FDMS86101DC
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onsemi FDMS86101DC

Manufacturer No:
FDMS86101DC
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 14.5A DLCOOL56
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMS86101DC is a high-performance N-Channel MOSFET produced by onsemi, utilizing their advanced POWERTRENCH® process. This technology is designed to minimize on-state resistance while maintaining superior switching performance. The device is housed in a UDFN8 package, which offers a robust and compact design suitable for various high-power applications.

Key Specifications

ParameterValueUnit
Drain to Source Breakdown Voltage (BVDSS)100V
Maximum Continuous Drain Current (ID)60A
On-State Resistance (RDS(on)) at VGS = 10 V, ID = 13 A8 mΩ
On-State Resistance (RDS(on)) at VGS = 6 V, ID = 9.5 A13.5 mΩ
Gate to Source Threshold Voltage (VGS(th))4 VV
Zero Gate Voltage Drain Current (IDSS)800 nAnA
Gate to Source Leakage Current (IGSS)100 nAnA
Maximum Power Dissipation (PD)125 WW
Package TypeUDFN8-

Key Features

  • Advanced POWERTRENCH® process for low on-state resistance and high efficiency.
  • Robust UDFN8 package design with MSL1 rating.
  • 100% UIL and Rg tested for reliability.
  • Pb-free and RoHS compliant.
  • High current handling capability up to 60 A.
  • Low thermal resistance, enhancing heat dissipation.

Applications

The FDMS86101DC MOSFET is suitable for a variety of high-power applications, including:

  • DC-DC conversion.
  • Power supplies.
  • Motor control.
  • Industrial power systems.
  • Automotive systems.

Q & A

  1. What is the maximum drain to source breakdown voltage of the FDMS86101DC?
    The maximum drain to source breakdown voltage is 100 V.
  2. What is the maximum continuous drain current of the FDMS86101DC?
    The maximum continuous drain current is 60 A.
  3. What is the on-state resistance of the FDMS86101DC at VGS = 10 V and ID = 13 A?
    The on-state resistance is 8 mΩ.
  4. Is the FDMS86101DC Pb-free and RoHS compliant?
    Yes, the FDMS86101DC is Pb-free and RoHS compliant.
  5. What package type is used for the FDMS86101DC?
    The FDMS86101DC is housed in a UDFN8 package.
  6. What are some typical applications of the FDMS86101DC?
    Typical applications include DC-DC conversion, power supplies, motor control, industrial power systems, and automotive systems.
  7. What is the gate to source threshold voltage of the FDMS86101DC?
    The gate to source threshold voltage is approximately 4 V.
  8. What is the maximum power dissipation of the FDMS86101DC?
    The maximum power dissipation is 125 W.
  9. Is the FDMS86101DC tested for reliability?
    Yes, the FDMS86101DC is 100% UIL and Rg tested for reliability.
  10. What is the thermal resistance of the FDMS86101DC?
    The thermal resistance (RJA) is determined based on the mounting conditions, with values such as 50 °C/W and 125 °C/W depending on the copper pad size and board design.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:14.5A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:7.5mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:44 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3135 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):3.2W (Ta), 125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PQFN (5x6)
Package / Case:8-PowerTDFN
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