Overview
The NDD03N60Z-1G is an N-Channel Power MOSFET produced by ON Semiconductor. This device is designed for high-voltage applications, offering a drain to source voltage (Vds) of 600V. Although the part is currently listed as obsolete, it was widely used in various power management and switching applications due to its robust specifications and reliability.
Key Specifications
| Parameter | Value |
|---|---|
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vds) | 600 V |
| Continuous Drain Current (Id) | 3.3 A |
| Gate to Source Voltage (Vgs) | ±20 V |
| On-Resistance (Rds(on)) | Typically 270 mΩ at Vgs = 10 V, Id = 2.5 A |
| Package Type | IPAK (TO-251) |
| Status | Obsolete |
Key Features
- High Voltage Capability: The NDD03N60Z-1G can handle a drain to source voltage of up to 600V, making it suitable for high-voltage applications.
- Low On-Resistance: With a typical on-resistance of 270 mΩ at Vgs = 10 V and Id = 2.5 A, this MOSFET minimizes power losses during operation.
- High Current Handling: It can handle a continuous drain current of 3.3 A, which is adequate for many power management and switching circuits.
- Robust Gate Voltage Tolerance: The gate to source voltage can range from -20 V to +20 V, providing flexibility in gate drive design.
- Compact Packaging: The IPAK (TO-251) package is compact and suitable for a variety of board layouts.
Applications
- Power Supplies: Suitable for use in high-voltage power supplies, including switch-mode power supplies and DC-DC converters.
- Motor Control: Can be used in motor control circuits due to its high current and voltage handling capabilities.
- Switching Circuits: Ideal for high-frequency switching applications such as inverter circuits and power amplifiers.
- Automotive Systems: Applicable in automotive systems that require high reliability and robust performance under varying conditions.
Q & A
- What is the maximum drain to source voltage (Vds) of the NDD03N60Z-1G?
The maximum drain to source voltage (Vds) is 600 V.
- What is the continuous drain current (Id) rating of this MOSFET?
The continuous drain current (Id) rating is 3.3 A.
- What is the typical on-resistance (Rds(on)) of the NDD03N60Z-1G?
The typical on-resistance (Rds(on)) is 270 mΩ at Vgs = 10 V and Id = 2.5 A.
- What package type is the NDD03N60Z-1G available in?
The NDD03N60Z-1G is available in the IPAK (TO-251) package.
- Is the NDD03N60Z-1G still in production?
No, the NDD03N60Z-1G is listed as obsolete.
- What are some common applications for the NDD03N60Z-1G?
Common applications include power supplies, motor control, switching circuits, and automotive systems.
- What is the gate to source voltage (Vgs) range for this MOSFET?
The gate to source voltage (Vgs) range is ±20 V.
- How can I find replacement parts for the NDD03N60Z-1G?
ON Semiconductor provides a list of recommended replacement devices. Alternatively, you can contact Rochester Electronics for remaining inventory and mask sets.
- What are the key benefits of using the NDD03N60Z-1G in power management applications?
The key benefits include high voltage capability, low on-resistance, high current handling, and robust gate voltage tolerance.
- Where can I find detailed specifications for the NDD03N60Z-1G?
Detailed specifications can be found in the datasheet available on ON Semiconductor's official website or through distributors like Digi-Key and Mouser.
