FDT86244
  • Share:

onsemi FDT86244

Manufacturer No:
FDT86244
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 150V 2.8A SOT223-4
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDT86244 is an N-Channel Shielded Gate PowerTrench® MOSFET produced by onsemi. This device is part of onsemi's advanced Power Trench® MOSFET family, designed to offer high efficiency and low resistance. The FDT86244 is packaged in a thermally efficient SOT-223-4 surface mount package, making it suitable for a variety of power management applications.

Key Specifications

ParameterValue
Voltage Rating (Vds)150 V
Current Rating (Id)2.8 A (Tc)
Power Dissipation (Pd)2.2 W (Ta)
On-Resistance (Rds(on))128 mΩ @ 2.8 A, 10 V
Threshold Voltage (Vth)4 V @ 250 μA
Package TypeSOT-223-4

Key Features

The FDT86244 features advanced package and silicon combinations that result in low on-resistance and high efficiency. It includes next-generation enhanced body diode technology engineered for soft recovery, which reduces switching losses and improves overall system performance. The thermally efficient SOT-223-4 package enhances heat dissipation, making the device reliable in demanding applications.

Applications

The FDT86244 is suitable for various power management applications, including DC-DC converters, power supplies, motor control circuits, and general-purpose switching. Its high voltage rating and low on-resistance make it an ideal choice for applications requiring efficient power handling and minimal heat generation.

Q & A

  1. What is the voltage rating of the FDT86244 MOSFET?
    The voltage rating of the FDT86244 MOSFET is 150 V.
  2. What is the current rating of the FDT86244 MOSFET?
    The current rating of the FDT86244 MOSFET is 2.8 A (Tc).
  3. What is the power dissipation of the FDT86244 MOSFET?
    The power dissipation of the FDT86244 MOSFET is 2.2 W (Ta).
  4. What is the on-resistance of the FDT86244 MOSFET?
    The on-resistance of the FDT86244 MOSFET is 128 mΩ @ 2.8 A, 10 V.
  5. What package type does the FDT86244 MOSFET use?
    The FDT86244 MOSFET uses a SOT-223-4 surface mount package.
  6. What are the key features of the FDT86244 MOSFET?
    The key features include advanced package and silicon combinations, low on-resistance, high efficiency, and next-generation enhanced body diode technology for soft recovery.
  7. What are some typical applications of the FDT86244 MOSFET?
    Typical applications include DC-DC converters, power supplies, motor control circuits, and general-purpose switching.
  8. Is the FDT86244 MOSFET RoHS compliant?
    Yes, the FDT86244 MOSFET is RoHS compliant.
  9. What is the threshold voltage of the FDT86244 MOSFET?
    The threshold voltage of the FDT86244 MOSFET is 4 V @ 250 μA.
  10. Where can I find detailed specifications for the FDT86244 MOSFET?
    Detailed specifications can be found in the datasheet available on websites such as Mouser, Digi-Key, and the onsemi official website.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:128mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:395 pF @ 75 V
FET Feature:- 
Power Dissipation (Max):2.2W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223-4
Package / Case:TO-261-4, TO-261AA
0 Remaining View Similar

In Stock

$0.91
950

Please send RFQ , we will respond immediately.

Similar Products

Part Number FDT86244 FDT86246
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V 150 V
Current - Continuous Drain (Id) @ 25°C 2.8A (Tc) 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 128mOhm @ 2.8A, 10V 236mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7 nC @ 10 V 4 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 395 pF @ 75 V 215 pF @ 75 V
FET Feature - -
Power Dissipation (Max) 2.2W (Ta) 2.2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-223-4 SOT-223-4
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA

Related Product By Categories

NTLJF4156NT1G
NTLJF4156NT1G
onsemi
MOSFET N-CH 30V 2.5A 6WDFN
STD80N10F7
STD80N10F7
STMicroelectronics
MOSFET N-CH 100V 70A DPAK
FQD4P40TM
FQD4P40TM
onsemi
MOSFET P-CH 400V 2.7A DPAK
NTD2955T4G
NTD2955T4G
onsemi
MOSFET P-CH 60V 12A DPAK
IRF3710PBF
IRF3710PBF
Infineon Technologies
MOSFET N-CH 100V 57A TO220AB
STP3NK90Z
STP3NK90Z
STMicroelectronics
MOSFET N-CH 900V 3A TO220AB
NTMFS5C468NLT1G
NTMFS5C468NLT1G
onsemi
MOSFET N-CH 40V 5DFN
CSD18511Q5A
CSD18511Q5A
Texas Instruments
MOSFET N-CH 40V 159A 8VSON
BUK9635-55A,118
BUK9635-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 34A D2PAK
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
STW88N65M5-4
STW88N65M5-4
STMicroelectronics
MOSFET N-CH 650V 84A TO247-4L
FQB34P10TM-F085
FQB34P10TM-F085
onsemi
MOSFET P-CH 100V 33.5A D2PAK

Related Product By Brand

ESD9D5.0ST5G
ESD9D5.0ST5G
onsemi
TVS DIODE 5VWM 13.5VC SOD923
SZMMBZ5226BLT1G
SZMMBZ5226BLT1G
onsemi
DIODE ZENER 3.3V 225MW SOT23-3
MJE5731AG
MJE5731AG
onsemi
TRANS PNP 375V 1A TO220
FDG6332C
FDG6332C
onsemi
MOSFET N/P-CH 20V SC70-6
FDMT800100DC
FDMT800100DC
onsemi
MOSFET N-CH 100V 24A/162A 8DUAL
MC74HC00ANG
MC74HC00ANG
onsemi
IC GATE NAND 4CH 2-INP 14DIP
ADP3110AKRZ
ADP3110AKRZ
onsemi
IC GATE DRVR HALF-BRIDGE 8SOIC
AMIS30521C5212G
AMIS30521C5212G
onsemi
IC MTRDRV BIPLR 4.75-5.25V 32QFP
MC33064SN-5T1
MC33064SN-5T1
onsemi
IC SUPERVISOR 1 CHANNEL 5TSOP
FAN48610BUC33X
FAN48610BUC33X
onsemi
IC REG BOOST 3.3V 1A 9WLCSP
NCP103AMX180TCG
NCP103AMX180TCG
onsemi
IC REG LINEAR 1.8V 150MA 4UDFN
LM317MBDT
LM317MBDT
onsemi
IC REG LINEAR POS ADJ 500MA DPAK