Overview
The FDS4435BZ is a P-Channel PowerTrench® MOSFET produced by onsemi. This device is fabricated using onsemi’s advanced PowerTrench process, which is designed to minimize on-state resistance. It is particularly suited for power management and load switching applications, commonly found in notebook computers and portable battery packs.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VDS (Drain to Source Voltage) | - | - | - | -30 | V |
| VGS (Gate to Source Voltage) | - | - | - | ±25 | V |
| ID (Drain Current) - Continuous | TA = 25°C | - | - | -8.8 | A |
| PD (Power Dissipation) | TA = 25°C | - | - | 2.5 | W |
| rDS(on) (Drain-Source On-State Resistance) | VGS = -10V, ID = -8.8A | - | 20 | - | mΩ |
| rDS(on) (Drain-Source On-State Resistance) | VGS = -4.5V, ID = -6.7A | - | 35 | - | mΩ |
| TJ (Junction Temperature) | - | -55 | - | 150 | °C |
| Qg (Total Gate Charge) | - | - | 28 | - | nC |
| Package | - | - | - | SO-8 | - |
Key Features
- Max rDS(on) = 20mΩ at VGS = -10V, ID = -8.8A
- Max rDS(on) = 35mΩ at VGS = -4.5V, ID = -6.7A
- Extended VGSS range (-25V) for battery applications
- HBM ESD protection level of ±3.8kV typical
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability
- Termination is Lead-free and RoHS compliant
Applications
The FDS4435BZ is well suited for power management and load switching applications, particularly in:
- Notebook Computers
- Portable Battery Packs
Q & A
- What is the maximum drain to source voltage (VDS) of the FDS4435BZ?
The maximum drain to source voltage (VDS) is -30V.
- What is the maximum continuous drain current (ID) of the FDS4435BZ?
The maximum continuous drain current (ID) is -8.8A.
- What is the maximum power dissipation (PD) of the FDS4435BZ?
The maximum power dissipation (PD) is 2.5W.
- What is the typical on-state resistance (rDS(on)) of the FDS4435BZ at VGS = -10V and ID = -8.8A?
The typical on-state resistance (rDS(on)) is 20mΩ at VGS = -10V and ID = -8.8A.
- What is the package type of the FDS4435BZ?
The package type is SO-8.
- Does the FDS4435BZ have ESD protection?
Yes, it has an HBM ESD protection level of ±3.8kV typical.
- Is the FDS4435BZ RoHS compliant?
Yes, the termination is Lead-free and RoHS compliant.
- What are the typical applications of the FDS4435BZ?
The FDS4435BZ is typically used in power management and load switching applications in notebook computers and portable battery packs.
- What is the maximum junction temperature (TJ) of the FDS4435BZ?
The maximum junction temperature (TJ) is 150°C.
- What is the total gate charge (Qg) of the FDS4435BZ?
The total gate charge (Qg) is 28nC.
