Overview
The FDS4435BZ-F085 is a P-Channel PowerTrench® MOSFET produced by onsemi, utilizing their advanced PowerTrench process to minimize on-state resistance. This device is particularly suited for power management and load switching applications, commonly found in notebook computers and portable battery packs. It offers high performance, low on-state resistance, and robust current handling capabilities, making it an ideal choice for various power-intensive applications.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VDS (Drain to Source Voltage) | - | - | - | -30 | V |
| VGS (Gate to Source Voltage) | - | - | - | ±25 | V |
| ID (Drain Current) - Continuous | TA = 25°C | - | - | -8.8 | A |
| ID (Drain Current) - Pulsed | - | - | - | -50 | A |
| PD (Power Dissipation) - TA = 25°C | - | - | - | 2.5 | W |
| EAS (Single Pulse Avalanche Energy) | - | - | - | 24 | mJ |
| TJ, TSTG (Operating and Storage Junction Temperature Range) | - | -55 | - | 150 | °C |
| RJC (Thermal Resistance, Junction to Case) | - | - | - | 25 | °C/W |
| RJA (Thermal Resistance, Junction to Ambient) | - | - | - | 50 | °C/W |
| rDS(on) (Static Drain to Source On Resistance) at VGS = -10V, ID = -8.8A | - | 16 | 20 | - | mΩ |
| rDS(on) (Static Drain to Source On Resistance) at VGS = -4.5V, ID = -6.7A | - | 26 | 35 | - | mΩ |
Key Features
- High performance trench technology for extremely low RDS(on)
- Max RDS(on) = 20 mΩ at VGS = -10 V, ID = -8.8 A
- Max RDS(on) = 35 mΩ at VGS = -4.5 V, ID = -6.7 A
- Extended VGSS range (-25 V) for battery applications
- HBM ESD protection level of ±3.8 kV typical
- High power and current handling capability
- Lead-free and RoHS compliant
- Qualified to AEC Q101
Applications
The FDS4435BZ-F085 is well-suited for various power management and load switching applications, particularly in:
- Notebook computers
- Portable battery packs
- Other power-intensive electronic devices requiring efficient power management
Q & A
- What is the maximum drain to source voltage (VDS) for the FDS4435BZ-F085?
The maximum drain to source voltage (VDS) is -30 V. - What is the maximum continuous drain current (ID) at TA = 25°C?
The maximum continuous drain current (ID) is -8.8 A. - What is the typical ESD protection level for this MOSFET?
The typical ESD protection level is ±3.8 kV. - What is the thermal resistance from junction to ambient (RJA) for this device?
The thermal resistance from junction to ambient (RJA) is 50 °C/W. - Is the FDS4435BZ-F085 RoHS compliant?
Yes, the FDS4435BZ-F085 is lead-free and RoHS compliant. - What are the typical applications for the FDS4435BZ-F085?
The typical applications include power management and load switching in notebook computers and portable battery packs. - What is the maximum power dissipation (PD) at TA = 25°C?
The maximum power dissipation (PD) is 2.5 W. - What is the single pulse avalanche energy (EAS) for this MOSFET?
The single pulse avalanche energy (EAS) is 24 mJ. - What is the operating and storage junction temperature range (TJ, TSTG) for this device?
The operating and storage junction temperature range is -55 to +150 °C. - What is the static drain to source on resistance (rDS(on)) at VGS = -10V and ID = -8.8A?
The static drain to source on resistance (rDS(on)) is 20 mΩ.
