Overview
The MJD122T4 is a high-performance NPN Darlington transistor manufactured by STMicroelectronics. It is part of the MJD122 and MJD127 series, which form a complementary NPN-PNP pair. These transistors are produced using planar technology with a 'base island' layout and a monolithic Darlington configuration, resulting in exceptional high gain performance and very low collector-emitter saturation voltage.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Base Voltage (VCBO) | 100 | V |
| Collector-Emitter Voltage (VCEO) | 100 | V |
| Emitter-Base Voltage (VEBO) | 5 | V |
| Collector Current (IC) | 8 | A |
| Collector Peak Current (ICM) | 16 | A |
| Base Current (IB) | 0.12 | A |
| Total Dissipation at Tcase = 25°C (PTOT) | 20 | W |
| Max. Operating Junction Temperature (TJ) | 150 | °C |
| Thermal Resistance Junction-Case (Rthj-c) | 6.25 | °C/W |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 2 V (IC = 4 A, IB = 16 mA) | V |
| Base-Emitter Saturation Voltage (VBE(sat)) | 4.5 V (IC = 8 A, IB = 80 mA) | V |
| DC Current Gain (hFE) | 1000 - 12000 |
Key Features
- Low collector-emitter saturation voltage
- Integrated antiparallel collector-emitter diode
- High gain performance due to monolithic Darlington configuration
- Manufactured using planar technology with 'base island' layout
- Available in DPAK package with tape and reel packaging option
- Compliant with ECOPACK environmental standards
Applications
- General purpose linear and switching applications
- Power management and control circuits
- Motor control and driver circuits
- Automotive and industrial control systems
Q & A
- What is the MJD122T4 transistor?
The MJD122T4 is an NPN Darlington transistor manufactured by STMicroelectronics, known for its high gain performance and low collector-emitter saturation voltage.
- What is the collector-emitter voltage rating of the MJD122T4?
The collector-emitter voltage (VCEO) rating is 100 V.
- What is the maximum collector current for the MJD122T4?
The maximum collector current (IC) is 8 A, with a peak current (ICM) of 16 A.
- What is the thermal resistance junction-case for the MJD122T4?
The thermal resistance junction-case (Rthj-c) is 6.25 °C/W.
- What are the key features of the MJD122T4 transistor?
The key features include low collector-emitter saturation voltage, integrated antiparallel collector-emitter diode, high gain performance, and compliance with ECOPACK environmental standards.
- In what package is the MJD122T4 available?
The MJD122T4 is available in the DPAK package with tape and reel packaging option.
- What are the typical applications for the MJD122T4 transistor?
Typical applications include general purpose linear and switching, power management, motor control, and automotive and industrial control systems.
- What is the maximum operating junction temperature for the MJD122T4?
The maximum operating junction temperature (TJ) is 150 °C.
- What is the DC current gain range for the MJD122T4?
The DC current gain (hFE) ranges from 1000 to 12000.
- Is the MJD122T4 compliant with environmental standards?
