FQB22P10TM-F085
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onsemi FQB22P10TM-F085

Manufacturer No:
FQB22P10TM-F085
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 100V 22A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FQB22P10TM-F085, manufactured by onsemi, is a Power MOSFET specifically engineered to meet the demands of modern power management systems. This P-Channel MOSFET is designed to provide high performance and reliability in various power applications. It is part of onsemi's portfolio of power management solutions, offering advanced features and specifications that cater to the needs of contemporary electronic systems.

Key Specifications

ParameterValue
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current22 A
Rds On - Drain-Source Resistance125 mOhms
Vgs - Gate-Source Voltage-30 V to +30 V
Minimum Operating Temperature-55°C
Maximum Operating Temperature+175°C
Pd - Power DissipationSee datasheet for detailed power dissipation curves

Key Features

  • High current capability with a continuous drain current of 22 A
  • Low on-resistance (Rds On) of 125 mOhms, reducing power losses
  • Wide operating temperature range from -55°C to +175°C
  • Robust gate-source voltage range of -30 V to +30 V
  • Designed for high reliability and performance in power management applications

Applications

The FQB22P10TM-F085 is suitable for a variety of power management applications, including but not limited to:

  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • Automotive and industrial power systems
  • High-power switching and amplification circuits

Q & A

  1. What is the drain-source breakdown voltage of the FQB22P10TM-F085?
    The drain-source breakdown voltage is 100 V.
  2. What is the continuous drain current of the FQB22P10TM-F085?
    The continuous drain current is 22 A.
  3. What is the on-resistance (Rds On) of the FQB22P10TM-F085?
    The on-resistance is 125 mOhms.
  4. What is the gate-source voltage range for the FQB22P10TM-F085?
    The gate-source voltage range is -30 V to +30 V.
  5. What is the operating temperature range of the FQB22P10TM-F085?
    The operating temperature range is from -55°C to +175°C.
  6. What are some typical applications for the FQB22P10TM-F085?
    Typical applications include power supplies, DC-DC converters, motor control systems, automotive and industrial power systems, and high-power switching circuits.
  7. Is the FQB22P10TM-F085 still in production?
    No, the FQB22P10TM is not in current production but can be referenced for legacy systems.
  8. Where can I find detailed specifications for the FQB22P10TM-F085?
    Detailed specifications can be found in the datasheet available on onsemi's website and other electronic component distributors like Mouser Electronics.
  9. What is the power dissipation capability of the FQB22P10TM-F085?
    The power dissipation capability is detailed in the datasheet and depends on various operating conditions.
  10. Is the FQB22P10TM-F085 suitable for high-power applications?
    Yes, it is designed for high-power applications due to its high current and low on-resistance characteristics.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:22A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:125mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:50 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1500 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.75W (Ta), 125W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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