FDP150N10A-F102
  • Share:

onsemi FDP150N10A-F102

Manufacturer No:
FDP150N10A-F102
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET N-CH 100V 50A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDP150N10A-F102 is an N-Channel MOSFET produced by onsemi, utilizing their advanced POWERTRENCH process. This technology is designed to minimize on-state resistance while maintaining superior switching performance. The device is packaged in a TO-220 case and is known for its high power and current handling capabilities, making it suitable for a variety of high-performance applications.

Key Specifications

ParameterUnitMinTypMax
Drain to Source Voltage (VDSS)V--100
Gate to Source Voltage (VGSS)V--±20
Continuous Drain Current (ID)A--50 (at TC = 25°C), 36 (at TC = 100°C)
Pulsed Drain Current (IDM)A--200
Static Drain to Source On Resistance (RDS(on))-12.515.0
Gate Threshold Voltage (VGS(th))V2.0-4.0
Total Gate Charge (Qg(tot))nC-16.221.0
Thermal Resistance, Junction to Case (RθJC)°C/W--1.6
Thermal Resistance, Junction to Ambient (RθJA)°C/W--62.5

Key Features

  • Low on-state resistance (RDS(on) = 12.5 mΩ typical at VGS = 10 V, ID = 50 A)
  • Fast switching speed
  • Low gate charge (QG = 16.2 nC typical)
  • High performance trench technology for extremely low RDS(on)
  • High power and current handling capability
  • RoHS compliant

Applications

  • Synchronous rectification for ATX / Server / Telecom power supplies
  • Motor drives
  • Uninterruptible power supplies (UPS)
  • Micro solar inverters

Q & A

  1. What is the maximum drain to source voltage (VDSS) of the FDP150N10A-F102?
    The maximum drain to source voltage (VDSS) is 100 V.
  2. What is the continuous drain current (ID) rating at 25°C and 100°C?
    The continuous drain current (ID) is 50 A at 25°C and 36 A at 100°C.
  3. What is the typical on-state resistance (RDS(on)) of the FDP150N10A-F102?
    The typical on-state resistance (RDS(on)) is 12.5 mΩ at VGS = 10 V, ID = 50 A.
  4. What is the gate threshold voltage (VGS(th)) range?
    The gate threshold voltage (VGS(th)) range is from 2.0 V to 4.0 V.
  5. What are the thermal resistance values for junction to case and junction to ambient?
    The thermal resistance from junction to case (RθJC) is 1.6 °C/W, and from junction to ambient (RθJA) is 62.5 °C/W.
  6. Is the FDP150N10A-F102 RoHS compliant?
    Yes, the FDP150N10A-F102 is RoHS compliant.
  7. What are some typical applications of the FDP150N10A-F102?
    Typical applications include synchronous rectification for ATX / Server / Telecom power supplies, motor drives, uninterruptible power supplies (UPS), and micro solar inverters.
  8. What is the maximum pulsed drain current (IDM) rating?
    The maximum pulsed drain current (IDM) is 200 A.
  9. What is the total gate charge (Qg(tot)) at VGS = 10 V?
    The total gate charge (Qg(tot)) at VGS = 10 V is typically 16.2 nC.
  10. What is the operating and storage temperature range for the FDP150N10A-F102?
    The operating and storage temperature range is from -55°C to +175°C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:15mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:21 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1440 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):91W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$2.70
290

Please send RFQ , we will respond immediately.

Same Series
FDP150N10A
FDP150N10A
MOSFET N-CH 100V 50A TO220-3

Related Product By Categories

NTH4LN019N65S3H
NTH4LN019N65S3H
onsemi
POWER MOSFET, N-CHANNEL, SUPERFE
STP19NF20
STP19NF20
STMicroelectronics
MOSFET N-CH 200V 15A TO220AB
2N7002 TR PBFREE
2N7002 TR PBFREE
Central Semiconductor Corp
MOSFET N-CH 60V 115MA SOT23
CSD19536KTTT
CSD19536KTTT
Texas Instruments
MOSFET N-CH 100V 200A DDPAK
IPW65R080CFDAFKSA1
IPW65R080CFDAFKSA1
Infineon Technologies
MOSFET N-CH 650V 43.3A TO247-3
BUK7Y4R4-40EX
BUK7Y4R4-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 100A LFPAK56
NTMFS4C55NT1G
NTMFS4C55NT1G
onsemi
MOSFET N-CH 30V 78A SO8FL
STW48N60M6-4
STW48N60M6-4
STMicroelectronics
MOSFET N-CH 600V 39A TO247-4
2N7002BKM,315
2N7002BKM,315
Nexperia USA Inc.
MOSFET N-CH 60V 450MA DFN1006-3
BSH112,235
BSH112,235
NXP USA Inc.
MOSFET N-CH 60V 300MA TO236AB
STS12NH3LL
STS12NH3LL
STMicroelectronics
MOSFET N-CH 30V 12A 8SO
FDC658APG
FDC658APG
onsemi
MOSFET P-CH 30V 4A SSOT6

Related Product By Brand

MMSZ5272BT3G
MMSZ5272BT3G
onsemi
DIODE ZENER 110V 500MW SOD123
NVMFS5C410NLWFT3G
NVMFS5C410NLWFT3G
onsemi
MOSFET N-CH 40V 48A/315A 5DFN
NB3U1548CDR2G
NB3U1548CDR2G
onsemi
IC CLK BUFFER 160MHZ 8SOIC
NB3N502DR2G
NB3N502DR2G
onsemi
IC MULTIPLIER CLOCK PLL 8-SOIC
MC74HC04AFL1
MC74HC04AFL1
onsemi
IC INVERTER 6CH 1-INP SOEIAJ-14
MC74HC00ADG
MC74HC00ADG
onsemi
IC GATE NAND 4CH 2-INP 14SOIC
MC100EP16VBDTG
MC100EP16VBDTG
onsemi
IC RCVR/DRVR ECL DIFF 5V 8TSSOP
NCP1252ADR2G
NCP1252ADR2G
onsemi
IC OFFLINE SWITCH MULT TOP 8SOIC
FAN7385MX
FAN7385MX
onsemi
IC GATE DRVR HIGH-SIDE 14SOP
LV8711T-TLM-H
LV8711T-TLM-H
onsemi
IC MTR DRV BIPLR 2.7-5.5V 24SSOP
NCV7707DQCR2G
NCV7707DQCR2G
onsemi
IC DOOR MODULE DRIVER 36SSOP
MC78PC30NTRG
MC78PC30NTRG
onsemi
IC REG LINEAR 3V 150MA 5TSOP