FQD8P10TM-F085
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onsemi FQD8P10TM-F085

Manufacturer No:
FQD8P10TM-F085
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 100V 6.6A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FQD8P10TM-F085 is a P-Channel enhancement mode power field effect transistor (MOSFET) produced by onsemi using their proprietary planar stripe, DMOS technology. This advanced technology is designed to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in avalanche and commutation modes. The device is well-suited for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDSS)-100V
Continuous Drain Current (ID) at TC = 25°C-6.6A
Pulsed Drain Current (IDM)-26.4A
Gate-Source Voltage (VGSS)±30V
Static Drain-Source On-Resistance (RDS(on)) at VGS = -10 V, ID = -3.3 A0.53 ΩΩ
Gate Threshold Voltage (VGS(th))-2.0 to -4.0V
Power Dissipation (PD) at TA = 25°C2.5 WW
Operating and Storage Temperature Range (TJ, TSTG)-55 to +150°C
Thermal Resistance, Junction to Case (RθJC)2.84 °C/W°C/W

Key Features

  • Low on-state resistance (RDS(on) = 0.53 Ω at VGS = -10 V)
  • Low gate charge (Typ. 12 nC)
  • Low Crss (Typ. 30 pF)
  • Fast switching capabilities
  • 100% avalanche tested
  • Improved dv/dt capability
  • Qualified to AEC-Q101
  • RoHS compliant

Applications

The FQD8P10TM-F085 is suitable for various low voltage applications, including:

  • Audio amplifiers
  • High efficiency switching DC/DC converters
  • DC motor control

Q & A

  1. What is the maximum drain-source voltage (VDSS) of the FQD8P10TM-F085?
    The maximum drain-source voltage (VDSS) is -100 V.
  2. What is the continuous drain current (ID) at 25°C?
    The continuous drain current (ID) at 25°C is -6.6 A.
  3. What is the typical gate charge (Qg) of the device?
    The typical gate charge (Qg) is 12 nC.
  4. Is the FQD8P10TM-F085 RoHS compliant?
    Yes, the FQD8P10TM-F085 is RoHS compliant.
  5. What are the operating and storage temperature ranges for this MOSFET?
    The operating and storage temperature ranges are -55 to +150°C.
  6. What is the thermal resistance from junction to case (RθJC) for this device?
    The thermal resistance from junction to case (RθJC) is 2.84 °C/W.
  7. What are some typical applications for the FQD8P10TM-F085?
    Typical applications include audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.
  8. Is the FQD8P10TM-F085 qualified to any automotive standards?
    Yes, it is qualified to AEC-Q101.
  9. What is the maximum power dissipation (PD) at 25°C?
    The maximum power dissipation (PD) at 25°C is 2.5 W.
  10. What is the package type for the FQD8P10TM-F085?
    The package type is DPAK3.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:6.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:530mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:470 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 44W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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