Overview
The MJD122G is a complementary Darlington power transistor produced by onsemi, designed for general-purpose amplifier and low-speed switching applications. This transistor is part of the MJD122 and MJD127 series, which include both NPN (MJD122G) and PNP (MJD127G) configurations. The device is packaged in a DPAK (Dual Power Amplifier Package) for surface mount applications, making it suitable for a variety of electronic systems requiring high current gain and reliability.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 100 | Vdc |
| Collector-Base Voltage | VCB | 100 | Vdc |
| Emitter-Base Voltage | VEB | 5 | Vdc |
| Collector Current Continuous | IC | 8 | A |
| Base Current | IB | 120 | mA |
| Total Power Dissipation @ TC = 25°C | PD | 20 | W |
| Thermal Resistance, Junction-to-Case | RJC | 6.25 | °C/W |
| Thermal Resistance, Junction-to-Ambient | RJA | 71.4 | °C/W |
| DC Current Gain (IC = 4 A, VCE = 4 V) | hFE | 1000 - 12000 | |
| Collector-Emitter Saturation Voltage (IC = 4 A, IB = 16 mA) | VCE(sat) | 2 | Vdc |
| Base-Emitter Saturation Voltage (IC = 8 A, IB = 80 mA) | VBE(sat) | 4.5 | Vdc |
Key Features
- Lead formed for surface mount applications in plastic sleeves.
- Surface mount replacements for 2N6040-2N6045 series, TIP120-TIP122 series, and TIP125-TIP127 series.
- Monolithic construction with built-in base-emitter shunt resistors.
- High DC current gain: hFE = 2500 (Typ) @ IC = 4.0 A.
- ESD ratings: Human Body Model > 8000 V, Machine Model > 400 V.
- NJV prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.
- Pb-free, halogen-free/BFR-free, and RoHS compliant.
Applications
The MJD122G transistor is suitable for a variety of applications, including:
- General-purpose amplifiers.
- Low-speed switching applications.
- Automotive systems (due to AEC-Q101 qualification).
- Industrial control systems.
- Power supplies and power management systems.
Q & A
- What is the maximum collector-emitter voltage for the MJD122G transistor?
The maximum collector-emitter voltage (VCEO) is 100 Vdc.
- What is the typical DC current gain of the MJD122G transistor?
The typical DC current gain (hFE) is 2500 at IC = 4.0 A.
- What are the thermal resistance values for the MJD122G transistor?
The thermal resistance from junction to case (RJC) is 6.25 °C/W, and from junction to ambient (RJA) is 71.4 °C/W.
- Is the MJD122G transistor RoHS compliant?
- What are the ESD ratings for the MJD122G transistor?
The ESD ratings are > 8000 V for the Human Body Model and > 400 V for the Machine Model.
- What is the maximum collector current for the MJD122G transistor?
The maximum collector current (IC) is 8 A continuous.
- What is the base-emitter saturation voltage for the MJD122G transistor?
The base-emitter saturation voltage (VBE(sat)) is 4.5 Vdc at IC = 8 A and IB = 80 mA.
- Can the MJD122G transistor be used in automotive applications?
- What is the operating junction temperature range for the MJD122G transistor?
The operating and storage junction temperature range is -65 to +150 °C.
- What package type is the MJD122G transistor available in?
The MJD122G transistor is available in a DPAK (Dual Power Amplifier Package) for surface mount applications.
