FDN86265P
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onsemi FDN86265P

Manufacturer No:
FDN86265P
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 150V 800MA SUPERSOT3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDN86265P is a P-Channel PowerTrench® MOSFET produced by onsemi, formerly known as Fairchild Semiconductor. This MOSFET is fabricated using onsemi's advanced PowerTrench process, which is optimized for low on-state resistance while maintaining superior switching performance. The device is designed to provide high efficiency and reliability in various power management applications.

Key Specifications

ParameterValue
Transistor PolarityP-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage150 V
Id - Continuous Drain Current-0.8 A
Pd - Power Dissipation1.5 W
Package / CaseSSOT-3 (SuperSOT-3)

Key Features

  • Low on-state resistance (Rds(on)) for high efficiency
  • High drain-source breakdown voltage (Vds) of 150 V
  • Continuous drain current (Id) of -0.8 A
  • Power dissipation (Pd) of 1.5 W
  • Compact SSOT-3 (SuperSOT-3) package for space-saving designs
  • Advanced PowerTrench process for superior switching performance

Applications

The FDN86265P P-Channel MOSFET is suitable for a variety of power management applications, including:

  • DC-DC converters and power supplies
  • Motor control and drive systems
  • Power amplifiers and audio systems
  • Switching regulators and voltage regulators
  • General-purpose power switching

Q & A

  1. What is the drain-source breakdown voltage of the FDN86265P?
    The drain-source breakdown voltage (Vds) is 150 V.
  2. What is the continuous drain current rating of the FDN86265P?
    The continuous drain current (Id) is -0.8 A.
  3. What is the power dissipation rating of the FDN86265P?
    The power dissipation (Pd) is 1.5 W.
  4. What package type is the FDN86265P available in?
    The FDN86265P is available in the SSOT-3 (SuperSOT-3) package.
  5. What is the manufacturing process used for the FDN86265P?
    The FDN86265P is fabricated using onsemi's advanced PowerTrench process.
  6. Is the FDN86265P still in production?
    No, the FDN86265P is discontinued and not in production.
  7. What are some common applications for the FDN86265P?
    Common applications include DC-DC converters, motor control systems, power amplifiers, switching regulators, and general-purpose power switching.
  8. Where can I find detailed specifications for the FDN86265P?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser Electronics and RS Components.
  9. What is the polarity of the FDN86265P MOSFET?
    The FDN86265P is a P-Channel MOSFET.
  10. How many channels does the FDN86265P have?
    The FDN86265P has 1 channel.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:800mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:1.2Ohm @ 800mA, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:4.1 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:210 pF @ 75 V
FET Feature:- 
Power Dissipation (Max):1.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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