FDMS86101DC
  • Share:

onsemi FDMS86101DC

Manufacturer No:
FDMS86101DC
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 14.5A DLCOOL56
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMS86101DC is a high-performance N-Channel MOSFET produced by onsemi, utilizing their advanced POWERTRENCH® process. This technology is designed to minimize on-state resistance while maintaining superior switching performance. The device is housed in a UDFN8 package, which offers a robust and compact design suitable for various high-power applications.

Key Specifications

ParameterValueUnit
Drain to Source Breakdown Voltage (BVDSS)100V
Maximum Continuous Drain Current (ID)60A
On-State Resistance (RDS(on)) at VGS = 10 V, ID = 13 A8 mΩ
On-State Resistance (RDS(on)) at VGS = 6 V, ID = 9.5 A13.5 mΩ
Gate to Source Threshold Voltage (VGS(th))4 VV
Zero Gate Voltage Drain Current (IDSS)800 nAnA
Gate to Source Leakage Current (IGSS)100 nAnA
Maximum Power Dissipation (PD)125 WW
Package TypeUDFN8-

Key Features

  • Advanced POWERTRENCH® process for low on-state resistance and high efficiency.
  • Robust UDFN8 package design with MSL1 rating.
  • 100% UIL and Rg tested for reliability.
  • Pb-free and RoHS compliant.
  • High current handling capability up to 60 A.
  • Low thermal resistance, enhancing heat dissipation.

Applications

The FDMS86101DC MOSFET is suitable for a variety of high-power applications, including:

  • DC-DC conversion.
  • Power supplies.
  • Motor control.
  • Industrial power systems.
  • Automotive systems.

Q & A

  1. What is the maximum drain to source breakdown voltage of the FDMS86101DC?
    The maximum drain to source breakdown voltage is 100 V.
  2. What is the maximum continuous drain current of the FDMS86101DC?
    The maximum continuous drain current is 60 A.
  3. What is the on-state resistance of the FDMS86101DC at VGS = 10 V and ID = 13 A?
    The on-state resistance is 8 mΩ.
  4. Is the FDMS86101DC Pb-free and RoHS compliant?
    Yes, the FDMS86101DC is Pb-free and RoHS compliant.
  5. What package type is used for the FDMS86101DC?
    The FDMS86101DC is housed in a UDFN8 package.
  6. What are some typical applications of the FDMS86101DC?
    Typical applications include DC-DC conversion, power supplies, motor control, industrial power systems, and automotive systems.
  7. What is the gate to source threshold voltage of the FDMS86101DC?
    The gate to source threshold voltage is approximately 4 V.
  8. What is the maximum power dissipation of the FDMS86101DC?
    The maximum power dissipation is 125 W.
  9. Is the FDMS86101DC tested for reliability?
    Yes, the FDMS86101DC is 100% UIL and Rg tested for reliability.
  10. What is the thermal resistance of the FDMS86101DC?
    The thermal resistance (RJA) is determined based on the mounting conditions, with values such as 50 °C/W and 125 °C/W depending on the copper pad size and board design.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:14.5A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:7.5mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:44 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3135 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):3.2W (Ta), 125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PQFN (5x6)
Package / Case:8-PowerTDFN
0 Remaining View Similar

In Stock

$4.45
98

Please send RFQ , we will respond immediately.

Related Product By Categories

CSD17575Q3
CSD17575Q3
Texas Instruments
MOSFET N-CH 30V 60A 8VSON
FCD380N60E
FCD380N60E
onsemi
MOSFET N-CH 600V 10.2A DPAK
2N7002-TP
2N7002-TP
Micro Commercial Co
MOSFET N-CH 60V 115MA SOT23
STP36NF06L
STP36NF06L
STMicroelectronics
MOSFET N-CH 60V 30A TO220AB
FCH040N65S3-F155
FCH040N65S3-F155
onsemi
MOSFET N-CH 650V 65A TO247-3
STB33N60M2
STB33N60M2
STMicroelectronics
MOSFET N-CH 600V 26A D2PAK
NX7002AKVL
NX7002AKVL
Nexperia USA Inc.
MOSFET N-CH 60V 190MA TO236AB
STU10N60M2
STU10N60M2
STMicroelectronics
MOSFET N-CH 600V 7.5A IPAK
STW48NM60N
STW48NM60N
STMicroelectronics
MOSFET N-CH 600V 44A TO247
STW15NB50
STW15NB50
STMicroelectronics
MOSFET N-CH 500V 14.6A TO247-3
STD85N3LH5
STD85N3LH5
STMicroelectronics
MOSFET N-CH 30V 80A DPAK
PMV65XP/MIR
PMV65XP/MIR
Nexperia USA Inc.
MOSFET P-CH 20V 2.8A TO236AB

Related Product By Brand

BAS16M3T5G
BAS16M3T5G
onsemi
DIODE GEN PURP 100V 200MA SOT723
1N5366BRL
1N5366BRL
onsemi
DIODE ZENER 39V 5W AXIAL
2N6284G
2N6284G
onsemi
TRANS NPN DARL 100V 20A TO204
2N7002LT3
2N7002LT3
onsemi
MOSFET N-CH 60V 115MA SOT23-3
PCA9654EDTR2G
PCA9654EDTR2G
onsemi
IC I/O EXPANDER 8BIT I2C 16TSSOP
MC74AC273DWR2G
MC74AC273DWR2G
onsemi
IC FF D-TYPE SNGL 8BIT 20SOIC
MC74VHC1GT08EDFT2G
MC74VHC1GT08EDFT2G
onsemi
IC GATE AND 1CH 2-INP SC88A
MC100EP16VBDTG
MC100EP16VBDTG
onsemi
IC RCVR/DRVR ECL DIFF 5V 8TSSOP
CAT24C16YI-GT3JN
CAT24C16YI-GT3JN
onsemi
IC EEPROM 16KBIT I2C 8TSSOP
MC33153DR2
MC33153DR2
onsemi
IC GATE DRVR LOW-SIDE 8SOIC
NCP432BISNT1G
NCP432BISNT1G
onsemi
IC VREF SHUNT ADJ 0.5% SOT23-3
NCP103AMX180TCG
NCP103AMX180TCG
onsemi
IC REG LINEAR 1.8V 150MA 4UDFN