Overview
The FDP20N50F is a high-voltage N-Channel UniFET MOSFET produced by onsemi. This device is part of onsemi's UniFET MOSFET family, which utilizes planar stripe and DMOS technology to offer enhanced performance. The FDP20N50F is designed to reduce on-state resistance and provide better switching performance along with higher avalanche energy strength. It is particularly suited for applications where the performance of the MOSFET's body diode is critical.
Key Specifications
| Parameter | Symbol | Unit | Min | Typ | Max |
|---|---|---|---|---|---|
| Drain to Source Voltage | VDSS | V | - | - | 500 |
| Gate to Source Voltage | VGSS | V | - | - | ±30 |
| Continuous Drain Current (TC = 25°C) | ID | A | - | - | 20 |
| Pulsed Drain Current | IDM | A | - | - | 80 |
| Static Drain-Source On Resistance | RDS(on) | Ω | 0.22 | 0.26 | - |
| Gate Threshold Voltage | VGS(th) | V | 3.0 | - | 5.0 |
| Power Dissipation (TC = 25°C) | PD | W | - | - | 250 |
| Thermal Resistance, Junction-to-Case | RθJC | °C/W | - | - | 0.5 |
Key Features
- Low On-State Resistance: RDS(on) = 210 mΩ (Typ.) @ VGS = 10 V, ID = 10 A
- Low Gate Charge: Total Gate Charge at 10 V is typically 50 nC
- Enhanced Body Diode Performance: Reverse recovery time (trr) is less than 100 ns and reverse dv/dt immunity is 15 V/ns
- Avalanche Tested: 100% avalanche tested for reliability
- dv/dt Capability: Improved dv/dt capability for better switching performance
- Pb-Free and RoHS Compliant: Environmentally friendly and compliant with RoHS standards
Applications
- LCD/LED TV Power Supplies: Suitable for power supplies in flat panel displays
- Lighting Systems: Used in various lighting applications including electronic lamp ballasts
- Uninterruptible Power Supplies (UPS): Ideal for UPS systems requiring high reliability and efficiency
- AC-DC Power Supplies: Applicable in power factor correction (PFC) and other AC-DC power supply applications
Q & A
- What is the maximum drain to source voltage of the FDP20N50F MOSFET?
The maximum drain to source voltage (VDSS) is 500 V.
- What is the typical on-state resistance of the FDP20N50F?
The typical on-state resistance (RDS(on)) is 210 mΩ at VGS = 10 V and ID = 10 A.
- What is the maximum continuous drain current of the FDP20N50F at 25°C?
The maximum continuous drain current (ID) is 20 A at 25°C.
- What is the gate threshold voltage range of the FDP20N50F?
The gate threshold voltage (VGS(th)) range is from 3.0 V to 5.0 V.
- Is the FDP20N50F Pb-Free and RoHS compliant?
Yes, the FDP20N50F is Pb-Free and RoHS compliant.
- What are some typical applications of the FDP20N50F MOSFET?
Typical applications include LCD/LED TV power supplies, lighting systems, uninterruptible power supplies (UPS), and AC-DC power supplies.
- What is the thermal resistance, junction-to-case, of the FDP20N50F?
The thermal resistance, junction-to-case (RθJC), is 0.5 °C/W.
- How does the FDP20N50F improve system reliability?
The FDP20N50F improves system reliability by enhancing the body diode’s reverse recovery performance and providing better switching characteristics.
- What is the maximum power dissipation of the FDP20N50F at 25°C?
The maximum power dissipation (PD) is 250 W at 25°C.
- What is the reverse recovery time (trr) of the FDP20N50F's body diode?
The reverse recovery time (trr) of the body diode is less than 100 ns.
