FDS4675-F085
  • Share:

onsemi FDS4675-F085

Manufacturer No:
FDS4675-F085
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 40V 11A 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDS4675-F085 is a 40V P-Channel PowerTrench MOSFET produced by onsemi. This device is part of onsemi's advanced PowerTrench process and is optimized for power management applications. It is known for its rugged gate design, making it suitable for demanding environments. The FDS4675-F085 offers high performance and reliability, making it a popular choice in various electronic systems.

Key Specifications

ParameterValue
Drain to Source Voltage (Vdss)40 V
Continuous Drain Current (Id) @ 25°C11 A
Maximum Junction Temperature (TJ)150°C
Maximum Power Dissipation (Ta)2.4 W
Maximum Pulse Drain Current50 A
Drive Voltage (Max Rds On, Min Rds On)Vgs = -10 V, Vds = -10 V

Key Features

  • Rugged gate design for enhanced reliability in harsh environments.
  • High current capability with a continuous drain current of 11 A at 25°C.
  • Low on-resistance (Rds(on)) for efficient power management.
  • High maximum junction temperature of 150°C, ensuring operation in demanding conditions.
  • Optimized for power management applications.

Applications

The FDS4675-F085 is suitable for a variety of power management applications, including:

  • DC-DC converters and power supplies.
  • Motor control and drive systems.
  • Power amplifiers and audio systems.
  • Automotive and industrial control systems.
  • General-purpose switching applications.

Q & A

  1. What is the maximum drain to source voltage (Vdss) of the FDS4675-F085?
    The maximum drain to source voltage (Vdss) is 40 V.
  2. What is the continuous drain current (Id) at 25°C?
    The continuous drain current (Id) at 25°C is 11 A.
  3. What is the maximum junction temperature (TJ) of the FDS4675-F085?
    The maximum junction temperature (TJ) is 150°C.
  4. What is the maximum power dissipation (Ta) of the device?
    The maximum power dissipation (Ta) is 2.4 W.
  5. What is the maximum pulse drain current of the FDS4675-F085?
    The maximum pulse drain current is 50 A.
  6. What is the typical application of the FDS4675-F085?
    The FDS4675-F085 is typically used in power management applications, including DC-DC converters, motor control, and general-purpose switching.
  7. Why is the FDS4675-F085 considered rugged?
    The FDS4675-F085 is considered rugged due to its enhanced gate design, which improves its reliability in harsh environments.
  8. What is the technology used in the FDS4675-F085?
    The FDS4675-F085 uses onsemi's advanced PowerTrench process.
  9. Where can I find detailed specifications for the FDS4675-F085?
    Detailed specifications can be found in the datasheet available on onsemi's official website, Digi-Key, and other electronic component suppliers.
  10. Is the FDS4675-F085 suitable for automotive applications?
    Yes, the FDS4675-F085 is suitable for automotive and industrial control systems due to its robust design and high performance characteristics.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:11A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:13mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:56 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4350 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):2.4W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
0 Remaining View Similar

In Stock

-
513

Please send RFQ , we will respond immediately.

Related Product By Categories

STD26P3LLH6
STD26P3LLH6
STMicroelectronics
MOSFET P-CH 30V 12A DPAK
BSC093N15NS5ATMA1
BSC093N15NS5ATMA1
Infineon Technologies
MOSFET N-CH 150V 87A TDSON
NTS4173PT1G
NTS4173PT1G
onsemi
MOSFET P-CH 30V 1.2A SC70-3
CSD17581Q5AT
CSD17581Q5AT
Texas Instruments
MOSFET N-CH 30V 24A/123A 8VSON
IRF3710PBF
IRF3710PBF
Infineon Technologies
MOSFET N-CH 100V 57A TO220AB
STH275N8F7-2AG
STH275N8F7-2AG
STMicroelectronics
MOSFET N-CH 80V 180A H2PAK-2
BUK9M85-60EX
BUK9M85-60EX
Nexperia USA Inc.
MOSFET N-CH 60V 12.8A LFPAK33
PMCXB900UE147
PMCXB900UE147
NXP USA Inc.
SMALL SIGNAL FET
BSS138K
BSS138K
onsemi
MOSFET N-CH 50V 220MA SOT23-3
STF9N60M2
STF9N60M2
STMicroelectronics
MOSFET N-CH 600V 5.5A TO220FP
FQD2N60CTM
FQD2N60CTM
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 1
STW15NB50
STW15NB50
STMicroelectronics
MOSFET N-CH 500V 14.6A TO247-3

Related Product By Brand

NZL7V5AXV3T1G
NZL7V5AXV3T1G
onsemi
TVS DIODE 5VWM 8.8VC SC89-3
BAV70_D87Z
BAV70_D87Z
onsemi
DIODE ARRAY GP 70V 200MA SOT23-3
1N5353BRL
1N5353BRL
onsemi
DIODE ZENER 16V 5W AXIAL
NJVMJD31T4G
NJVMJD31T4G
onsemi
TRANS NPN 40V 3A DPAK
BC547BTAR
BC547BTAR
onsemi
TRANS NPN 45V 0.1A TO92-3
FDD2572-F085
FDD2572-F085
onsemi
MOSFET N-CH 150V 4A/29A TO252AA
J113-D74Z
J113-D74Z
onsemi
JFET N-CH 35V 625MW TO92
AMIS30622C6227G
AMIS30622C6227G
onsemi
IC MTR DRV BIPOLR 6.5-29V 20SOIC
STK672-410C-E
STK672-410C-E
onsemi
IC MOTOR DRIVER UNIPOLAR 19SIP
REF3033TB-GT3
REF3033TB-GT3
onsemi
IC VREF SERIES 0.2% SOT23-3
MC7812BTG
MC7812BTG
onsemi
IC REG LINEAR 12V 1A TO220AB
MC33375ST-3.0T3
MC33375ST-3.0T3
onsemi
IC REG LINEAR 3V 300MA SOT223