Overview
The FQD8P10TM-F085 is a P-Channel enhancement mode power field effect transistor (MOSFET) produced by onsemi using their proprietary planar stripe, DMOS technology. This advanced technology is designed to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in avalanche and commutation modes. The device is well-suited for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Drain-Source Voltage (VDSS) | -100 | V |
Continuous Drain Current (ID) at TC = 25°C | -6.6 | A |
Pulsed Drain Current (IDM) | -26.4 | A |
Gate-Source Voltage (VGSS) | ±30 | V |
Static Drain-Source On-Resistance (RDS(on)) at VGS = -10 V, ID = -3.3 A | 0.53 Ω | Ω |
Gate Threshold Voltage (VGS(th)) | -2.0 to -4.0 | V |
Power Dissipation (PD) at TA = 25°C | 2.5 W | W |
Operating and Storage Temperature Range (TJ, TSTG) | -55 to +150 | °C |
Thermal Resistance, Junction to Case (RθJC) | 2.84 °C/W | °C/W |
Key Features
- Low on-state resistance (RDS(on) = 0.53 Ω at VGS = -10 V)
- Low gate charge (Typ. 12 nC)
- Low Crss (Typ. 30 pF)
- Fast switching capabilities
- 100% avalanche tested
- Improved dv/dt capability
- Qualified to AEC-Q101
- RoHS compliant
Applications
The FQD8P10TM-F085 is suitable for various low voltage applications, including:
- Audio amplifiers
- High efficiency switching DC/DC converters
- DC motor control
Q & A
- What is the maximum drain-source voltage (VDSS) of the FQD8P10TM-F085?
The maximum drain-source voltage (VDSS) is -100 V. - What is the continuous drain current (ID) at 25°C?
The continuous drain current (ID) at 25°C is -6.6 A. - What is the typical gate charge (Qg) of the device?
The typical gate charge (Qg) is 12 nC. - Is the FQD8P10TM-F085 RoHS compliant?
Yes, the FQD8P10TM-F085 is RoHS compliant. - What are the operating and storage temperature ranges for this MOSFET?
The operating and storage temperature ranges are -55 to +150°C. - What is the thermal resistance from junction to case (RθJC) for this device?
The thermal resistance from junction to case (RθJC) is 2.84 °C/W. - What are some typical applications for the FQD8P10TM-F085?
Typical applications include audio amplifiers, high efficiency switching DC/DC converters, and DC motor control. - Is the FQD8P10TM-F085 qualified to any automotive standards?
Yes, it is qualified to AEC-Q101. - What is the maximum power dissipation (PD) at 25°C?
The maximum power dissipation (PD) at 25°C is 2.5 W. - What is the package type for the FQD8P10TM-F085?
The package type is DPAK3.