FQB34P10TM
  • Share:

onsemi FQB34P10TM

Manufacturer No:
FQB34P10TM
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 100V 33.5A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FQB34P10TM-F085 is a 100V P-Channel enhancement mode power field effect transistor produced by onsemi. This device utilizes onsemi’s proprietary, planar stripe, DMOS technology, which is designed to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in avalanche and commutation modes. It is well-suited for various low voltage applications, including audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.

Key Specifications

Parameter Typical Maximum Units
Drain-Source Voltage (VDSS) - -100 V
Drain Current (ID) - Continuous (TC = 25°C) -33.5 -33.5 A
Drain Current (ID) - Continuous (TC = 100°C) -23.5 -23.5 A
Drain Current (IDM) - Pulsed -134 -134 A
Gate-Source Voltage (VGSS) ±25 ±25 V
On-State Resistance (RDS(on)) @ VGS = -10 V 0.06 0.06 Ω
Gate Charge (Qg) 85 nC 110 nC nC
Power Dissipation (PD) @ TA = 25°C 3.75 3.75 W
Maximum Junction Temperature (TJ) 175 175 °C
Thermal Resistance, Junction-to-Case (RθJC) 0.97 0.97 °C/W

Key Features

  • Low on-state resistance (RDS(on) = 0.06 Ω @ VGS = -10 V)
  • Low gate charge (typical 85 nC)
  • Low Crss (typical 170 pF)
  • Fast switching performance
  • 100% avalanche tested
  • Improved dv/dt capability
  • Maximum junction temperature rating of 175°C
  • Qualified to AEC Q101 and RoHS compliant

Applications

The FQB34P10TM-F085 is suitable for a variety of low voltage applications, including:

  • Audio amplifiers
  • High efficiency switching DC/DC converters
  • DC motor control
  • Automotive industry applications

Q & A

  1. What is the drain-source voltage rating of the FQB34P10TM-F085? The drain-source voltage rating is -100V.
  2. What is the maximum continuous drain current at 25°C? The maximum continuous drain current at 25°C is -33.5A.
  3. What is the on-state resistance of the FQB34P10TM-F085? The on-state resistance is 0.06 Ω @ VGS = -10 V.
  4. What is the typical gate charge of this MOSFET? The typical gate charge is 85 nC.
  5. Is the FQB34P10TM-F085 qualified to any automotive standards? Yes, it is qualified to AEC Q101.
  6. What is the maximum junction temperature of the FQB34P10TM-F085? The maximum junction temperature is 175°C.
  7. What are some common applications for the FQB34P10TM-F085? Common applications include audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.
  8. Is the FQB34P10TM-F085 RoHS compliant? Yes, it is RoHS compliant.
  9. What is the thermal resistance, junction-to-case (RθJC) of the FQB34P10TM-F085? The thermal resistance, junction-to-case is 0.97 °C/W.
  10. What is the package type of the FQB34P10TM-F085? The package type is D2PAK (TO-263-3).

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:33.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:60mOhm @ 16.75A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:110 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2910 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.75W (Ta), 155W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$3.12
9

Please send RFQ , we will respond immediately.

Same Series
FQI34P10TU
FQI34P10TU
MOSFET P-CH 100V 33.5A I2PAK

Related Product By Categories

IRFB3607PBF
IRFB3607PBF
Infineon Technologies
MOSFET N-CH 75V 80A TO220AB
PHT6NQ10T,135
PHT6NQ10T,135
Nexperia USA Inc.
MOSFET N-CH 100V 3A SOT223
2N7002-TP
2N7002-TP
Micro Commercial Co
MOSFET N-CH 60V 115MA SOT23
NTD2955T4G
NTD2955T4G
onsemi
MOSFET P-CH 60V 12A DPAK
FQD19N10LTM
FQD19N10LTM
onsemi
MOSFET N-CH 100V 15.6A DPAK
FDD86567-F085
FDD86567-F085
onsemi
MOSFET N-CH 60V 100A DPAK
STH275N8F7-2AG
STH275N8F7-2AG
STMicroelectronics
MOSFET N-CH 80V 180A H2PAK-2
FDS4465
FDS4465
onsemi
MOSFET P-CH 20V 13.5A 8SOIC
NTMFS4C03NT1G
NTMFS4C03NT1G
onsemi
MOSFET N-CH 30V 30A/136A 5DFN
STF13N65M2
STF13N65M2
STMicroelectronics
MOSFET N-CH 650V 10A TO220FP
STB33N60M2
STB33N60M2
STMicroelectronics
MOSFET N-CH 600V 26A D2PAK
NVD5490NLT4G
NVD5490NLT4G
onsemi
MOSFET N-CH 60V 5A/17A DPAK-3

Related Product By Brand

1N5366BRL
1N5366BRL
onsemi
DIODE ZENER 39V 5W AXIAL
NTD3055L104
NTD3055L104
onsemi
MOSFET N-CH 60V 12A DPAK
NVMFS5C410NLWFT3G
NVMFS5C410NLWFT3G
onsemi
MOSFET N-CH 40V 48A/315A 5DFN
MC74AC273DTR2G
MC74AC273DTR2G
onsemi
IC FF D-TYPE SNGL 8BIT 20TSSOP
CAT24C02YI-GT3JN
CAT24C02YI-GT3JN
onsemi
IC EEPROM 2KBIT I2C 8TSSOP
NCP45495XMNTWG
NCP45495XMNTWG
onsemi
L MANGO
MAX809SQ232T1G
MAX809SQ232T1G
onsemi
IC SUPERVISOR 1 CHANNEL SC70-3
NCV551SN50T1G
NCV551SN50T1G
onsemi
IC REG LINEAR 5V 150MA 5TSOP
NCV8170AMX280TCG
NCV8170AMX280TCG
onsemi
IC REG LINEAR 2.8V 150MA 4XDFN
MC33375D-3.0
MC33375D-3.0
onsemi
IC REG LINEAR 3V 300MA 8SOIC
MC78PC30NTRG
MC78PC30NTRG
onsemi
IC REG LINEAR 3V 150MA 5TSOP
CS8190ENF16G
CS8190ENF16G
onsemi
IC DRIVER 16DIP