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FQB6N80TM
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onsemi FQB6N80TM

Manufacturer No:
FQB6N80TM
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 800V 5.8A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FQB6N80TM is an N-Channel Power MOSFET produced by onsemi, designed for high-performance applications. This device is part of the QFET® series, known for its robust and reliable operation. The FQB6N80TM features a drain-source breakdown voltage of 800 V and a continuous drain current of 5.8 A, making it suitable for a variety of power management and switching applications.

Key Specifications

ParameterValue
Drain-Source Breakdown Voltage (Vds)800 V
Continuous Drain Current (Id)5.8 A
Drain-Source Resistance (Rds On)1.95 Ω
Package TypeSurface Mount TO-263 (D2PAK)
Power Dissipation (Ta)3.13 W
Power Dissipation (Tc)158 W

Key Features

  • High drain-source breakdown voltage of 800 V for robust operation in high-voltage applications.
  • Continuous drain current of 5.8 A, suitable for high-current applications.
  • Low drain-source resistance (Rds On) of 1.95 Ω, reducing power losses and improving efficiency.
  • Surface Mount TO-263 (D2PAK) package for easy integration into modern PCB designs.
  • High power dissipation capabilities, with 3.13 W at ambient temperature and 158 W at case temperature.

Applications

The FQB6N80TM is versatile and can be used in various applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Switching and power management circuits.
  • Automotive and industrial electronics.
  • High-voltage and high-current switching applications.

Q & A

  1. What is the drain-source breakdown voltage of the FQB6N80TM?
    The drain-source breakdown voltage is 800 V.
  2. What is the continuous drain current of the FQB6N80TM?
    The continuous drain current is 5.8 A.
  3. What is the drain-source resistance (Rds On) of the FQB6N80TM?
    The drain-source resistance is 1.95 Ω.
  4. What package type does the FQB6N80TM use?
    The FQB6N80TM uses a Surface Mount TO-263 (D2PAK) package.
  5. What are the power dissipation capabilities of the FQB6N80TM?
    The power dissipation is 3.13 W at ambient temperature and 158 W at case temperature.
  6. What are some common applications for the FQB6N80TM?
    Common applications include power supplies, motor control systems, switching circuits, automotive electronics, and high-voltage switching applications.
  7. Is the FQB6N80TM suitable for high-current applications?
    Yes, it is suitable for high-current applications due to its continuous drain current of 5.8 A.
  8. What is the QFET® series known for?
    The QFET® series is known for its robust and reliable operation.
  9. Where can I find detailed specifications for the FQB6N80TM?
    Detailed specifications can be found on the datasheets available from distributors like Mouser, Digi-Key, and onsemi's official website.
  10. Is the FQB6N80TM available for immediate shipment?
    Yes, it is available for immediate shipment from various distributors.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:5.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.95Ohm @ 2.9A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:31 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1500 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.13W (Ta), 158W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Manufacturer onsemi Fairchild Semiconductor Fairchild Semiconductor onsemi onsemi onsemi onsemi Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor
Product Status Obsolete Active Active Obsolete Obsolete Active Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 900 V 800 V 800 V 800 V 800 V 800 V 500 V 600 V 700 V
Current - Continuous Drain (Id) @ 25°C 5.8A (Tc) 5.8A (Tc) 6.6A (Tc) 2.4A (Tc) 3A (Tc) 3.9A (Tc) 4.8A (Tc) 5.5A (Tc) 6.2A (Tc) 6.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.95Ohm @ 2.9A, 10V 1.9Ohm @ 2.9A, 10V 1.5Ohm @ 3.3A, 10V 6.3Ohm @ 900mA, 10V 5Ohm @ 1.5A, 10V 3.6Ohm @ 1.95A, 10V 2.6Ohm @ 2.4A, 10V 1.3Ohm @ 2.8A, 10V 1.5Ohm @ 3.1A, 10V 1.5Ohm @ 3.1A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V 52 nC @ 10 V 52 nC @ 10 V 15 nC @ 10 V 19 nC @ 10 V 25 nC @ 10 V 33 nC @ 10 V 22 nC @ 10 V 25 nC @ 10 V 40 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 25 V 1880 pF @ 25 V 1850 pF @ 25 V 550 pF @ 25 V 690 pF @ 25 V 880 pF @ 25 V 1250 pF @ 25 V 790 pF @ 25 V 1000 pF @ 25 V 1400 pF @ 25 V
FET Feature - - - - - - - - - -
Power Dissipation (Max) 3.13W (Ta), 158W (Tc) 3.13W (Ta), 167W (Tc) 3.13W (Ta), 167W (Tc) 3.13W (Ta), 85W (Tc) - 3.13W (Ta), 130W (Tc) 3.13W (Ta), 140W (Tc) 3.13W (Ta), 130W (Tc) 3.13W (Ta), 130W (Tc) 3.13W (Ta), 142W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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