Overview
The MTD3302T4 is a high-performance N-Channel Power MOSFET produced by onsemi. This device is part of an advanced series of power MOSFETs that utilize the latest MOSFET technology to achieve the lowest possible on-resistance per silicon area. The MTD3302T4 is designed for use in low voltage, high speed switching applications where power efficiency is crucial.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 30 | Vdc |
| Drain-to-Gate Voltage | VDGR | 30 | Vdc |
| Gate-to-Source Voltage | VGS | ±20 | Vdc |
| Gate-to-Source Operating Voltage | VGS | ±16 | Vdc |
| Operating and Storage Temperature Range | TJ, Tstg | -55 to 150 | °C |
| Single Pulse Drain-to-Source Avalanche Energy | EAS | 1000 | mJ |
| Continuous Drain Current @ TA = 25°C | ID | 11.2 | Adc |
| Continuous Drain Current @ TA = 100°C | ID | 8.6 | Adc |
| Static Drain-to-Source On-Resistance (VGS = 10 Vdc, ID = 10 Adc) | RDS(on) | 10 | mΩ |
| Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) | VGS(th) | 1.0 - 1.9 | Vdc |
Key Features
- Ultralow RDS(on) of 10 mΩ, providing higher efficiency and extending battery life in portable applications.
- Logic level gate drive, allowing it to be driven by logic ICs.
- Diode characterized for use in bridge circuits with high speed and soft recovery.
- Avalanche energy specified to eliminate guesswork in designs with inductive loads and offer additional safety margin against unexpected voltage transients.
- IDSS specified at elevated temperature for reliability.
- Capable of withstanding high energy in avalanche and commutation modes.
Applications
- DC-DC converters and power management in portable and battery-powered products such as computers, printers, cellular and cordless phones.
- Low voltage motor controls in mass storage products like disk drives and tape drives.
Q & A
- What is the maximum drain-to-source voltage of the MTD3302T4?
The maximum drain-to-source voltage (VDSS) is 30 Vdc.
- What is the typical on-resistance of the MTD3302T4?
The static drain-to-source on-resistance (RDS(on)) is typically 10 mΩ at VGS = 10 Vdc and ID = 10 Adc.
- Can the MTD3302T4 be driven by logic ICs?
- What are the typical applications of the MTD3302T4?
The MTD3302T4 is typically used in DC-DC converters, power management in portable and battery-powered products, and low voltage motor controls in mass storage products.
- What is the maximum single pulse drain-to-source avalanche energy of the MTD3302T4?
The maximum single pulse drain-to-source avalanche energy (EAS) is 1000 mJ.
- What is the operating temperature range of the MTD3302T4?
The operating and storage temperature range is -55 to 150 °C.
- What is the gate threshold voltage of the MTD3302T4?
The gate threshold voltage (VGS(th)) is between 1.0 and 1.9 Vdc.
- How does the MTD3302T4 handle inductive loads?
The MTD3302T4 has specified avalanche energy to handle inductive loads safely and provide an additional safety margin against unexpected voltage transients.
- What is the continuous drain current of the MTD3302T4 at 25°C?
The continuous drain current (ID) at TA = 25°C is 11.2 Adc.
- Is the MTD3302T4 suitable for high-speed switching applications?
