FDT86244
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onsemi FDT86244

Manufacturer No:
FDT86244
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 150V 2.8A SOT223-4
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The FDT86244 is an N-Channel Shielded Gate PowerTrench® MOSFET produced by onsemi. This device is part of onsemi's advanced Power Trench® MOSFET family, designed to offer high efficiency and low resistance. The FDT86244 is packaged in a thermally efficient SOT-223-4 surface mount package, making it suitable for a variety of power management applications.

Key Specifications

ParameterValue
Voltage Rating (Vds)150 V
Current Rating (Id)2.8 A (Tc)
Power Dissipation (Pd)2.2 W (Ta)
On-Resistance (Rds(on))128 mΩ @ 2.8 A, 10 V
Threshold Voltage (Vth)4 V @ 250 μA
Package TypeSOT-223-4

Key Features

The FDT86244 features advanced package and silicon combinations that result in low on-resistance and high efficiency. It includes next-generation enhanced body diode technology engineered for soft recovery, which reduces switching losses and improves overall system performance. The thermally efficient SOT-223-4 package enhances heat dissipation, making the device reliable in demanding applications.

Applications

The FDT86244 is suitable for various power management applications, including DC-DC converters, power supplies, motor control circuits, and general-purpose switching. Its high voltage rating and low on-resistance make it an ideal choice for applications requiring efficient power handling and minimal heat generation.

Q & A

  1. What is the voltage rating of the FDT86244 MOSFET?
    The voltage rating of the FDT86244 MOSFET is 150 V.
  2. What is the current rating of the FDT86244 MOSFET?
    The current rating of the FDT86244 MOSFET is 2.8 A (Tc).
  3. What is the power dissipation of the FDT86244 MOSFET?
    The power dissipation of the FDT86244 MOSFET is 2.2 W (Ta).
  4. What is the on-resistance of the FDT86244 MOSFET?
    The on-resistance of the FDT86244 MOSFET is 128 mΩ @ 2.8 A, 10 V.
  5. What package type does the FDT86244 MOSFET use?
    The FDT86244 MOSFET uses a SOT-223-4 surface mount package.
  6. What are the key features of the FDT86244 MOSFET?
    The key features include advanced package and silicon combinations, low on-resistance, high efficiency, and next-generation enhanced body diode technology for soft recovery.
  7. What are some typical applications of the FDT86244 MOSFET?
    Typical applications include DC-DC converters, power supplies, motor control circuits, and general-purpose switching.
  8. Is the FDT86244 MOSFET RoHS compliant?
    Yes, the FDT86244 MOSFET is RoHS compliant.
  9. What is the threshold voltage of the FDT86244 MOSFET?
    The threshold voltage of the FDT86244 MOSFET is 4 V @ 250 μA.
  10. Where can I find detailed specifications for the FDT86244 MOSFET?
    Detailed specifications can be found in the datasheet available on websites such as Mouser, Digi-Key, and the onsemi official website.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:128mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:395 pF @ 75 V
FET Feature:- 
Power Dissipation (Max):2.2W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223-4
Package / Case:TO-261-4, TO-261AA
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Similar Products

Part Number FDT86244 FDT86246
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V 150 V
Current - Continuous Drain (Id) @ 25°C 2.8A (Tc) 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 128mOhm @ 2.8A, 10V 236mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7 nC @ 10 V 4 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 395 pF @ 75 V 215 pF @ 75 V
FET Feature - -
Power Dissipation (Max) 2.2W (Ta) 2.2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-223-4 SOT-223-4
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA

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