Overview
The FDMS86200E is an N-Channel MOSFET produced by onsemi, utilizing their advanced POWERTRENCH® process with Shielded Gate technology. This MOSFET is designed to optimize on-state resistance while maintaining superior switching performance. Although the FDMS86200E is listed as obsolete and no longer manufactured, the FDMS86200 remains available as a similar substitute.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS (Drain to Source Voltage) | 150 | V |
| ID (Continuous Drain Current at TA = 25°C) | 9.6 | A |
| ID (Continuous Drain Current at TC = 100°C) | 35 | A |
| RDS(on) (Static Drain to Source On Resistance at VGS = 10 V, ID = 9.6 A) | 15 - 18 | mΩ |
| RDS(on) (Static Drain to Source On Resistance at VGS = 6 V, ID = 8.8 A) | 17 - 21 | mΩ |
| VGS(th) (Gate to Source Threshold Voltage) | - | V |
| RθJC (Thermal Resistance, Junction to Case) | 1.2 | °C/W |
| RθJA (Thermal Resistance, Junction to Ambient) | 50 | °C/W |
Key Features
- Shielded Gate MOSFET Technology for improved performance and reliability.
- Low RDS(on) for reduced power losses and increased efficiency.
- Advanced POWERTRENCH® process for optimized on-state resistance and superior switching performance.
- High current handling capability with continuous drain current up to 9.6 A at TA = 25°C and 35 A at TC = 100°C.
- Compact Power 56 (PQFN8) package, Pb-Free and Halogen Free.
Applications
- Power supplies and DC-DC converters.
- Motor control and drive systems.
- High-frequency switching applications.
- Automotive and industrial power management systems.
- Renewable energy systems, such as solar and wind power inverters.
Q & A
- What is the maximum drain to source voltage (VDS) of the FDMS86200?
The maximum drain to source voltage (VDS) is 150 V.
- What is the continuous drain current (ID) at TA = 25°C?
The continuous drain current (ID) at TA = 25°C is 9.6 A.
- What is the typical RDS(on) at VGS = 10 V and ID = 9.6 A?
The typical RDS(on) at VGS = 10 V and ID = 9.6 A is between 15 and 18 mΩ.
- What is the thermal resistance (RθJC) from junction to case?
The thermal resistance (RθJC) from junction to case is 1.2 °C/W.
- Is the FDMS86200E still in production?
No, the FDMS86200E is listed as obsolete and no longer manufactured. However, the FDMS86200 remains available as a similar substitute.
- What package type is used for the FDMS86200?
The FDMS86200 uses the Power 56 (PQFN8) package, which is Pb-Free and Halogen Free.
- What are some common applications for the FDMS86200?
Common applications include power supplies, DC-DC converters, motor control systems, high-frequency switching applications, and automotive and industrial power management systems.
- What is the gate to source threshold voltage (VGS(th)) range for the FDMS86200?
The specific range for VGS(th) is not provided in the summary, but it can be found in the detailed datasheet.
- How does the Shielded Gate technology benefit the MOSFET's performance?
The Shielded Gate technology improves the MOSFET's performance by reducing the on-state resistance and enhancing switching characteristics.
- What is the maximum junction temperature (TJ) for the FDMS86200?
The maximum junction temperature (TJ) is typically 150°C, though specific conditions may vary based on the application.
