FDWS86368-F085
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onsemi FDWS86368-F085

Manufacturer No:
FDWS86368-F085
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 80V 80A POWER56
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDWS86368-F085 is an N-Channel MOSFET from onsemi, designed with the POWERTRENCH technology. This device is optimized for high-performance applications, offering a drain-to-source voltage (VDSS) of 80 V and a continuous drain current (ID) of 80 A. It features a low on-resistance (RDS(on)) of 4.5 mΩ at VGS = 10 V, making it suitable for power-intensive applications. The MOSFET is AEC-Q101 qualified, Pb-free, and RoHS compliant, ensuring reliability and environmental compliance.

Key Specifications

Symbol Parameter Test Conditions Min. Typ. Max. Units
VDSS Drain-to-Source Voltage - - 80 V
VGS Gate-to-Source Voltage - - ±20 V
ID Drain Current (Continuous) VGS = 10 V, TC = 25°C - - 80 A
IDSS Drain-to-Source Leakage Current VDS = 80 V, VGS = 0 V, TJ = 25°C - - 1 μA -
IGSS Gate-to-Source Leakage Current VGS = ±20 V - - ±100 nA -
RDS(on) Drain to Source On Resistance ID = 80 A, VGS = 10 V, TJ = 25°C - 3.7 4.5
TJ, TSTG Operating and Storage Temperature - - -55 to +175 °C
RθJC Thermal Resistance, Junction to Case - - 0.7 °C/W
RθJA Maximum Thermal Resistance, Junction to Ambient - - 50 °C/W

Key Features

  • Typical RDS(on) = 3.7 mΩ at VGS = 10 V, ID = 80 A
  • Typical Qg(tot) = 57 nC at VGS = 10 V, ID = 80 A
  • UIS Capability
  • Wettable Flanks for Automatic Optical Inspection (AOI)
  • AEC-Q101 Qualified and PPAP Capable
  • Pb-free and RoHS Compliant

Applications

  • Automotive Engine Control
  • PowerTrain Management
  • Solenoid and Motor Drivers
  • Integrated Starter/Alternator
  • Primary Switch for 12 V Systems

Q & A

  1. What is the maximum drain-to-source voltage (VDSS) of the FDWS86368-F085?

    The maximum drain-to-source voltage (VDSS) is 80 V.

  2. What is the continuous drain current (ID) rating of this MOSFET?

    The continuous drain current (ID) rating is 80 A at VGS = 10 V and TC = 25°C.

  3. What is the typical on-resistance (RDS(on)) of the FDWS86368-F085?

    The typical on-resistance (RDS(on)) is 3.7 mΩ at VGS = 10 V and ID = 80 A.

  4. Is the FDWS86368-F085 AEC-Q101 qualified?

    Yes, the FDWS86368-F085 is AEC-Q101 qualified.

  5. What are the operating and storage temperature ranges for this MOSFET?

    The operating and storage temperature ranges are -55°C to +175°C.

  6. What is the thermal resistance from junction to case (RθJC) for this device?

    The thermal resistance from junction to case (RθJC) is 0.7°C/W.

  7. What is the maximum thermal resistance from junction to ambient (RθJA) for this device?

    The maximum thermal resistance from junction to ambient (RθJA) is 50°C/W.

  8. Is the FDWS86368-F085 Pb-free and RoHS compliant?

    Yes, the FDWS86368-F085 is Pb-free and RoHS compliant.

  9. What are some common applications for the FDWS86368-F085?

    Common applications include automotive engine control, powertrain management, solenoid and motor drivers, integrated starter/alternator, and primary switch for 12 V systems.

  10. Does the FDWS86368-F085 support automatic optical inspection (AOI)?

    Yes, it features wettable flanks for automatic optical inspection (AOI).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.5mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:75 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4350 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):214W (Tj)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Power56
Package / Case:8-PowerVDFN
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Similar Products

Part Number FDWS86368-F085 FDWS86369-F085 FDWS86068-F085
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 80 V 100 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 65A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 4.5mOhm @ 80A, 10V 7.5mOhm @ 65A, 10V 6.4mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 75 nC @ 10 V 46 nC @ 10 V 43 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4350 pF @ 40 V 2470 pF @ 40 V 2220 pF @ 50 V
FET Feature - - -
Power Dissipation (Max) 214W (Tj) 107W (Tj) 214W (Ta)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package Power56 Power56 8-DFN (5.1x6.3)
Package / Case 8-PowerVDFN 8-PowerVDFN 8-PowerTDFN

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