Overview
The FDMS6673BZ is a P-Channel PowerTrench® MOSFET produced by onsemi, designed to offer high performance and low on-state resistance. This device is optimized for load switching applications, particularly in notebook computers and server systems, as well as in power management for notebook battery packs. The advanced PowerTrench technology and robust package design ensure minimal losses and high reliability.
Key Specifications
| Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VDS (Drain to Source Voltage) | -30 | -30 | V | ||
| VGS (Gate to Source Voltage) | ±25 | ±25 | V | ||
| ID (Continuous Drain Current) | TA = 25°C | -52 | -52 | A | |
| ID (Pulsed Drain Current) | -422 | -422 | A | ||
| PD (Maximum Power Dissipation) | TA = 25°C | 73 | 73 | W | |
| TJ, TSTG (Operating and Storage Junction Temperature Range) | -55 to +150 | -55 to +150 | °C | ||
| RDS(on) at VGS = -10 V, ID = -15.2 A | 5.2 | 6.8 | 6.8 | mΩ | |
| RDS(on) at VGS = -4.5 V, ID = -11.2 A | 7.8 | 12.5 | 12.5 | mΩ | |
| gFS (Forward Transconductance) | VDS = -5 V, ID = -15.2 A | 76 | S |
Key Features
- Advanced PowerTrench technology for extremely low RDS(on)
- Max RDS(on) = 6.8 mΩ at VGS = -10 V, ID = -15.2 A
- Max RDS(on) = 12.5 mΩ at VGS = -4.5 V, ID = -11.2 A
- HBM ESD Protection Level of 8 kV Typical
- MSL1 Robust Package Design
- Pb-Free, Halide Free, and RoHS Compliant
- High Power and Current Handling Capability
Applications
- Load Switch in Notebook and Server Systems
- Notebook Battery Pack Power Management
Q & A
- What is the maximum drain to source voltage (VDS) for the FDMS6673BZ MOSFET?
The maximum drain to source voltage (VDS) is -30 V. - What is the continuous drain current (ID) rating for this MOSFET at 25°C?
The continuous drain current (ID) rating is -52 A. - What is the typical on-state resistance (RDS(on)) at VGS = -10 V and ID = -15.2 A?
The typical on-state resistance (RDS(on)) is 6.8 mΩ. - Does the FDMS6673BZ have ESD protection?
Yes, it has an HBM ESD Protection Level of 8 kV Typical. - What is the operating and storage junction temperature range for this device?
The operating and storage junction temperature range is -55 to +150°C. - Is the FDMS6673BZ RoHS compliant?
Yes, it is Pb-Free, Halide Free, and RoHS Compliant. - What are the typical applications for the FDMS6673BZ MOSFET?
Typical applications include load switching in notebook and server systems, and power management in notebook battery packs. - What is the maximum power dissipation (PD) for this MOSFET at 25°C?
The maximum power dissipation (PD) is 73 W. - What is the thermal resistance from junction to ambient (RJA) for this device?
The thermal resistance from junction to ambient (RJA) is 50°C/W. - What is the forward transconductance (gFS) at VDS = -5 V and ID = -15.2 A?
The forward transconductance (gFS) is 76 S.
