Overview
The FDP150N10A-F102 is an N-Channel MOSFET produced by onsemi, utilizing their advanced POWERTRENCH process. This technology is designed to minimize on-state resistance while maintaining superior switching performance. The device is packaged in a TO-220 case and is known for its high power and current handling capabilities, making it suitable for a variety of high-performance applications.
Key Specifications
Parameter | Unit | Min | Typ | Max |
---|---|---|---|---|
Drain to Source Voltage (VDSS) | V | - | - | 100 |
Gate to Source Voltage (VGSS) | V | - | - | ±20 |
Continuous Drain Current (ID) | A | - | - | 50 (at TC = 25°C), 36 (at TC = 100°C) |
Pulsed Drain Current (IDM) | A | - | - | 200 |
Static Drain to Source On Resistance (RDS(on)) | mΩ | - | 12.5 | 15.0 |
Gate Threshold Voltage (VGS(th)) | V | 2.0 | - | 4.0 |
Total Gate Charge (Qg(tot)) | nC | - | 16.2 | 21.0 |
Thermal Resistance, Junction to Case (RθJC) | °C/W | - | - | 1.6 |
Thermal Resistance, Junction to Ambient (RθJA) | °C/W | - | - | 62.5 |
Key Features
- Low on-state resistance (RDS(on) = 12.5 mΩ typical at VGS = 10 V, ID = 50 A)
- Fast switching speed
- Low gate charge (QG = 16.2 nC typical)
- High performance trench technology for extremely low RDS(on)
- High power and current handling capability
- RoHS compliant
Applications
- Synchronous rectification for ATX / Server / Telecom power supplies
- Motor drives
- Uninterruptible power supplies (UPS)
- Micro solar inverters
Q & A
- What is the maximum drain to source voltage (VDSS) of the FDP150N10A-F102?
The maximum drain to source voltage (VDSS) is 100 V. - What is the continuous drain current (ID) rating at 25°C and 100°C?
The continuous drain current (ID) is 50 A at 25°C and 36 A at 100°C. - What is the typical on-state resistance (RDS(on)) of the FDP150N10A-F102?
The typical on-state resistance (RDS(on)) is 12.5 mΩ at VGS = 10 V, ID = 50 A. - What is the gate threshold voltage (VGS(th)) range?
The gate threshold voltage (VGS(th)) range is from 2.0 V to 4.0 V. - What are the thermal resistance values for junction to case and junction to ambient?
The thermal resistance from junction to case (RθJC) is 1.6 °C/W, and from junction to ambient (RθJA) is 62.5 °C/W. - Is the FDP150N10A-F102 RoHS compliant?
Yes, the FDP150N10A-F102 is RoHS compliant. - What are some typical applications of the FDP150N10A-F102?
Typical applications include synchronous rectification for ATX / Server / Telecom power supplies, motor drives, uninterruptible power supplies (UPS), and micro solar inverters. - What is the maximum pulsed drain current (IDM) rating?
The maximum pulsed drain current (IDM) is 200 A. - What is the total gate charge (Qg(tot)) at VGS = 10 V?
The total gate charge (Qg(tot)) at VGS = 10 V is typically 16.2 nC. - What is the operating and storage temperature range for the FDP150N10A-F102?
The operating and storage temperature range is from -55°C to +175°C.