FQB34N20LTM
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onsemi FQB34N20LTM

Manufacturer No:
FQB34N20LTM
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 200V 31A D2PAK
Delivery:
Payment:
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Product Introduction

Overview

The FQB34N20LTM is a high-performance N-Channel enhancement mode power MOSFET produced by onsemi, formerly known as Fairchild Semiconductor. This device is part of the QFET® series and is manufactured using proprietary planar stripe and DMOS technology. It is designed to offer high efficiency and reliability in various power management applications.

Key Specifications

ParameterValue
Voltage Rating (Vds)200 V
Current Rating (Id)31 A
On-Resistance (Rds(on))80 mΩ
Forward Transconductance (Min)41 S
Package TypeD2PAK
Height4.83 mm
Length10.67 mm

Key Features

  • High current rating of 31 A, making it suitable for high-power applications.
  • Low on-resistance of 80 mΩ, which reduces power losses and improves efficiency.
  • Logic level gate drive, allowing for easy control from standard logic circuits.
  • Robust and reliable design using planar stripe and DMOS technology.
  • Compact D2PAK package, ideal for space-constrained designs.

Applications

The FQB34N20LTM is versatile and can be used in a variety of applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Switching regulators and inverters.
  • Automotive systems, such as battery management and power steering.
  • Industrial control systems and power management modules.

Q & A

  1. What is the voltage rating of the FQB34N20LTM MOSFET?
    The voltage rating of the FQB34N20LTM MOSFET is 200 V.
  2. What is the current rating of the FQB34N20LTM MOSFET?
    The current rating of the FQB34N20LTM MOSFET is 31 A.
  3. What is the on-resistance of the FQB34N20LTM MOSFET?
    The on-resistance of the FQB34N20LTM MOSFET is 80 mΩ.
  4. What type of gate drive does the FQB34N20LTM MOSFET require?
    The FQB34N20LTM MOSFET requires a logic level gate drive.
  5. In what package is the FQB34N20LTM MOSFET available?
    The FQB34N20LTM MOSFET is available in a D2PAK package.
  6. What technology is used to manufacture the FQB34N20LTM MOSFET?
    The FQB34N20LTM MOSFET is manufactured using proprietary planar stripe and DMOS technology.
  7. What are some common applications for the FQB34N20LTM MOSFET?
    The FQB34N20LTM MOSFET is commonly used in power supplies, motor control systems, switching regulators, automotive systems, and industrial control systems.
  8. Is the FQB34N20LTM MOSFET still in production?
    No, the FQB34N20LTM MOSFET is not in production and is considered obsolete.
  9. Where can I find detailed specifications for the FQB34N20LTM MOSFET?
    Detailed specifications for the FQB34N20LTM MOSFET can be found in the datasheet available on websites such as Mouser Electronics and onsemi's official website.
  10. What are the dimensions of the D2PAK package for the FQB34N20LTM MOSFET?
    The D2PAK package for the FQB34N20LTM MOSFET has a height of 4.83 mm and a length of 10.67 mm.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:31A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:75mOhm @ 15.5A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:72 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3900 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.13W (Ta), 180W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number FQB34N20LTM FQB34N20TM FQB4N20LTM
Manufacturer onsemi Fairchild Semiconductor onsemi
Product Status Last Time Buy Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 31A (Tc) 31A (Tc) 3.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 10V 5V, 10V
Rds On (Max) @ Id, Vgs 75mOhm @ 15.5A, 10V 75mOhm @ 15.5A, 10V 1.35Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 5V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 72 nC @ 5 V 78 nC @ 10 V 5.2 nC @ 5 V
Vgs (Max) ±20V ±30V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3900 pF @ 25 V 3100 pF @ 25 V 310 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 3.13W (Ta), 180W (Tc) 3.13W (Ta), 180W (Tc) 3.13W (Ta), 45W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D2PAK (TO-263) D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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