FDP150N10A-F102
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onsemi FDP150N10A-F102

Manufacturer No:
FDP150N10A-F102
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET N-CH 100V 50A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDP150N10A-F102 is an N-Channel MOSFET produced by onsemi, utilizing their advanced POWERTRENCH process. This technology is designed to minimize on-state resistance while maintaining superior switching performance. The device is packaged in a TO-220 case and is known for its high power and current handling capabilities, making it suitable for a variety of high-performance applications.

Key Specifications

ParameterUnitMinTypMax
Drain to Source Voltage (VDSS)V--100
Gate to Source Voltage (VGSS)V--±20
Continuous Drain Current (ID)A--50 (at TC = 25°C), 36 (at TC = 100°C)
Pulsed Drain Current (IDM)A--200
Static Drain to Source On Resistance (RDS(on))-12.515.0
Gate Threshold Voltage (VGS(th))V2.0-4.0
Total Gate Charge (Qg(tot))nC-16.221.0
Thermal Resistance, Junction to Case (RθJC)°C/W--1.6
Thermal Resistance, Junction to Ambient (RθJA)°C/W--62.5

Key Features

  • Low on-state resistance (RDS(on) = 12.5 mΩ typical at VGS = 10 V, ID = 50 A)
  • Fast switching speed
  • Low gate charge (QG = 16.2 nC typical)
  • High performance trench technology for extremely low RDS(on)
  • High power and current handling capability
  • RoHS compliant

Applications

  • Synchronous rectification for ATX / Server / Telecom power supplies
  • Motor drives
  • Uninterruptible power supplies (UPS)
  • Micro solar inverters

Q & A

  1. What is the maximum drain to source voltage (VDSS) of the FDP150N10A-F102?
    The maximum drain to source voltage (VDSS) is 100 V.
  2. What is the continuous drain current (ID) rating at 25°C and 100°C?
    The continuous drain current (ID) is 50 A at 25°C and 36 A at 100°C.
  3. What is the typical on-state resistance (RDS(on)) of the FDP150N10A-F102?
    The typical on-state resistance (RDS(on)) is 12.5 mΩ at VGS = 10 V, ID = 50 A.
  4. What is the gate threshold voltage (VGS(th)) range?
    The gate threshold voltage (VGS(th)) range is from 2.0 V to 4.0 V.
  5. What are the thermal resistance values for junction to case and junction to ambient?
    The thermal resistance from junction to case (RθJC) is 1.6 °C/W, and from junction to ambient (RθJA) is 62.5 °C/W.
  6. Is the FDP150N10A-F102 RoHS compliant?
    Yes, the FDP150N10A-F102 is RoHS compliant.
  7. What are some typical applications of the FDP150N10A-F102?
    Typical applications include synchronous rectification for ATX / Server / Telecom power supplies, motor drives, uninterruptible power supplies (UPS), and micro solar inverters.
  8. What is the maximum pulsed drain current (IDM) rating?
    The maximum pulsed drain current (IDM) is 200 A.
  9. What is the total gate charge (Qg(tot)) at VGS = 10 V?
    The total gate charge (Qg(tot)) at VGS = 10 V is typically 16.2 nC.
  10. What is the operating and storage temperature range for the FDP150N10A-F102?
    The operating and storage temperature range is from -55°C to +175°C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:15mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:21 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1440 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):91W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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FDP150N10A
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