FQB12P20TM
  • Share:

onsemi FQB12P20TM

Manufacturer No:
FQB12P20TM
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 200V 11.5A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FQB12P20TM is a P-Channel Power MOSFET produced by onsemi, part of their QFET® series. This device is designed for low to medium voltage applications and is known for its high performance and reliability. The FQB12P20TM is packaged in a D2PAK configuration, making it suitable for a variety of power management and switching applications.

Key Specifications

ParameterValue
Voltage Rating (Vds)-200 V
Current Rating (Id)-11.5 A
On-Resistance (Rds(on))470 mΩ
Maximum Operating Temperature+150 °C
Power Dissipation (Pd)3.13 W
Channel ModeEnhancement
PackagingD2PAK

Key Features

  • High voltage rating of -200 V, making it suitable for high-power applications.
  • Low on-resistance of 470 mΩ, which minimizes power losses.
  • High current rating of -11.5 A, enabling it to handle substantial current loads.
  • Enhancement mode operation for efficient switching.
  • D2PAK packaging for good thermal performance and ease of use in various applications.

Applications

The FQB12P20TM is versatile and can be used in a variety of applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Switching regulators and inverters.
  • Automotive systems, such as battery management and power distribution.
  • Industrial control systems and power management modules.

Q & A

  1. What is the voltage rating of the FQB12P20TM MOSFET?
    The voltage rating of the FQB12P20TM is -200 V.
  2. What is the maximum current rating of the FQB12P20TM?
    The maximum current rating is -11.5 A.
  3. What is the on-resistance (Rds(on)) of the FQB12P20TM?
    The on-resistance is 470 mΩ.
  4. What is the maximum operating temperature of the FQB12P20TM?
    The maximum operating temperature is +150 °C.
  5. What type of packaging does the FQB12P20TM use?
    The FQB12P20TM is packaged in a D2PAK configuration.
  6. Is the FQB12P20TM suitable for high-power applications?
    Yes, it is suitable for high-power applications due to its high voltage and current ratings.
  7. What are some common applications of the FQB12P20TM?
    Common applications include power supplies, motor control systems, switching regulators, automotive systems, and industrial control systems.
  8. What is the power dissipation (Pd) of the FQB12P20TM?
    The power dissipation is 3.13 W.
  9. Is the FQB12P20TM an enhancement mode MOSFET?
    Yes, it operates in enhancement mode.
  10. Where can I find detailed specifications for the FQB12P20TM?
    Detailed specifications can be found on the official onsemi website, as well as on distributor sites like Mouser, Digi-Key, and TME.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:11.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:470mOhm @ 5.75A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:40 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1200 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.13W (Ta), 120W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$2.12
132

Please send RFQ , we will respond immediately.

Similar Products

Part Number FQB12P20TM FQB12P10TM
Manufacturer onsemi onsemi
Product Status Active Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 100 V
Current - Continuous Drain (Id) @ 25°C 11.5A (Tc) 11.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 470mOhm @ 5.75A, 10V 290mOhm @ 5.75A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V 27 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 25 V 800 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 3.13W (Ta), 120W (Tc) 3.75W (Ta), 75W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

BSC040N10NS5ATMA1
BSC040N10NS5ATMA1
Infineon Technologies
MOSFET N-CH 100V 100A TDSON
BSS84KW-TP
BSS84KW-TP
Micro Commercial Co
MOSFET P-CH 50V 130MA SOT323
STL50NH3LL
STL50NH3LL
STMicroelectronics
MOSFET N-CH 30V 27A POWERFLAT
NVR5198NLT1G
NVR5198NLT1G
onsemi
MOSFET N-CH 60V 1.7A SOT23-3
FDMA430NZ
FDMA430NZ
onsemi
MOSFET N-CH 30V 5A 6MICROFET
FQD19N10LTM
FQD19N10LTM
onsemi
MOSFET N-CH 100V 15.6A DPAK
STD5NM60T4
STD5NM60T4
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
STL36N55M5
STL36N55M5
STMicroelectronics
MOSFET N-CH 550V 22.5A 4PWRFLAT
FQD13N10LTM_NBEL001
FQD13N10LTM_NBEL001
onsemi
MOSFET N-CH 100V 10A DPAK
AO3401AL_DELTA
AO3401AL_DELTA
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V SOT23
NTNS3A65PZT5G
NTNS3A65PZT5G
onsemi
MOSFET P-CH 20V 281MA SOT883
BSS138-F169
BSS138-F169
onsemi
MOSFET N-CH SOT23

Related Product By Brand

NZL7V5AXV3T1G
NZL7V5AXV3T1G
onsemi
TVS DIODE 5VWM 8.8VC SC89-3
MMSZ11T1G
MMSZ11T1G
onsemi
DIODE ZENER 11V 500MW SOD123
BZX55C18_T50A
BZX55C18_T50A
onsemi
DIODE ZENER 18V 500MW DO35
MMBT3904LT1G
MMBT3904LT1G
onsemi
TRANS NPN 40V 0.2A SOT23-3
NTUD3127CT5G
NTUD3127CT5G
onsemi
MOSFET N/P-CH 20V SOT-963
NVMFS5C410NLWFT3G
NVMFS5C410NLWFT3G
onsemi
MOSFET N-CH 40V 48A/315A 5DFN
NB3N502DR2G
NB3N502DR2G
onsemi
IC MULTIPLIER CLOCK PLL 8-SOIC
MC33074APG
MC33074APG
onsemi
IC OPAMP JFET 4 CIRCUIT 14DIP
MC14050BDTEL
MC14050BDTEL
onsemi
BUFFER, 6-FUNC
MC74VHC259DR2G
MC74VHC259DR2G
onsemi
IC LATCH ADDRS 8BIT CMOS 16SOIC
NCP160AMX330TBG
NCP160AMX330TBG
onsemi
IC REG LINEAR 3.3V 250MA 4XDFN
NCV551SN50T1G
NCV551SN50T1G
onsemi
IC REG LINEAR 5V 150MA 5TSOP