FDT3612-SN00151
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onsemi FDT3612-SN00151

Manufacturer No:
FDT3612-SN00151
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDT3612-SN00151 is an N-Channel MOSFET produced by onsemi, formerly known as Fairchild Semiconductor. This device is part of the POWERTRENCH® family, known for its advanced technology that offers faster switching and lower gate charge compared to other MOSFETs with similar RDS(ON) specifications. This makes the FDT3612-SN00151 an efficient and reliable choice for various power management applications.

Key Specifications

ParameterValue
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Continuous Drain Current (Id) @ 25°C3.7 A (Ta)
Package TypeSOT-223 (Surface Mount)
Power Dissipation (Pd) @ 25°C1.1 W (Ta)

Key Features

  • Faster switching times and lower gate charge, enhancing overall efficiency and performance.
  • Low RDS(ON) for reduced power losses.
  • High drain to source voltage (Vdss) of 100 V, making it suitable for high-voltage applications.
  • Surface mount SOT-223 package for compact and reliable mounting.
  • High continuous drain current of 3.7 A at 25°C, supporting demanding power requirements.

Applications

The FDT3612-SN00151 is versatile and can be used in a variety of applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Automotive systems, such as battery management and power distribution.
  • Industrial control systems and automation.
  • Consumer electronics requiring efficient power management.

Q & A

  1. What is the drain to source voltage (Vdss) of the FDT3612-SN00151?
    The drain to source voltage (Vdss) is 100 V.
  2. What is the continuous drain current (Id) at 25°C?
    The continuous drain current (Id) at 25°C is 3.7 A (Ta).
  3. What package type does the FDT3612-SN00151 use?
    The FDT3612-SN00151 uses a SOT-223 surface mount package.
  4. What is the power dissipation (Pd) at 25°C?
    The power dissipation (Pd) at 25°C is 1.1 W (Ta).
  5. What are the key benefits of the POWERTRENCH® technology in the FDT3612-SN00151?
    The POWERTRENCH® technology offers faster switching times and lower gate charge, enhancing efficiency and performance.
  6. In what types of applications is the FDT3612-SN00151 commonly used?
    The FDT3612-SN00151 is commonly used in power supplies, motor control systems, automotive systems, industrial control systems, and consumer electronics requiring efficient power management.
  7. What is the RDS(ON) specification of the FDT3612-SN00151?
    While the exact RDS(ON) value is not specified here, it is noted for being low, contributing to reduced power losses.
  8. How does the FDT3612-SN00151 compare to other MOSFETs in terms of performance?
    The FDT3612-SN00151 offers faster switching and lower gate charge compared to other MOSFETs with similar RDS(ON) specifications, making it more efficient.
  9. What are the thermal considerations for the FDT3612-SN00151?
    Thermal runaway can be a concern; proper thermal management is necessary to prevent this issue.
  10. Where can I find detailed datasheets and specifications for the FDT3612-SN00151?
    Detailed datasheets and specifications can be found on the official onsemi website, as well as through distributors like Digi-Key and Mouser.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:120mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:632 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):1.1W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223
Package / Case:TO-261-4, TO-261AA
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