Overview
The NDS0610 is a P-Channel Enhancement Mode Field Effect Transistor produced by ON Semiconductor using their proprietary, high cell density, DMOS technology. This technology is designed to minimize on-state resistance, provide rugged and reliable performance, and enable fast switching. The transistor is suitable for applications requiring up to 120 mA DC and can deliver current up to 1 A, making it particularly useful for low voltage applications that need a low current high side switch.
Key Specifications
| Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VDSS (Drain-Source Voltage) | - | - | -60 | V | |
| VGSS (Gate-Source Voltage) | - | - | ±20 | V | |
| ID (Drain Current - Continuous) | - | - | -0.12 | A | |
| ID (Drain Current - Pulsed) | - | - | -1 | A | |
| PD (Maximum Power Dissipation) | - | - | 0.36 | W | |
| TJ, TSTG (Operating and Storage Junction Temperature Range) | - | -55 to +150 | - | °C | |
| TL (Maximum Lead Temperature for Soldering Purposes) | - | - | 300 | °C | |
| RθJA (Thermal Resistance, Junction-to-Ambient) | - | - | 350 | °C/W | |
| RDS(ON) @ VGS = -10 V | - | - | 10 | Ω | |
| RDS(ON) @ VGS = -4.5 V | - | - | 20 | Ω |
Key Features
- Voltage controlled p-channel small signal switch
- High density cell design for low RDS(ON)
- High saturation current
- Low on-state resistance: RDS(ON) = 10 Ω @ VGS = -10 V, RDS(ON) = 20 Ω @ VGS = -4.5 V
- Rugged and reliable performance
- Fast switching capabilities
Applications
The NDS0610 is particularly suited for low voltage applications requiring a low current high side switch. It can be used in various applications such as:
- Low voltage power management
- High side switching in DC-DC converters
- Load switching in automotive and industrial systems
- General purpose switching in consumer electronics
Q & A
- What is the maximum drain-source voltage (VDSS) of the NDS0610?
The maximum drain-source voltage (VDSS) of the NDS0610 is -60 V.
- What is the maximum continuous drain current (ID) of the NDS0610?
The maximum continuous drain current (ID) of the NDS0610 is -0.12 A.
- What is the thermal resistance (RθJA) of the NDS0610?
The thermal resistance (RθJA) of the NDS0610 is 350 °C/W.
- What are the typical on-state resistances (RDS(ON)) of the NDS0610?
The typical on-state resistances are 10 Ω @ VGS = -10 V and 20 Ω @ VGS = -4.5 V.
- What is the operating and storage junction temperature range of the NDS0610?
The operating and storage junction temperature range of the NDS0610 is -55 to +150 °C.
- What is the maximum power dissipation (PD) of the NDS0610?
The maximum power dissipation (PD) of the NDS0610 is 0.36 W.
- What is the gate-source voltage range (VGSS) of the NDS0610?
The gate-source voltage range (VGSS) of the NDS0610 is ±20 V.
- What are some common applications of the NDS0610?
The NDS0610 is commonly used in low voltage power management, high side switching in DC-DC converters, load switching in automotive and industrial systems, and general purpose switching in consumer electronics.
- What technology is used to produce the NDS0610?
The NDS0610 is produced using ON Semiconductor’s proprietary, high cell density, DMOS technology.
- What is the package type of the NDS0610?
The NDS0610 is available in the SOT-23 package.
