FDMC86184
  • Share:

onsemi FDMC86184

Manufacturer No:
FDMC86184
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 57A 8PQFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMC86184 is an N-Channel MOSFET produced by onsemi, utilizing advanced PowerTrench® technology with Shielded Gate architecture. This device is designed to offer high performance and reliability in various power management applications. The MOSFET is packaged in an 8-pin PQFN8 package, making it suitable for space-constrained designs while maintaining high current handling capabilities.

Key Specifications

ParameterValue
Voltage Rating (Vds)100 V
Continuous Drain Current (Id)57 A
On-Resistance (Rds(on))8.5 mΩ @ 10 V, 21 A
Package TypePQFN-8 (3.3x3.3 mm)
Gate Threshold Voltage (Vgs(th))4 V
Power Dissipation (Pd)54 W

Key Features

  • Advanced PowerTrench® process with Shielded Gate technology for improved performance and reliability.
  • Low on-resistance (Rds(on)) of 8.5 mΩ @ 10 V, 21 A.
  • High continuous drain current of 57 A.
  • Compact PQFN-8 package for space-efficient designs.
  • RoHS compliant.

Applications

The FDMC86184 N-Channel MOSFET is suitable for a variety of applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Automotive systems, such as battery management and power steering.
  • Industrial control systems and power management modules.

Q & A

  1. What is the voltage rating of the FDMC86184 MOSFET?
    The voltage rating (Vds) of the FDMC86184 MOSFET is 100 V.
  2. What is the continuous drain current of the FDMC86184?
    The continuous drain current (Id) of the FDMC86184 is 57 A.
  3. What is the on-resistance of the FDMC86184?
    The on-resistance (Rds(on)) of the FDMC86184 is 8.5 mΩ @ 10 V, 21 A.
  4. What package type is used for the FDMC86184?
    The FDMC86184 is packaged in an 8-pin PQFN-8 (3.3x3.3 mm) package.
  5. Is the FDMC86184 RoHS compliant?
    Yes, the FDMC86184 is RoHS compliant.
  6. What is the gate threshold voltage of the FDMC86184?
    The gate threshold voltage (Vgs(th)) of the FDMC86184 is 4 V.
  7. What are some common applications for the FDMC86184?
    The FDMC86184 is commonly used in power supplies, DC-DC converters, motor control systems, automotive systems, and industrial control systems.
  8. What is the power dissipation of the FDMC86184?
    The power dissipation (Pd) of the FDMC86184 is 54 W.
  9. What technology is used in the FDMC86184?
    The FDMC86184 uses advanced PowerTrench® technology with Shielded Gate architecture.
  10. Where can I find more detailed specifications for the FDMC86184?
    You can find detailed specifications for the FDMC86184 in the datasheet available on onsemi’s official website or through distributors like Mouser, RS Components, and LCSC.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:57A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:8.5mOhm @ 21A, 10V
Vgs(th) (Max) @ Id:4V @ 110µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 6 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2090 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):54W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PQFN (3.3x3.3)
Package / Case:8-PowerWDFN
0 Remaining View Similar

In Stock

$2.21
168

Please send RFQ , we will respond immediately.

Similar Products

Part Number FDMC86184 FDMC86183
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 57A (Tc) 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 8.5mOhm @ 21A, 10V 12.8mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 110µA 4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 6 V 21 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2090 pF @ 50 V 1515 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 54W (Tc) 52W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-PQFN (3.3x3.3) 8-PQFN (3.3x3.3), Power33
Package / Case 8-PowerWDFN 8-PowerWDFN

Related Product By Categories

FDMT80040DC
FDMT80040DC
onsemi
MOSFET N-CH 40V 420A 8PQFN
IRFP4468PBF
IRFP4468PBF
Infineon Technologies
MOSFET N-CH 100V 195A TO247AC
IRF3710PBF
IRF3710PBF
Infineon Technologies
MOSFET N-CH 100V 57A TO220AB
FQA70N10
FQA70N10
onsemi
MOSFET N-CH 100V 70A TO3PN
FCD3400N80Z
FCD3400N80Z
onsemi
MOSFET N-CH 800V 2A DPAK
FDS4465
FDS4465
onsemi
MOSFET P-CH 20V 13.5A 8SOIC
PSMN0R9-25YLDX
PSMN0R9-25YLDX
Nexperia USA Inc.
MOSFET N-CH 25V 300A LFPAK56
BUK762R6-60E,118
BUK762R6-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 120A D2PAK
BBS3002-TL-1E
BBS3002-TL-1E
onsemi
MOSFET P-CH 60V 100A D2PAK
BUK9880-55A,115
BUK9880-55A,115
NXP USA Inc.
MOSFET N-CH 55V 7A SOT223
FQD13N10LTM_NBEL001
FQD13N10LTM_NBEL001
onsemi
MOSFET N-CH 100V 10A DPAK
STF13NM60N-H
STF13NM60N-H
STMicroelectronics
MOSFET N-CH 600V 11A TO220FP

Related Product By Brand

NZL7V5AXV3T1G
NZL7V5AXV3T1G
onsemi
TVS DIODE 5VWM 8.8VC SC89-3
1SMA5942BT3G
1SMA5942BT3G
onsemi
DIODE ZENER 51V 1.5W SMA
MJD3055T4G
MJD3055T4G
onsemi
TRANS NPN 60V 10A DPAK
NVMFS5C410NLWFT3G
NVMFS5C410NLWFT3G
onsemi
MOSFET N-CH 40V 48A/315A 5DFN
MC33074APG
MC33074APG
onsemi
IC OPAMP JFET 4 CIRCUIT 14DIP
LC709203FXE-01MH
LC709203FXE-01MH
onsemi
IC BATT MON LI-ION 1CELL 9WLCSP
NCS29001DR2G
NCS29001DR2G
onsemi
IC LED DRIVER CTRLR PWM 14SOIC
MC33064SN-5T1
MC33064SN-5T1
onsemi
IC SUPERVISOR 1 CHANNEL 5TSOP
MC78L18ABPG
MC78L18ABPG
onsemi
IC REG LINEAR 18V 100MA TO92-3
MC78M05BDTT5G
MC78M05BDTT5G
onsemi
IC REG LINEAR 5V 500MA DPAK
MC33375ST-3.0T3
MC33375ST-3.0T3
onsemi
IC REG LINEAR 3V 300MA SOT223
FODM217CR2V
FODM217CR2V
onsemi
OPTOCOUPLER PHOTOTRANS MFP4