) of the MJD112T4?
