Overview
The NDD04N60Z-1G is an N-Channel Power MOSFET produced by onsemi, designed for high-performance applications requiring low on-resistance and high current handling. This device is part of the NDD04N60Z series and is packaged in the IPAK (TO-251) case. It is Pb-free, halogen-free, and RoHS compliant, making it suitable for a wide range of modern electronic systems.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 600 | V |
| Continuous Drain Current | ID | 4.1 A (at TJ = 25°C), 2.6 A (at TA = 100°C) | A |
| Pulsed Drain Current | IDM | 20 A | A |
| Power Dissipation | PD | 83 W | W |
| Gate-to-Source Voltage | VGS | ±30 V | V |
| Static Drain-to-Source On-Resistance | RDS(on) | 1.8 - 2.0 Ω (at VGS = 10 V, ID = 2.0 A) | Ω |
| Gate Threshold Voltage | VGS(th) | 3.0 - 4.5 V | V |
| Junction-to-Case Thermal Resistance | RθJC | 1.5 °C/W | °C/W |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 °C | °C |
Key Features
- Low ON Resistance: The NDD04N60Z-1G features a low on-resistance, which minimizes power losses and enhances efficiency in high-current applications.
- Low Gate Charge: This MOSFET has a low gate charge, which reduces the switching time and improves overall system performance.
- ESD Diode-Protected Gate: The device includes ESD protection for the gate, enhancing reliability and robustness against electrostatic discharge.
- 100% Avalanche Tested: The MOSFET is thoroughly tested for avalanche ruggedness, ensuring it can handle high-energy pulses.
- Pb-free, Halogen-free, and RoHS Compliant: The device is environmentally friendly and compliant with current regulatory standards.
Applications
The NDD04N60Z-1G is suitable for a variety of high-power applications, including:
- Power supplies and DC-DC converters
- Motor control and drive systems
- Switching and linear amplifiers
- High-frequency switching applications
- Automotive and industrial power management systems
Q & A
- What is the maximum drain-to-source voltage of the NDD04N60Z-1G?
The maximum drain-to-source voltage (VDSS) is 600 V.
- What is the continuous drain current rating at 25°C and 100°C?
The continuous drain current (ID) is 4.1 A at TJ = 25°C and 2.6 A at TA = 100°C.
- What is the typical on-resistance of the NDD04N60Z-1G?
The typical on-resistance (RDS(on)) is between 1.8 and 2.0 Ω at VGS = 10 V and ID = 2.0 A.
- Is the NDD04N60Z-1G ESD protected?
Yes, the gate of the NDD04N60Z-1G is ESD diode-protected.
- What is the junction-to-case thermal resistance of the NDD04N60Z-1G?
The junction-to-case thermal resistance (RθJC) is 1.5 °C/W.
- What are the operating and storage temperature ranges for the NDD04N60Z-1G?
The operating and storage temperature range is -55 to 150 °C.
- Is the NDD04N60Z-1G RoHS compliant?
Yes, the NDD04N60Z-1G is Pb-free, halogen-free, and RoHS compliant.
- What are some common applications for the NDD04N60Z-1G?
Common applications include power supplies, motor control systems, switching amplifiers, and automotive power management systems.
- What is the maximum gate-to-source voltage for the NDD04N60Z-1G?
The maximum gate-to-source voltage (VGS) is ±30 V.
- What is the pulsed drain current rating for the NDD04N60Z-1G?
The pulsed drain current (IDM) is 20 A.
