Overview
The MTD6N15T4GV is a power field effect transistor (FET) produced by onsemi. This N-channel enhancement-mode silicon gate FET is designed for high-speed, low-loss power switching applications. It features a DPAK surface mount package, making it suitable for a variety of power management and control systems. The device is known for its fast switching speeds, low on-resistance, and rugged design, which make it ideal for use in switching regulators, converters, solenoid and relay drivers, and other high-performance applications.
Key Specifications
| Characteristic | Symbol | Min | Max | Unit |
|---|---|---|---|---|
| Drain-Source Voltage | VDSS | - | 150 | Vdc |
| Drain-Gate Voltage | VDGR | - | 150 | Vdc |
| Gate-Source Voltage (Continuous) | VGS | - | ±20 | Vdc |
| Gate-Source Voltage (Non-Repetitive, tp ≤ 50 μs) | VGSM | - | ±40 | Vdc |
| Drain Current (Continuous) | ID | - | 6.0 | A |
| Drain Current (Pulsed) | IDM | - | 20 | A |
| Total Power Dissipation @ TC = 25°C | PD | - | 20 | W |
| Gate Threshold Voltage | VGS(th) | 2.0 | 4.0 | Vdc |
| Static Drain-Source On-Resistance | RDS(on) | - | 0.3 | Ω |
| Thermal Resistance - Junction-to-Case | RθJC | - | 6.25 | °C/W |
| Thermal Resistance - Junction-to-Ambient | RθJA | - | 100 | °C/W |
Key Features
- Silicon Gate for Fast Switching Speeds
- Low RDS(on) — 0.3 Ω Max
- Rugged — SOA is Power Dissipation Limited
- Source-to-Drain Diode Characterized for Use With Inductive Loads
- Low Drive Requirement — VGS(th) = 4.0 V Max
- Surface Mount Package on 16 mm Tape
- Pb-Free Package is Available
- Low Gate Charge and Capacitance to Minimize Driver Losses
Applications
- Switching Regulators
- Converters
- Solenoid and Relay Drivers
- High-Speed Power Switching Applications
- Power Management and Control Systems
Q & A
- What is the maximum drain-source voltage (VDSS) of the MTD6N15T4GV?
The maximum drain-source voltage (VDSS) is 150 Vdc.
- What is the maximum continuous drain current (ID) of the MTD6N15T4GV?
The maximum continuous drain current (ID) is 6.0 A.
- What is the typical on-resistance (RDS(on)) of the MTD6N15T4GV?
The typical on-resistance (RDS(on)) is 0.3 Ω.
- What is the gate threshold voltage (VGS(th)) range of the MTD6N15T4GV?
The gate threshold voltage (VGS(th)) range is from 2.0 V to 4.0 V.
- Is the MTD6N15T4GV Pb-free and RoHS compliant?
- What are the typical applications of the MTD6N15T4GV?
The MTD6N15T4GV is typically used in switching regulators, converters, solenoid and relay drivers, and other high-speed power switching applications.
- What is the thermal resistance - junction-to-case (RθJC) of the MTD6N15T4GV?
The thermal resistance - junction-to-case (RθJC) is 6.25 °C/W.
- What is the thermal resistance - junction-to-ambient (RθJA) of the MTD6N15T4GV?
The thermal resistance - junction-to-ambient (RθJA) is 100 °C/W.
- Does the MTD6N15T4GV have a built-in source-to-drain diode?
- What is the package type of the MTD6N15T4GV?
The MTD6N15T4GV comes in a DPAK surface mount package.
