FDS4675-F085
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onsemi FDS4675-F085

Manufacturer No:
FDS4675-F085
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 40V 11A 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDS4675-F085 is a 40V P-Channel PowerTrench MOSFET produced by onsemi. This device is part of onsemi's advanced PowerTrench process and is optimized for power management applications. It is known for its rugged gate design, making it suitable for demanding environments. The FDS4675-F085 offers high performance and reliability, making it a popular choice in various electronic systems.

Key Specifications

ParameterValue
Drain to Source Voltage (Vdss)40 V
Continuous Drain Current (Id) @ 25°C11 A
Maximum Junction Temperature (TJ)150°C
Maximum Power Dissipation (Ta)2.4 W
Maximum Pulse Drain Current50 A
Drive Voltage (Max Rds On, Min Rds On)Vgs = -10 V, Vds = -10 V

Key Features

  • Rugged gate design for enhanced reliability in harsh environments.
  • High current capability with a continuous drain current of 11 A at 25°C.
  • Low on-resistance (Rds(on)) for efficient power management.
  • High maximum junction temperature of 150°C, ensuring operation in demanding conditions.
  • Optimized for power management applications.

Applications

The FDS4675-F085 is suitable for a variety of power management applications, including:

  • DC-DC converters and power supplies.
  • Motor control and drive systems.
  • Power amplifiers and audio systems.
  • Automotive and industrial control systems.
  • General-purpose switching applications.

Q & A

  1. What is the maximum drain to source voltage (Vdss) of the FDS4675-F085?
    The maximum drain to source voltage (Vdss) is 40 V.
  2. What is the continuous drain current (Id) at 25°C?
    The continuous drain current (Id) at 25°C is 11 A.
  3. What is the maximum junction temperature (TJ) of the FDS4675-F085?
    The maximum junction temperature (TJ) is 150°C.
  4. What is the maximum power dissipation (Ta) of the device?
    The maximum power dissipation (Ta) is 2.4 W.
  5. What is the maximum pulse drain current of the FDS4675-F085?
    The maximum pulse drain current is 50 A.
  6. What is the typical application of the FDS4675-F085?
    The FDS4675-F085 is typically used in power management applications, including DC-DC converters, motor control, and general-purpose switching.
  7. Why is the FDS4675-F085 considered rugged?
    The FDS4675-F085 is considered rugged due to its enhanced gate design, which improves its reliability in harsh environments.
  8. What is the technology used in the FDS4675-F085?
    The FDS4675-F085 uses onsemi's advanced PowerTrench process.
  9. Where can I find detailed specifications for the FDS4675-F085?
    Detailed specifications can be found in the datasheet available on onsemi's official website, Digi-Key, and other electronic component suppliers.
  10. Is the FDS4675-F085 suitable for automotive applications?
    Yes, the FDS4675-F085 is suitable for automotive and industrial control systems due to its robust design and high performance characteristics.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:11A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:13mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:56 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4350 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):2.4W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
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