Overview
The FQPF27P06 is a P-Channel enhancement mode power MOSFET produced by onsemi, utilizing their proprietary planar stripe and DMOS technology. This advanced technology is designed to reduce on-state resistance, provide superior switching performance, and offer high avalanche energy strength. The device is suitable for a variety of applications, including switched mode power supplies, audio amplifiers, DC motor control, and variable switching power applications.
Key Specifications
| Parameter | Unit | Min | Typ | Max |
|---|---|---|---|---|
| Drain-Source Voltage (VDSS) | V | -60 | - | - |
| Drain Current (ID) - Continuous (TC = 25°C) | A | -17 | - | - |
| Drain Current (ID) - Continuous (TC = 100°C) | A | -12 | - | - |
| Drain Current (IDM) - Pulsed | A | -68 | - | - |
| Gate-Source Voltage (VGSS) | V | -25 | - | 25 |
| Single Pulsed Avalanche Energy (EAS) | mJ | - | - | 560 |
| Power Dissipation (PD) at TC = 25°C | W | - | - | 47 |
| Thermal Resistance, Junction-to-Case (RθJC) | °C/W | - | - | 3.19 |
| Thermal Resistance, Junction-to-Ambient (RθJA) | °C/W | - | - | 62.5 |
| On-Resistance (RDS(on)) at VGS = -10 V, ID = -8.5 A | mΩ | - | 0.055 | 0.07 |
| Gate Threshold Voltage (VGS(th)) | V | -2.0 | - | -4.0 |
| Total Gate Charge (Qg) | nC | - | 33 | 43 |
Key Features
- High current capability: -17 A continuous drain current at TC = 25°C.
- Low on-state resistance: RDS(on) = 70 mΩ (Max.) at VGS = -10 V, ID = -8.5 A.
- Low gate charge: Typical 33 nC.
- Low Crss: Typical 120 pF.
- 100% Avalanche tested.
- High maximum junction temperature rating: 175°C.
- Superior switching performance and high avalanche energy strength.
Applications
- Switched mode power supplies.
- Audio amplifiers.
- DC motor control.
- Variable switching power applications.
Q & A
- What is the maximum drain-source voltage (VDSS) of the FQPF27P06 MOSFET?
The maximum drain-source voltage (VDSS) is -60 V.
- What is the continuous drain current (ID) at TC = 25°C?
The continuous drain current (ID) at TC = 25°C is -17 A.
- What is the maximum on-state resistance (RDS(on)) at VGS = -10 V, ID = -8.5 A?
The maximum on-state resistance (RDS(on)) at VGS = -10 V, ID = -8.5 A is 70 mΩ.
- What is the typical total gate charge (Qg)?
The typical total gate charge (Qg) is 33 nC.
- What are the typical applications of the FQPF27P06 MOSFET?
The typical applications include switched mode power supplies, audio amplifiers, DC motor control, and variable switching power applications.
- What is the maximum junction temperature rating of the FQPF27P06?
The maximum junction temperature rating is 175°C.
- What is the thermal resistance, junction-to-case (RθJC) of the FQPF27P06?
The thermal resistance, junction-to-case (RθJC) is 3.19 °C/W.
- What is the gate threshold voltage (VGS(th)) range?
The gate threshold voltage (VGS(th)) range is from -2.0 V to -4.0 V.
- What is the maximum power dissipation (PD) at TC = 25°C?
The maximum power dissipation (PD) at TC = 25°C is 47 W.
- Is the FQPF27P06 100% avalanche tested?
