NDBA180N10BT4H
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onsemi NDBA180N10BT4H

Manufacturer No:
NDBA180N10BT4H
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 180A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NDBA180N10BT4H is a power MOSFET produced by onsemi, although it is currently listed as obsolete and no longer manufactured. This component was designed for high-performance applications requiring efficient power handling.

Key Specifications

ParameterValue
StatusObsolete
Case Outline369C (DPAK-3)
MSL Type1
MSL Temp (°C)260
Container TypeREEL
Container Qty.2500
Channel PolarityN-Channel
ConfigurationSingle
V(BR)DSS Min (V)600
VGS Max (V)25
VGS(th) Max (V)4
ID Max (A)6.6
PD Max (W)84
RDS(on) Max @ VGS = 10 V (mΩ)180
Qg Typ @ VGS = 10 V (nC)15
Ciss Typ (pF)440

Key Features

  • Pb-Free, Halogen Free/BFR Free and RoHS Compliant
  • High current handling capability with a maximum drain current of 6.6 A
  • Low on-resistance (RDS(on)) of 180 mΩ at VGS = 10 V
  • High voltage rating with V(BR)DSS Min of 600 V
  • Suitable for high-power applications such as power supplies, lighting, and motor control systems

Applications

The NDBA180N10BT4H MOSFET is ideal for various high-power applications, including:

  • Power supply systems
  • Lighting systems
  • Motor control systems
  • Other high-current and high-voltage applications

Q & A

  1. Q: What is the status of the NDBA180N10BT4H MOSFET?
    A: The NDBA180N10BT4H is currently listed as obsolete and no longer manufactured.
  2. Q: What is the maximum drain current of the NDBA180N10BT4H?
    A: The maximum drain current (ID Max) is 6.6 A.
  3. Q: What is the maximum voltage rating of the NDBA180N10BT4H?
    A: The maximum voltage rating (V(BR)DSS Min) is 600 V.
  4. Q: What is the on-resistance (RDS(on)) of the NDBA180N10BT4H at VGS = 10 V?
    A: The on-resistance (RDS(on)) is 180 mΩ at VGS = 10 V.
  5. Q: Is the NDBA180N10BT4H RoHS compliant?
    A: Yes, the NDBA180N10BT4H is Pb-Free, Halogen Free/BFR Free and RoHS Compliant.
  6. Q: What are the typical applications of the NDBA180N10BT4H?
    A: Typical applications include power supply systems, lighting systems, motor control systems, and other high-current and high-voltage applications.
  7. Q: Where can I find detailed specifications and datasheets for the NDBA180N10BT4H?
    A: Detailed specifications and datasheets can be found on the official onsemi website or through distributors like Mouser and Digi-Key.
  8. Q: Are there any recommended substitutes for the NDBA180N10BT4H?
    A: Yes, recommended substitutes include the FDB035N10A from onsemi.
  9. Q: How do I handle the disposal of obsolete components like the NDBA180N10BT4H?
    A: Obsolete components should be disposed of according to local and international regulations regarding electronic waste.
  10. Q: Can I still purchase the NDBA180N10BT4H from any suppliers?
    A: Although the component is obsolete, some suppliers might still have stock or offer substitutes. It is best to check with authorized distributors.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:180A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V, 15V
Rds On (Max) @ Id, Vgs:2.8mOhm @ 50A, 15V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:95 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6950 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):200W (Tc)
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number NDBA180N10BT4H NDBA100N10BT4H
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 180A (Ta) 100A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V, 15V 10V, 15V
Rds On (Max) @ Id, Vgs 2.8mOhm @ 50A, 15V 6.9mOhm @ 50A, 15V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 95 nC @ 10 V 35 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6950 pF @ 50 V 2950 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 200W (Tc) 110W (Tc)
Operating Temperature 175°C (TJ) 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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