Overview
The MJD117T4 is a PNP bipolar Darlington transistor manufactured by STMicroelectronics. This device is part of the MJD117 series and is packaged in a DPAK (TO-252) surface mount configuration. It is designed for general-purpose power and switching applications, offering high current gain and robust thermal performance. The MJD117T4 is electrically similar to popular TIP32 series transistors and is RoHS compliant and Pb-free, making it suitable for a wide range of modern electronic systems.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Base Voltage (VCB) | 100 | V |
| Collector-Emitter Voltage (VCEO) | 100 | V |
| Emitter-Base Voltage (VEB) | 5 | V |
| Collector Current (IC) | 2 | A |
| Peak Collector Current (ICM) | 4 | A |
| Base Current (IB) | 0.05 | A |
| Total Power Dissipation at Tcase = 25°C (PTOT) | 20 | W |
| Thermal Resistance Junction-Case (RthJC) | 6.25 | °C/W |
| Maximum Operating Junction Temperature (TJ) | 150 | °C |
| Storage Temperature (TSTG) | -65 to 150 | °C |
Key Features
- Monolithic Darlington configuration with integrated antiparallel collector-emitter diode.
- Good hFE linearity and high fT frequency.
- High current gain and robust thermal performance.
- RoHS compliant and Pb-free, suitable for modern electronic systems.
- Electrically similar to popular TIP32 series transistors.
- Available in DPAK (TO-252) surface mount package.
Applications
- Linear and switching industrial equipment.
- Output or driver stages in applications such as switching regulators, converters, and power amplifiers.
- General-purpose power and switching applications).
Q & A
- What is the collector-emitter voltage rating of the MJD117T4 transistor?
The collector-emitter voltage (VCEO) rating is 100 V).
- What is the maximum collector current for the MJD117T4 transistor?
The maximum collector current (IC) is 2 A, with a peak collector current (ICM) of 4 A).
- What is the thermal resistance junction-case (RthJC) of the MJD117T4 transistor?
The thermal resistance junction-case (RthJC) is 6.25 °C/W).
- What is the maximum operating junction temperature for the MJD117T4 transistor?
The maximum operating junction temperature (TJ) is 150 °C).
- Is the MJD117T4 transistor RoHS compliant and Pb-free?
- What package type is the MJD117T4 transistor available in?
The MJD117T4 transistor is available in a DPAK (TO-252) surface mount package).
- What are some typical applications for the MJD117T4 transistor?
Typical applications include linear and switching industrial equipment, output or driver stages in switching regulators, converters, and power amplifiers).
- What is the significance of the integrated antiparallel collector-emitter diode in the MJD117T4 transistor?
The integrated antiparallel collector-emitter diode helps in protecting the transistor from back-EMF and improves its overall performance in switching applications).
- How does the MJD117T4 compare to other similar transistors like the TIP32 series?
The MJD117T4 is electrically similar to the TIP32 series, offering comparable performance characteristics but with the added benefits of being RoHS compliant and Pb-free).
- What is the storage temperature range for the MJD117T4 transistor?
The storage temperature range (TSTG) is -65 to 150 °C).
