MMFT960T1G
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onsemi MMFT960T1G

Manufacturer No:
MMFT960T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 300MA SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMFT960T1G is a high-performance N-Channel power MOSFET produced by onsemi. This component is designed for high-speed, low-loss power switching applications, making it suitable for a variety of electronic systems. The MOSFET features a robust design and advanced technology to ensure reliable and efficient operation.

Key Specifications

ParameterValue
Channel TypeN Channel
Drain-Source Voltage (Vds)60 V
Continuous Drain Current (Id) at 25°C300 mA
Package TypeSOT-223
Gate Threshold Voltage (Vgs(th))1.5 V to 3.5 V
On-Resistance (Rds(on))Typically 1.2 Ω at Vgs = 10 V, Id = 200 mA

Key Features

  • High-speed switching capability, making it ideal for applications requiring fast switching times.
  • Low on-resistance (Rds(on)) for reduced power losses.
  • Robust SOT-223 package for reliable thermal performance and ease of mounting.
  • Standard 40V gate level, suitable for a wide range of power switching applications.

Applications

  • Switching regulators and DC-DC converters.
  • Solenoid and relay drivers.
  • Motor driver applications.
  • General-purpose power switching in electronic devices.

Q & A

  1. What is the drain-source voltage rating of the MMFT960T1G?
    The drain-source voltage rating is 60 V.
  2. What is the continuous drain current of the MMFT960T1G at 25°C?
    The continuous drain current is 300 mA.
  3. What package type does the MMFT960T1G use?
    The package type is SOT-223.
  4. What is the typical on-resistance of the MMFT960T1G?
    The typical on-resistance is 1.2 Ω at Vgs = 10 V, Id = 200 mA.
  5. What are some common applications for the MMFT960T1G?
    Common applications include switching regulators, DC-DC converters, solenoid and relay drivers, and motor driver applications.
  6. What is the gate threshold voltage range of the MMFT960T1G?
    The gate threshold voltage range is 1.5 V to 3.5 V.
  7. Why is the MMFT960T1G suitable for high-speed switching applications?
    It is suitable due to its low on-resistance and high-speed switching capability.
  8. Can the MMFT960T1G be used in general-purpose power switching applications?
    Yes, it can be used in general-purpose power switching applications.
  9. What is the significance of the 40V gate level in the MMFT960T1G?
    The 40V gate level makes it suitable for a wide range of power switching applications.
  10. Where can I find detailed specifications for the MMFT960T1G?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser Electronics.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:300mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.7Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:3.2 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:65 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):800mW (Ta)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223 (TO-261)
Package / Case:TO-261-4, TO-261AA
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