FDP027N08B-F102
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onsemi FDP027N08B-F102

Manufacturer No:
FDP027N08B-F102
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET N-CH 80V 120A TO220-3
Delivery:
Payment:
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Product Introduction

Overview

The FDP027N08B-F102 is a high-performance N-channel MOSFET produced by onsemi. This device is designed to offer high efficiency and reliability in various power management applications. It features a TO-220 package, making it suitable for a wide range of industrial and consumer electronics. The MOSFET is known for its low on-resistance and high current handling capabilities, making it an excellent choice for power switching and amplification tasks.

Key Specifications

ParameterMinTypMaxUnit
Drain to Source Breakdown Voltage (BVDSS)80--V
On-Resistance (Rds(on)) at 10V, 100A-2.21-
Maximum Power Dissipation (Pd)-246-W
Threshold Voltage (Vth) at 250μA-2.5-V
Package Type-TO-220--

Key Features

  • Low on-resistance (Rds(on)) of 2.21 mΩ at 10V, 100A, ensuring high efficiency in power switching applications.
  • High current handling capability, making it suitable for high-power applications.
  • High drain to source breakdown voltage (BVDSS) of 80V, providing robust protection against voltage spikes.
  • Maximum power dissipation of 246W, allowing for reliable operation in demanding environments.
  • Threshold voltage (Vth) of 2.5V at 250μA, ensuring stable and predictable switching behavior.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-frequency switching applications.
  • Automotive systems, including battery management and power steering.
  • Industrial control systems and automation.

Q & A

  1. What is the package type of the FDP027N08B-F102 MOSFET?
    The FDP027N08B-F102 MOSFET is packaged in a TO-220 package.
  2. What is the maximum drain to source breakdown voltage (BVDSS) of the FDP027N08B-F102?
    The maximum BVDSS is 80V.
  3. What is the typical on-resistance (Rds(on)) of the FDP027N08B-F102 at 10V, 100A?
    The typical Rds(on) is 2.21 mΩ.
  4. What is the maximum power dissipation (Pd) of the FDP027N08B-F102?
    The maximum Pd is 246W.
  5. What is the threshold voltage (Vth) of the FDP027N08B-F102 at 250μA?
    The threshold voltage is 2.5V.
  6. In what types of applications is the FDP027N08B-F102 commonly used?
    The FDP027N08B-F102 is commonly used in power supplies, motor control systems, high-frequency switching applications, automotive systems, and industrial control systems.
  7. Is the FDP027N08B-F102 RoHS compliant?
    Yes, the FDP027N08B-F102 is RoHS compliant.
  8. What is the typical current handling capability of the FDP027N08B-F102?
    The FDP027N08B-F102 can handle high currents, with specifications indicating it can handle up to 223A.
  9. Where can I find detailed specifications for the FDP027N08B-F102?
    Detailed specifications can be found in the datasheet available on the onsemi website, as well as on distributor websites like Mouser and LCSC.
  10. What are the benefits of using the FDP027N08B-F102 in power switching applications?
    The benefits include low on-resistance, high current handling, and high breakdown voltage, which contribute to high efficiency and reliability.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.7mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:178 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:13530 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):246W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Same Series
FDP027N08B
FDP027N08B
MOSFET N-CH 80V 120A TO220-3

Similar Products

Part Number FDP027N08B-F102 FDP023N08B-F102
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 75 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc) 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 2.7mOhm @ 100A, 10V 2.35mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 178 nC @ 10 V 195 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 13530 pF @ 40 V 13765 pF @ 37.5 V
FET Feature - -
Power Dissipation (Max) 246W (Tc) 245W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3

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