Overview
The FDWS86369-F085 is a high-performance N-Channel MOSFET produced by onsemi, designed for demanding applications in the automotive and industrial sectors. This device is part of the POWERTRENCH family, known for its advanced trench technology that enhances power efficiency and reliability. With a drain-to-source voltage (VDSS) of 80 V and a continuous drain current (ID) of 65 A, this MOSFET is well-suited for applications requiring high power handling and low on-resistance.
Key Specifications
| Parameter | Symbol | Typical Value | Unit |
|---|---|---|---|
| Drain to Source Voltage | VDSS | 80 | V |
| Gate to Source Voltage | VGS | ±20 | V |
| Continuous Drain Current | ID | 65 | A |
| Drain to Source On-Resistance | RDS(on) | 5.9 mΩ at VGS = 10 V, ID = 65 A | mΩ |
| Total Gate Charge | Qg(tot) | 35 nC at VGS = 10 V, ID = 65 A | nC |
| Operating and Storage Temperature | TJ, TSTG | −55 to +175 °C | °C |
| Thermal Resistance (Junction to Case) | RθJC | 1.4 °C/W | °C/W |
| Thermal Resistance (Junction to Ambient) | RθJA | 50 °C/W | °C/W |
Key Features
- Low On-Resistance: Typical RDS(on) of 5.9 mΩ at VGS = 10 V and ID = 65 A, ensuring minimal power loss.
- High Current Capability: Continuous drain current of 65 A, making it suitable for high-power applications.
- UIS Capability: Unclamped Inductive Switching capability enhances reliability in inductive switching applications.
- Wettable Flanks: Enables automatic optical inspection (AOI) for improved manufacturing efficiency.
- AEC-Q101 Qualified: Meets the stringent requirements for automotive applications, ensuring high reliability and performance.
- Pb-Free and RoHS Compliant: Environmentally friendly and compliant with global regulations.
Applications
- Automotive Engine Control: Suitable for engine management systems and other automotive control units.
- PowerTrain Management: Used in powertrain control modules for efficient power handling.
- Solenoid and Motor Drivers: Ideal for driving solenoids and motors in various automotive and industrial applications.
- Integrated Starter/Alternator: Can be used in integrated starter/alternator systems for improved efficiency.
- Primary Switch for 12 V Systems: Suitable as a primary switch in 12 V automotive systems.
Q & A
- What is the maximum drain-to-source voltage of the FDWS86369-F085 MOSFET?
The maximum drain-to-source voltage (VDSS) is 80 V.
- What is the typical on-resistance of the FDWS86369-F085 MOSFET?
The typical on-resistance (RDS(on)) is 5.9 mΩ at VGS = 10 V and ID = 65 A.
- What is the continuous drain current rating of the FDWS86369-F085 MOSFET?
The continuous drain current (ID) is 65 A.
- Is the FDWS86369-F085 MOSFET AEC-Q101 qualified?
Yes, the FDWS86369-F085 MOSFET is AEC-Q101 qualified, making it suitable for automotive applications.
- What is the thermal resistance (junction to case) of the FDWS86369-F085 MOSFET?
The thermal resistance (junction to case) (RθJC) is 1.4 °C/W.
- Is the FDWS86369-F085 MOSFET Pb-Free and RoHS compliant?
Yes, the FDWS86369-F085 MOSFET is Pb-Free and RoHS compliant.
- What are some typical applications of the FDWS86369-F085 MOSFET?
Typical applications include automotive engine control, powertrain management, solenoid and motor drivers, integrated starter/alternator, and primary switch for 12 V systems.
- What is the total gate charge of the FDWS86369-F085 MOSFET?
The total gate charge (Qg(tot)) is 35 nC at VGS = 10 V and ID = 65 A.
- Does the FDWS86369-F085 MOSFET have wettable flanks for AOI?
Yes, the FDWS86369-F085 MOSFET has wettable flanks, enabling automatic optical inspection (AOI).
- What is the operating and storage temperature range of the FDWS86369-F085 MOSFET?
The operating and storage temperature range is −55 to +175 °C.
