Overview
The FQB6N80TM is an N-Channel Power MOSFET produced by onsemi, designed for high-performance applications. This device is part of the QFET® series, known for its robust and reliable operation. The FQB6N80TM features a drain-source breakdown voltage of 800 V and a continuous drain current of 5.8 A, making it suitable for a variety of power management and switching applications.
Key Specifications
| Parameter | Value |
|---|---|
| Drain-Source Breakdown Voltage (Vds) | 800 V |
| Continuous Drain Current (Id) | 5.8 A |
| Drain-Source Resistance (Rds On) | 1.95 Ω |
| Package Type | Surface Mount TO-263 (D2PAK) |
| Power Dissipation (Ta) | 3.13 W |
| Power Dissipation (Tc) | 158 W |
Key Features
- High drain-source breakdown voltage of 800 V for robust operation in high-voltage applications.
- Continuous drain current of 5.8 A, suitable for high-current applications.
- Low drain-source resistance (Rds On) of 1.95 Ω, reducing power losses and improving efficiency.
- Surface Mount TO-263 (D2PAK) package for easy integration into modern PCB designs.
- High power dissipation capabilities, with 3.13 W at ambient temperature and 158 W at case temperature.
Applications
The FQB6N80TM is versatile and can be used in various applications, including:
- Power supplies and DC-DC converters.
- Motor control and drive systems.
- Switching and power management circuits.
- Automotive and industrial electronics.
- High-voltage and high-current switching applications.
Q & A
- What is the drain-source breakdown voltage of the FQB6N80TM?
The drain-source breakdown voltage is 800 V. - What is the continuous drain current of the FQB6N80TM?
The continuous drain current is 5.8 A. - What is the drain-source resistance (Rds On) of the FQB6N80TM?
The drain-source resistance is 1.95 Ω. - What package type does the FQB6N80TM use?
The FQB6N80TM uses a Surface Mount TO-263 (D2PAK) package. - What are the power dissipation capabilities of the FQB6N80TM?
The power dissipation is 3.13 W at ambient temperature and 158 W at case temperature. - What are some common applications for the FQB6N80TM?
Common applications include power supplies, motor control systems, switching circuits, automotive electronics, and high-voltage switching applications. - Is the FQB6N80TM suitable for high-current applications?
Yes, it is suitable for high-current applications due to its continuous drain current of 5.8 A. - What is the QFET® series known for?
The QFET® series is known for its robust and reliable operation. - Where can I find detailed specifications for the FQB6N80TM?
Detailed specifications can be found on the datasheets available from distributors like Mouser, Digi-Key, and onsemi's official website. - Is the FQB6N80TM available for immediate shipment?
Yes, it is available for immediate shipment from various distributors.
