NDF08N60ZH
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onsemi NDF08N60ZH

Manufacturer No:
NDF08N60ZH
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET N-CH 600V 8.4A TO220FP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NDF08N60ZH is a high-performance N-Channel Power MOSFET produced by onsemi. This device is designed to offer high efficiency and reliability in various power management applications. Although it has been discontinued by onsemi, it remains a significant component in existing designs and legacy systems. The MOSFET features a TO-220FP package, which is known for its thermal performance and ease of use in a wide range of applications.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 600 V
ID (Continuous Drain Current) 8.4 A
RDS(ON) (On-Resistance) 0.55 Ω
VGS(th) (Gate Threshold Voltage) 2.0 - 4.0 V
PD (Power Dissipation) 80 W
TJ (Junction Temperature) -55 to 150 °C
Package TO-220FP -

Key Features

  • High Voltage and Current Capability: The NDF08N60ZH can handle up to 600V drain-source voltage and 8.4A continuous drain current, making it suitable for high-power applications.
  • Low On-Resistance: With an on-resistance of 0.55Ω, this MOSFET minimizes power losses and enhances overall system efficiency.
  • High Junction Temperature: The device can operate over a wide temperature range from -55°C to 150°C, ensuring reliability in harsh environments.
  • TO-220FP Package: This package offers excellent thermal performance and is easy to use in various board designs.

Applications

  • Power Supplies: Suitable for use in switching power supplies, DC-DC converters, and AC-DC converters due to its high efficiency and reliability.
  • Motor Control: Can be used in motor drive applications, including brushless DC motors and stepper motors.
  • Industrial Automation: Applicable in various industrial automation systems requiring high-power switching.
  • Aerospace and Defense: Its robust performance makes it a candidate for use in aerospace and defense electronics.

Q & A

  1. What is the maximum drain-source voltage of the NDF08N60ZH MOSFET?

    The maximum drain-source voltage is 600V.

  2. What is the continuous drain current rating of the NDF08N60ZH?

    The continuous drain current rating is 8.4A.

  3. What is the on-resistance of the NDF08N60ZH?

    The on-resistance is 0.55Ω.

  4. What is the package type of the NDF08N60ZH?

    The package type is TO-220FP.

  5. What is the junction temperature range of the NDF08N60ZH?

    The junction temperature range is -55°C to 150°C.

  6. Is the NDF08N60ZH still in production?

    No, the NDF08N60ZH has been discontinued by onsemi.

  7. What are some common applications for the NDF08N60ZH?

    Common applications include power supplies, motor control, industrial automation, and aerospace and defense electronics.

  8. What are the key features of the NDF08N60ZH?

    Key features include high voltage and current capability, low on-resistance, high junction temperature, and a TO-220FP package.

  9. Where can I find detailed specifications for the NDF08N60ZH?

    Detailed specifications can be found in the datasheet available from sources like Mouser Electronics or the official onsemi website.

  10. Are there any recommended replacement devices for the NDF08N60ZH?

    Yes, onsemi may have suggested replacement devices listed in their product discontinuance notifications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:8.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:950mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:58 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1370 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):36W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-2 Full Pack
Package / Case:TO-220-3 Full Pack
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Same Series
NDF08N60ZG
NDF08N60ZG
MOSFET N-CH 600V 8.4A TO220FP

Similar Products

Part Number NDF08N60ZH NDF02N60ZH NDF03N60ZH NDF04N60ZH NDF06N60ZH NDF08N50ZH NDF08N60ZG
Manufacturer onsemi onsemi onsemi onsemi Sanyo onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V 500 V 600 V
Current - Continuous Drain (Id) @ 25°C 8.4A (Tc) 2.4A (Tc) 3.1A (Tc) 4.8A (Tc) 6A (Tj) 8.5A (Tc) 8.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V - 10V 10V
Rds On (Max) @ Id, Vgs 950mOhm @ 3.5A, 10V 4.8Ohm @ 1A, 10V 3.6Ohm @ 1.2A, 10V 2Ohm @ 2A, 10V 1.2Ohm @ 3A, 10V 850mOhm @ 3.6A, 10V 950mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 58 nC @ 10 V 16 nC @ 10 V 18 nC @ 10 V 29 nC @ 10 V 31 nC @ 10 V 46 nC @ 10 V 39 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1370 pF @ 25 V 325 pF @ 25 V 372 pF @ 25 V 640 pF @ 25 V 923 pF @ 25 V 1095 pF @ 25 V 1140 pF @ 25 V
FET Feature - - - - - - -
Power Dissipation (Max) 36W (Tc) 24W (Tc) 27W (Tc) 30W (Tc) 31W (Tc) 35W (Tc) 36W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220-2 Full Pack TO-220-2 Full Pack TO-220-2 Full Pack TO-220-2 Full Pack TO-220-3 Full Pack TO-220-2 Full Pack TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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