FDMS039N08B
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onsemi FDMS039N08B

Manufacturer No:
FDMS039N08B
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 80V 19.4A/100A 8PQFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMS039N08B is a high-performance N-Channel MOSFET produced by onsemi, designed for a wide range of power management applications. This device is part of the POWERTRENCH® family, known for its advanced trench technology that enhances power efficiency and reduces thermal resistance. The FDMS039N08B is packaged in an 8-PQFN (5x6) surface mount configuration, making it suitable for compact and high-density designs.

Key Specifications

ParameterValue
Voltage Rating (Vds)80 V
Continuous Drain Current (Id)19.4 A (Ta), 100 A (Tc)
Maximum Drain-Source On-Resistance (Rds(on))3.2 mΩ (Typ.) @ Vgs = 10 V, Id = 50 A
Power Dissipation (Pd)2.5 W (Ta), 104 W (Tc)
Reverse Recovery Charge (Qrr)80 nC
Package Type8-PQFN (5x6)

Key Features

  • Low Rds(on) * QG figure of merit for improved power efficiency.
  • Soft Reverse Recovery Body Diode to reduce switching losses.
  • High current handling capability with a maximum drain current of 100 A (Tc).
  • Compact 8-PQFN (5x6) surface mount package for high-density designs.
  • High voltage rating of 80 V, suitable for various power management applications.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Automotive and industrial power management.
  • Renewable energy systems, such as solar and wind power.
  • High-power audio amplifiers and other high-current applications.

Q & A

  1. What is the voltage rating of the FDMS039N08B MOSFET?
    The voltage rating of the FDMS039N08B MOSFET is 80 V.
  2. What is the maximum continuous drain current for the FDMS039N08B?
    The maximum continuous drain current is 19.4 A (Ta) and 100 A (Tc).
  3. What is the typical Rds(on) value for the FDMS039N08B?
    The typical Rds(on) value is 3.2 mΩ at Vgs = 10 V and Id = 50 A.
  4. What package type is the FDMS039N08B available in?
    The FDMS039N08B is available in an 8-PQFN (5x6) surface mount package.
  5. What is the reverse recovery charge (Qrr) for the FDMS039N08B?
    The reverse recovery charge (Qrr) is 80 nC.
  6. What are some common applications for the FDMS039N08B?
    Common applications include power supplies, motor control systems, automotive and industrial power management, renewable energy systems, and high-power audio amplifiers.
  7. What is the power dissipation capability of the FDMS039N08B?
    The power dissipation capability is 2.5 W (Ta) and 104 W (Tc).
  8. Does the FDMS039N08B have a soft reverse recovery body diode?
    Yes, the FDMS039N08B features a soft reverse recovery body diode.
  9. What is the maximum drain current (Idm) for the FDMS039N08B?
    The maximum drain current (Idm) is 400 A.
  10. Where can I find detailed specifications for the FDMS039N08B?
    Detailed specifications can be found in the datasheet available on onsemi's official website or through distributors like Mouser and TME.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:19.4A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:100 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7600 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 104W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PQFN (5x6)
Package / Case:8-PowerTDFN
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Similar Products

Part Number FDMS039N08B FDMS037N08B
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 75 V
Current - Continuous Drain (Id) @ 25°C 19.4A (Ta), 100A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 3.9mOhm @ 50A, 10V 3.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 100 nC @ 10 V 100 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 7600 pF @ 40 V 5915 pF @ 37.5 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta), 104W (Tc) 830mW (Ta), 104.2W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-PQFN (5x6) 8-PQFN (5x6)
Package / Case 8-PowerTDFN 8-PowerTDFN

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