FDMC86139P
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onsemi FDMC86139P

Manufacturer No:
FDMC86139P
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 100V 4.4A/15A 8MLP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMC86139P is a P-Channel MOSFET produced by onsemi, utilizing their advanced PowerTrench® technology. This high-density process is designed to minimize on-state resistance and optimize switching performance. The device is particularly suited for fast switching applications and load switch applications. It is also 100% UIL tested, Pb-free, and RoHS compliant.

Key Specifications

Parameter Rating Unit
VDS (Drain to Source Voltage) 100 V
VGS (Gate to Source Voltage) ±25 V
ID (Drain Current) Continuous at TC = 25°C -15 A A
ID (Drain Current) Pulsed at TC = 25°C -4.4 A A
rDS(on) (Static Drain to Source On Resistance) at VGS = -10 V, ID = -4.4 A 67 mΩ
rDS(on) (Static Drain to Source On Resistance) at VGS = -6 V, ID = -3.6 A 89 mΩ
PD (Power Dissipation) at TC = 25°C 40 W W
TJ, TSTG (Operating and Storage Junction Temperature Range) -55 to +150 °C °C
RθJC (Thermal Resistance, Junction to Case) 3.1 °C/W °C/W
RθJA (Thermal Resistance, Junction to Ambient) 53 °C/W °C/W

Key Features

  • Very low RDS-On mid voltage P-Channel silicon technology optimized for low Qg.
  • Optimized for fast switching applications and load switch applications.
  • 100% UIL tested.
  • Pb-free and RoHS compliant.
  • Advanced PowerTrench® technology to minimize on-state resistance and enhance switching performance.

Applications

  • Active Clamp Switch.
  • Load Switch.

Q & A

  1. What is the maximum drain to source voltage (VDS) of the FDMC86139P MOSFET?

    The maximum drain to source voltage (VDS) is 100 V.

  2. What is the maximum continuous drain current (ID) at TC = 25°C?

    The maximum continuous drain current (ID) at TC = 25°C is -15 A.

  3. What is the typical on-state resistance (rDS(on)) at VGS = -10 V and ID = -4.4 A?

    The typical on-state resistance (rDS(on)) at VGS = -10 V and ID = -4.4 A is 67 mΩ.

  4. Is the FDMC86139P Pb-free and RoHS compliant?

    Yes, the FDMC86139P is Pb-free and RoHS compliant.

  5. What are the typical applications of the FDMC86139P MOSFET?

    The typical applications include active clamp switches and load switches.

  6. What is the thermal resistance (RθJC) from junction to case?

    The thermal resistance (RθJC) from junction to case is 3.1 °C/W.

  7. What is the operating and storage junction temperature range (TJ, TSTG)?

    The operating and storage junction temperature range (TJ, TSTG) is -55 to +150 °C.

  8. What is the maximum power dissipation (PD) at TC = 25°C?

    The maximum power dissipation (PD) at TC = 25°C is 40 W.

  9. Is the FDMC86139P still in production?

    No, the FDMC86139P is obsolete and not in production.

  10. What technology is used in the production of the FDMC86139P?

    The FDMC86139P is produced using onsemi’s advanced PowerTrench® technology.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:4.4A (Ta), 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:67mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1335 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):2.3W (Ta), 40W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-MLP (3.3x3.3)
Package / Case:8-PowerWDFN
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