FDS4465-F085
  • Share:

onsemi FDS4465-F085

Manufacturer No:
FDS4465-F085
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 13.5A 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDS4465-F085 is a P-Channel MOSFET from onsemi, utilizing their advanced PowerTrench process. This device is optimized for power management applications and features a rugged gate design. It supports a wide range of gate drive voltages from 1.8 V to 8 V, making it versatile for various power management needs.

Key Specifications

ParameterValueUnit
Drain-to-Source Voltage (VDSS)-20V
Gate-to-Source Voltage (VGSS)±8V
Drain Current Continuous (ID)-13.5A
Drain Current Pulsed (ID)-50A
Power Dissipation (PD)2.5 (Note 1a), 1.5 (Note 1b), 1.2 (Note 1c)W
Thermal Resistance, Junction-to-Ambient (RθJA)50 (Note 1a), 125 (Note 1c)°C/W
Operating and Storage Junction Temperature Range (TJ, TSTG)-55 to +175°C
Drain-Source On Resistance (RDS(on)) @ VGS = -4.5 V8.5 mΩ
Drain-Source On Resistance (RDS(on)) @ VGS = -2.5 V10.5 mΩ
Drain-Source On Resistance (RDS(on)) @ VGS = -1.8 V14 mΩ
Package StyleSOIC-8
Mounting MethodSurface Mount

Key Features

  • Fast switching speed
  • High performance trench technology for extremely low RDS(on)
  • High current and power handling capability
  • Rugged gate design
  • Wide range of gate drive voltage (1.8 V – 8 V)

Applications

  • Power management
  • Load switch
  • Battery protection

Q & A

  1. What is the drain-to-source voltage rating of the FDS4465-F085?
    The drain-to-source voltage rating is -20 V.
  2. What is the maximum continuous drain current of the FDS4465-F085?
    The maximum continuous drain current is -13.5 A.
  3. What is the thermal resistance, junction-to-ambient, for the FDS4465-F085?
    The thermal resistance, junction-to-ambient, is 50 °C/W (Note 1a) and 125 °C/W (Note 1c).
  4. What are the typical applications of the FDS4465-F085?
    The typical applications include power management, load switch, and battery protection.
  5. What is the package style of the FDS4465-F085?
    The package style is SOIC-8.
  6. What is the mounting method for the FDS4465-F085?
    The mounting method is surface mount.
  7. What are the key features of the FDS4465-F085?
    The key features include fast switching speed, high performance trench technology, high current and power handling capability, and a rugged gate design.
  8. What is the gate drive voltage range for the FDS4465-F085?
    The gate drive voltage range is from 1.8 V to 8 V.
  9. What is the maximum power dissipation of the FDS4465-F085?
    The maximum power dissipation is 2.5 W (Note 1a), 1.5 W (Note 1b), and 1.2 W (Note 1c).
  10. What is the operating and storage junction temperature range for the FDS4465-F085?
    The operating and storage junction temperature range is -55 to +175 °C.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:13.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:8.5mOhm @ 13.5A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:120 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:8237 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
0 Remaining View Similar

In Stock

-
563

Please send RFQ , we will respond immediately.

Related Product By Categories

PSMN4R0-30YLDX
PSMN4R0-30YLDX
Nexperia USA Inc.
MOSFET N-CH 30V 95A LFPAK56
STD3N62K3
STD3N62K3
STMicroelectronics
MOSFET N-CH 620V 2.7A DPAK
IRF740PBF-BE3
IRF740PBF-BE3
Vishay Siliconix
MOSFET N-CH 400V 10A TO220AB
PSMN0R9-25YLDX
PSMN0R9-25YLDX
Nexperia USA Inc.
MOSFET N-CH 25V 300A LFPAK56
STL36N55M5
STL36N55M5
STMicroelectronics
MOSFET N-CH 550V 22.5A 4PWRFLAT
PMV50XP215
PMV50XP215
NXP USA Inc.
P-CHANNEL MOSFET
NTMFS002P03P8ZT1G
NTMFS002P03P8ZT1G
onsemi
MOSFET, POWER -30V P-CHANNEL, SO
FDD9507L-F085
FDD9507L-F085
onsemi
MOSFET P-CH 40V 100A DPAK
STW48N60M6-4
STW48N60M6-4
STMicroelectronics
MOSFET N-CH 600V 39A TO247-4
STW48NM60N
STW48NM60N
STMicroelectronics
MOSFET N-CH 600V 44A TO247
STF38N65M5
STF38N65M5
STMicroelectronics
MOSFET N-CH 650V 30A TO220FP
PH1930AL,115
PH1930AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56

Related Product By Brand

MM3Z13VT1G
MM3Z13VT1G
onsemi
DIODE ZENER 13V 300MW SOD323
1N5353BRL
1N5353BRL
onsemi
DIODE ZENER 16V 5W AXIAL
MPSA42G
MPSA42G
onsemi
TRANS NPN 300V 0.5A TO92
FCMT125N65S3
FCMT125N65S3
onsemi
MOSFET N-CH 650V 24A 4PQFN
MC74HC4051ADWR2G
MC74HC4051ADWR2G
onsemi
IC MUX/DEMUX 8X1 16SOIC
MC74HC32ADTEL
MC74HC32ADTEL
onsemi
IC GATE OR 4CH 2-INP 14TSSOP
CAT4008Y-T2
CAT4008Y-T2
onsemi
IC LED DRVR LINEAR 80MA 16TSSOP
AMIS30622C6227G
AMIS30622C6227G
onsemi
IC MTR DRV BIPOLR 6.5-29V 20SOIC
NCV7719DQR2G
NCV7719DQR2G
onsemi
IC MOTOR DRVR 3.15V-5.25V 24SSOP
MC34161DMR2G
MC34161DMR2G
onsemi
IC SUPERVISOR 2 CHANNEL MICRO8
LM317MBDT
LM317MBDT
onsemi
IC REG LINEAR POS ADJ 500MA DPAK
MC7808BTG
MC7808BTG
onsemi
IC REG LINEAR 8V 1A TO220AB