FDS4465-F085
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onsemi FDS4465-F085

Manufacturer No:
FDS4465-F085
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 13.5A 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDS4465-F085 is a P-Channel MOSFET from onsemi, utilizing their advanced PowerTrench process. This device is optimized for power management applications and features a rugged gate design. It supports a wide range of gate drive voltages from 1.8 V to 8 V, making it versatile for various power management needs.

Key Specifications

ParameterValueUnit
Drain-to-Source Voltage (VDSS)-20V
Gate-to-Source Voltage (VGSS)±8V
Drain Current Continuous (ID)-13.5A
Drain Current Pulsed (ID)-50A
Power Dissipation (PD)2.5 (Note 1a), 1.5 (Note 1b), 1.2 (Note 1c)W
Thermal Resistance, Junction-to-Ambient (RθJA)50 (Note 1a), 125 (Note 1c)°C/W
Operating and Storage Junction Temperature Range (TJ, TSTG)-55 to +175°C
Drain-Source On Resistance (RDS(on)) @ VGS = -4.5 V8.5 mΩ
Drain-Source On Resistance (RDS(on)) @ VGS = -2.5 V10.5 mΩ
Drain-Source On Resistance (RDS(on)) @ VGS = -1.8 V14 mΩ
Package StyleSOIC-8
Mounting MethodSurface Mount

Key Features

  • Fast switching speed
  • High performance trench technology for extremely low RDS(on)
  • High current and power handling capability
  • Rugged gate design
  • Wide range of gate drive voltage (1.8 V – 8 V)

Applications

  • Power management
  • Load switch
  • Battery protection

Q & A

  1. What is the drain-to-source voltage rating of the FDS4465-F085?
    The drain-to-source voltage rating is -20 V.
  2. What is the maximum continuous drain current of the FDS4465-F085?
    The maximum continuous drain current is -13.5 A.
  3. What is the thermal resistance, junction-to-ambient, for the FDS4465-F085?
    The thermal resistance, junction-to-ambient, is 50 °C/W (Note 1a) and 125 °C/W (Note 1c).
  4. What are the typical applications of the FDS4465-F085?
    The typical applications include power management, load switch, and battery protection.
  5. What is the package style of the FDS4465-F085?
    The package style is SOIC-8.
  6. What is the mounting method for the FDS4465-F085?
    The mounting method is surface mount.
  7. What are the key features of the FDS4465-F085?
    The key features include fast switching speed, high performance trench technology, high current and power handling capability, and a rugged gate design.
  8. What is the gate drive voltage range for the FDS4465-F085?
    The gate drive voltage range is from 1.8 V to 8 V.
  9. What is the maximum power dissipation of the FDS4465-F085?
    The maximum power dissipation is 2.5 W (Note 1a), 1.5 W (Note 1b), and 1.2 W (Note 1c).
  10. What is the operating and storage junction temperature range for the FDS4465-F085?
    The operating and storage junction temperature range is -55 to +175 °C.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:13.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:8.5mOhm @ 13.5A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:120 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:8237 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
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