FDMS8D8N15C
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onsemi FDMS8D8N15C

Manufacturer No:
FDMS8D8N15C
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 150V 12.2A/85A 8PQFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMS8D8N15C is a high-performance N-Channel Shielded Gate MOSFET produced by onsemi. This device is part of the POWERTRENCH family, known for its advanced technology that enhances power efficiency and reliability. The FDMS8D8N15C is designed to handle high current and voltage requirements, making it suitable for a variety of power management applications.

Key Specifications

ParameterValue
Drain-Source Breakdown Voltage (Vds)150 V
Continuous Drain Current (Id)85 A
Drain-Source Resistance (Rds(on)) at Vgs = 10 V, ID = 45 A8.8 mΩ
Drain-Source Resistance (Rds(on)) at Vgs = 8 V, ID = 22.5 A9.4 mΩ
Maximum Drain Current (Idm)340 A
Power Dissipation (Pd)132 W

Key Features

  • Shielded Gate technology for improved performance and reliability.
  • High current handling capability with a maximum drain current of 340 A.
  • Low on-resistance (Rds(on)) of 8.8 mΩ at Vgs = 10 V, ID = 45 A.
  • High power dissipation of up to 132 W.
  • Suitable for high-frequency applications due to its advanced POWERTRENCH technology.

Applications

The FDMS8D8N15C is versatile and can be used in various power management and high-current applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-frequency switching applications.
  • Automotive systems requiring high reliability and performance.
  • Industrial power management systems.

Q & A

  1. What is the maximum drain-source breakdown voltage of the FDMS8D8N15C?
    The maximum drain-source breakdown voltage is 150 V.
  2. What is the continuous drain current rating of the FDMS8D8N15C?
    The continuous drain current rating is 85 A.
  3. What is the on-resistance (Rds(on)) of the FDMS8D8N15C at Vgs = 10 V and ID = 45 A?
    The on-resistance is 8.8 mΩ.
  4. What is the maximum power dissipation of the FDMS8D8N15C?
    The maximum power dissipation is 132 W.
  5. What technology is used in the FDMS8D8N15C?
    The FDMS8D8N15C uses Shielded Gate POWERTRENCH technology.
  6. What are some common applications for the FDMS8D8N15C?
    Common applications include power supplies, motor control systems, high-frequency switching applications, automotive systems, and industrial power management systems.
  7. What is the maximum drain current (Idm) of the FDMS8D8N15C?
    The maximum drain current is 340 A.
  8. How does the Shielded Gate technology benefit the performance of the FDMS8D8N15C?
    The Shielded Gate technology improves performance and reliability by reducing gate charge and increasing switching speed.
  9. Is the FDMS8D8N15C suitable for high-frequency applications?
    Yes, it is suitable for high-frequency applications due to its advanced POWERTRENCH technology.
  10. Where can I find detailed specifications for the FDMS8D8N15C?
    Detailed specifications can be found in the datasheet available on onsemi's official website and other electronic component distributors like Mouser and TME.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:12.2A (Ta), 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On):8V, 10V
Rds On (Max) @ Id, Vgs:8.8mOhm @ 45A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:50 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3600 pF @ 75 V
FET Feature:- 
Power Dissipation (Max):2.7W (Ta), 132W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PQFN (5x6)
Package / Case:8-PowerTDFN
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