Overview
The MJD112RLG, produced by onsemi, is a 2.0 A, 100 V NPN Darlington Bipolar Power Transistor. This device is designed for general-purpose power and switching applications, such as output or driver stages in switching regulators, converters, and power amplifiers. It is part of the MJD112 and MJD117 series, which are complementary devices. The MJD112RLG is specifically packaged in a DPAK (TO-252) case, which is Pb-free and RoHS compliant, making it suitable for a wide range of applications including automotive and industrial uses.
Key Specifications
| Characteristic | Symbol | Max Unit |
|---|---|---|
| Collector-Emitter Voltage | VCEO | 100 Vdc |
| Collector-Base Voltage | VCB | 100 Vdc |
| Emitter-Base Voltage | VEB | 5 Vdc |
| Collector Current (Continuous) | IC | 2 Adc |
| Collector Current (Peak) | IC | 4 Adc |
| Base Current | IB | 50 mAdc |
| Total Power Dissipation @ TC = 25°C | PD | 20 W |
| Total Power Dissipation @ TA = 25°C | PD | 1.75 W |
| Operating and Storage Junction Temperature Range | TJ, Tstg | −65 to +150 °C |
| Thermal Resistance, Junction-to-Case | RθJC | 6.25 °C/W |
| Thermal Resistance, Junction-to-Ambient | RθJA | 71.4 °C/W |
| DC Current Gain (hFE) | hFE | 2,500 (Typ) @ IC = 2.0 Adc |
Key Features
- Lead Formed for Surface Mount Applications in Plastic Sleeves
- Straight Lead Version in Plastic Sleeves (“−1” Suffix)
- Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
- Surface Mount Replacements for TIP110-TIP117 Series
- Monolithic Construction With Built-in Base-Emitter Shunt Resistors
- High DC Current Gain (hFE = 2,500 Typ @ IC = 2.0 Adc)
- Complementary Pairs Simplifies Designs
- NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- Pb-Free and RoHS Compliant
Applications
- Output or driver stages in switching regulators
- Converters
- Power amplifiers
- Automotive applications requiring AEC-Q101 qualification
- General-purpose power and switching applications
Q & A
- What is the maximum collector-emitter voltage for the MJD112RLG?
The maximum collector-emitter voltage (VCEO) is 100 Vdc.
- What is the continuous collector current rating for the MJD112RLG?
The continuous collector current (IC) is 2 Adc.
- What is the thermal resistance from junction to case for the MJD112RLG?
The thermal resistance from junction to case (RθJC) is 6.25 °C/W.
- Is the MJD112RLG Pb-free and RoHS compliant?
- What are the typical applications for the MJD112RLG?
The MJD112RLG is typically used in output or driver stages in switching regulators, converters, and power amplifiers.
- What is the DC current gain (hFE) for the MJD112RLG?
The DC current gain (hFE) is typically 2,500 at IC = 2.0 Adc.
- Does the MJD112RLG have any automotive qualifications?
- What is the operating and storage junction temperature range for the MJD112RLG?
- What package types are available for the MJD112?
- What is the total power dissipation at TC = 25°C for the MJD112RLG?
