Overview
The NJVMJD122T4G is a complementary Darlington power transistor produced by onsemi. This NPN transistor is designed for general-purpose amplifier and low-speed switching applications. It is part of the MJD122 series, which includes surface mount replacements for various older transistor series such as the 2N6040-2N6045 and TIP120-TIP122 series. The NJVMJD122T4G is packaged in a DPAK (Pb-Free) case, making it suitable for surface mount applications.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 100 | Vdc |
| Collector-Base Voltage | VCB | 100 | Vdc |
| Emitter-Base Voltage | VEB | 5 | Vdc |
| Collector Current Continuous | IC | 8 | Adc |
| Base Current | IB | 120 | mAdc |
| Total Power Dissipation @ TC = 25°C | PD | 20 | W |
| Thermal Resistance, Junction-to-Case | RJC | 6.25 | °C/W |
| Thermal Resistance, Junction-to-Ambient | RJA | 71.4 | °C/W |
| Operating and Storage Junction Temperature Range | TJ, Tstg | -65 to +150 | °C |
| DC Current Gain (hFE) @ IC = 4 Adc, VCE = 4 Vdc | hFE | 1000 - 12000 | |
| Collector-Emitter Saturation Voltage @ IC = 8 Adc, IB = 80 mAdc | VCE(sat) | 2 - 4 | Vdc |
Key Features
- Monolithic construction with built-in base-emitter shunt resistors.
- High DC current gain: hFE = 2500 (Typ) @ IC = 4.0 Adc.
- Lead formed for surface mount applications in plastic sleeves.
- ESD ratings: Human Body Model > 8000 V, Machine Model > 400 V.
- AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements.
- Pb-Free, Halogen Free/BFR Free, and RoHS compliant.
Applications
The NJVMJD122T4G is suitable for a variety of applications, including general-purpose amplifiers and low-speed switching circuits. It can be used in automotive systems due to its AEC-Q101 qualification and PPAP capability. Additionally, it can replace older transistor series in various industrial and consumer electronics.
Q & A
- What is the collector-emitter voltage rating of the NJVMJD122T4G? The collector-emitter voltage rating is 100 Vdc.
- What is the maximum collector current for the NJVMJD122T4G? The maximum collector current is 8 Adc.
- What is the thermal resistance from junction to case for the NJVMJD122T4G? The thermal resistance from junction to case is 6.25 °C/W.
- Is the NJVMJD122T4G RoHS compliant? Yes, the NJVMJD122T4G is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.
- What are the ESD ratings for the NJVMJD122T4G? The ESD ratings are Human Body Model > 8000 V and Machine Model > 400 V.
- What is the DC current gain of the NJVMJD122T4G at IC = 4 Adc, VCE = 4 Vdc? The DC current gain (hFE) is 1000 - 12000.
- Can the NJVMJD122T4G be used in automotive applications? Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
- What is the operating and storage junction temperature range for the NJVMJD122T4G? The operating and storage junction temperature range is -65 to +150 °C.
- What package type is the NJVMJD122T4G available in? The NJVMJD122T4G is available in a DPAK (Pb-Free) package.
- How many units are shipped per reel for the NJVMJD122T4G? The NJVMJD122T4G is shipped in reels of 2,500 units.
