Overview
The NJVMJD117T4G is a PNP complementary Darlington power transistor produced by onsemi. This device is designed for general-purpose power and switching applications, such as output or driver stages in switching regulators, converters, and power amplifiers. It is part of the MJD117 series, which is electrically similar to the popular TIP31 and TIP32 series. The NJV prefix indicates that this transistor is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
Key Specifications
| Characteristic | Symbol | Min | Max | Unit |
|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | - | 100 | Vdc |
| Collector-Base Voltage | VCB | - | 100 | Vdc |
| Emitter-Base Voltage | VEB | - | 5 | Vdc |
| Collector Current (Continuous) | IC | - | 2 | Adc |
| Collector Current (Peak) | IC | - | 4 | Adc |
| Base Current | IB | - | 50 | mAdc |
| Total Power Dissipation @ TC = 25°C | PD | - | 20 | W |
| Total Power Dissipation @ TA = 25°C | PD | - | 1.75 | W |
| Operating and Storage Junction Temperature Range | TJ, Tstg | -65 | 150 | °C |
| Thermal Resistance, Junction-to-Case | RθJC | - | 62.5 | °C/W |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | 3 | Vdc |
| Base-Emitter Saturation Voltage | VBE(sat) | - | 4 | Vdc |
| Base-Emitter On Voltage | VBE(on) | - | 2.8 | Vdc |
| Current-Gain - Bandwidth Product | fT | - | 25 | MHz |
| Output Capacitance | Cob | - | 200 | pF |
Key Features
- Lead formed for surface mount applications in plastic sleeves (no suffix) and straight lead version in plastic sleeves (“−1” suffix).
- Electrically similar to popular TIP31 and TIP32 series.
- NJV prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.
- Pb-free and RoHS compliant.
- Designed for general-purpose power and switching applications such as output or driver stages in switching regulators, converters, and power amplifiers.
Applications
The NJVMJD117T4G is suitable for a variety of applications, including:
- Switching regulators and converters.
- Power amplifiers.
- Automotive systems requiring AEC-Q101 qualification.
- General-purpose power and switching stages.
Q & A
- What is the maximum collector-emitter voltage for the NJVMJD117T4G? The maximum collector-emitter voltage (VCEO) is 100 Vdc.
- What is the continuous collector current rating for this transistor? The continuous collector current (IC) is 2 Adc.
- Is the NJVMJD117T4G Pb-free and RoHS compliant? Yes, it is Pb-free and RoHS compliant.
- What are the operating and storage junction temperature ranges for this device? The operating and storage junction temperature range is from -65°C to +150°C.
- What is the thermal resistance, junction-to-case for the NJVMJD117T4G? The thermal resistance, junction-to-case (RθJC) is 62.5 °C/W.
- What is the base-emitter saturation voltage for this transistor? The base-emitter saturation voltage (VBE(sat)) is 4 Vdc.
- What is the current-gain - bandwidth product for the NJVMJD117T4G? The current-gain - bandwidth product (fT) is 25 MHz.
- What are some common applications for the NJVMJD117T4G? Common applications include switching regulators, converters, power amplifiers, and automotive systems.
- Is the NJVMJD117T4G AEC-Q101 qualified? Yes, it is AEC-Q101 qualified and PPAP capable.
- What package types are available for the NJVMJD117T4G? It is available in DPAK (Pb-free) packages with various shipping options including rail and tape & reel.
