FQB34P10TM
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onsemi FQB34P10TM

Manufacturer No:
FQB34P10TM
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 100V 33.5A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FQB34P10TM-F085 is a 100V P-Channel enhancement mode power field effect transistor produced by onsemi. This device utilizes onsemi’s proprietary, planar stripe, DMOS technology, which is designed to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in avalanche and commutation modes. It is well-suited for various low voltage applications, including audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.

Key Specifications

Parameter Typical Maximum Units
Drain-Source Voltage (VDSS) - -100 V
Drain Current (ID) - Continuous (TC = 25°C) -33.5 -33.5 A
Drain Current (ID) - Continuous (TC = 100°C) -23.5 -23.5 A
Drain Current (IDM) - Pulsed -134 -134 A
Gate-Source Voltage (VGSS) ±25 ±25 V
On-State Resistance (RDS(on)) @ VGS = -10 V 0.06 0.06 Ω
Gate Charge (Qg) 85 nC 110 nC nC
Power Dissipation (PD) @ TA = 25°C 3.75 3.75 W
Maximum Junction Temperature (TJ) 175 175 °C
Thermal Resistance, Junction-to-Case (RθJC) 0.97 0.97 °C/W

Key Features

  • Low on-state resistance (RDS(on) = 0.06 Ω @ VGS = -10 V)
  • Low gate charge (typical 85 nC)
  • Low Crss (typical 170 pF)
  • Fast switching performance
  • 100% avalanche tested
  • Improved dv/dt capability
  • Maximum junction temperature rating of 175°C
  • Qualified to AEC Q101 and RoHS compliant

Applications

The FQB34P10TM-F085 is suitable for a variety of low voltage applications, including:

  • Audio amplifiers
  • High efficiency switching DC/DC converters
  • DC motor control
  • Automotive industry applications

Q & A

  1. What is the drain-source voltage rating of the FQB34P10TM-F085? The drain-source voltage rating is -100V.
  2. What is the maximum continuous drain current at 25°C? The maximum continuous drain current at 25°C is -33.5A.
  3. What is the on-state resistance of the FQB34P10TM-F085? The on-state resistance is 0.06 Ω @ VGS = -10 V.
  4. What is the typical gate charge of this MOSFET? The typical gate charge is 85 nC.
  5. Is the FQB34P10TM-F085 qualified to any automotive standards? Yes, it is qualified to AEC Q101.
  6. What is the maximum junction temperature of the FQB34P10TM-F085? The maximum junction temperature is 175°C.
  7. What are some common applications for the FQB34P10TM-F085? Common applications include audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.
  8. Is the FQB34P10TM-F085 RoHS compliant? Yes, it is RoHS compliant.
  9. What is the thermal resistance, junction-to-case (RθJC) of the FQB34P10TM-F085? The thermal resistance, junction-to-case is 0.97 °C/W.
  10. What is the package type of the FQB34P10TM-F085? The package type is D2PAK (TO-263-3).

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:33.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:60mOhm @ 16.75A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:110 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2910 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.75W (Ta), 155W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Same Series
FQI34P10TU
FQI34P10TU
MOSFET P-CH 100V 33.5A I2PAK

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