Overview
The FDV304P-CGB8 is a P-Channel enhancement mode field effect transistor (FET) produced by onsemi using their proprietary high cell density DMOS technology. This device is designed to minimize on-state resistance, especially at low gate drive conditions, making it suitable for battery-powered applications such as notebook computers and cellular phones. The FDV304P-CGB8 features very low level gate drive requirements, allowing direct operation in 3 V circuits, and is packaged in a compact industry standard SOT-23 surface mount package.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDSS) | -25 | V |
| Gate-Source Voltage (VGSS) | -8 | V |
| Continuous Drain Current (ID) | -0.46 | A |
| Pulsed Drain Current (ID) | -1.5 | A |
| Maximum Power Dissipation (PD) | 0.35 | W |
| Operating and Storage Temperature Range | -55 to 150 | °C |
| Electrostatic Discharge Rating (ESD) | 6.0 kV (Human Body Model) | kV |
| Thermal Resistance, Junction-to-Ambient (RθJA) | 357 | °C/W |
| Gate Threshold Voltage (VGS(th)) | -0.65 to -1.5 | V |
| Static Drain-Source On-Resistance (RDS(on)) at VGS = -4.5 V | 1.1 Ω | Ω |
| Static Drain-Source On-Resistance (RDS(on)) at VGS = -2.7 V | 1.5 Ω | Ω |
Key Features
- Very low on-state resistance even at low gate drive voltages (e.g., RDS(on) = 1.1 Ω at VGS = -4.5 V and RDS(on) = 1.5 Ω at VGS = -2.7 V)
- Low level gate drive requirements, allowing direct operation in 3 V circuits
- Gate-Source Zener for ESD ruggedness (6 kV Human Body Model)
- Compact industry standard SOT-23 surface mount package
- Pb-Free and Halide-Free
Applications
The FDV304P-CGB8 is particularly suited for battery-powered applications such as:
- Notebook computers
- Cellular phones
- Other portable electronic devices requiring low power consumption and high efficiency
Q & A
- What is the maximum drain-source voltage (VDSS) of the FDV304P-CGB8?
The maximum drain-source voltage (VDSS) is -25 V.
- What is the continuous drain current (ID) rating of the FDV304P-CGB8?
The continuous drain current (ID) rating is -0.46 A.
- What is the maximum power dissipation (PD) of the FDV304P-CGB8?
The maximum power dissipation (PD) is 0.35 W.
- What is the operating and storage temperature range of the FDV304P-CGB8?
The operating and storage temperature range is -55 to 150 °C.
- What is the ESD rating of the FDV304P-CGB8?
The ESD rating is 6.0 kV (Human Body Model).
- What is the thermal resistance, junction-to-ambient (RθJA), of the FDV304P-CGB8?
The thermal resistance, junction-to-ambient (RθJA), is 357 °C/W.
- What is the gate threshold voltage (VGS(th)) range of the FDV304P-CGB8?
The gate threshold voltage (VGS(th)) range is -0.65 to -1.5 V.
- What are the typical on-state resistances (RDS(on)) at different gate-source voltages?
The typical on-state resistances are 1.1 Ω at VGS = -4.5 V and 1.5 Ω at VGS = -2.7 V.
- Is the FDV304P-CGB8 Pb-Free and Halide-Free?
Yes, the FDV304P-CGB8 is Pb-Free and Halide-Free.
- What is the package type of the FDV304P-CGB8?
The package type is SOT-23-3 surface mount.
