FDMC7678
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onsemi FDMC7678

Manufacturer No:
FDMC7678
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 17.5A/19.5A 8MLP
Delivery:
Payment:
iso14001
iso45001
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iso13485

Product Introduction

Overview

The FDMC7678 is an N-Channel Power Trench® MOSFET produced by onsemi. This device is fabricated using an advanced Power Trench process, which is specifically designed to minimize on-state resistance, enhancing its efficiency and performance in various power management applications. The FDMC7678 is part of onsemi's low to medium voltage MOSFET family, making it suitable for a wide range of electronic systems that require reliable and efficient power handling.

Key Specifications

ParameterRatingsUnit
Drain to Source Voltage (VDS)30V
Gate to Source Voltage (VGS)±20V
Drain Current (ID)-A
On-State Resistance (Rds(on))-

Key Features

  • Advanced Power Trench process for low on-state resistance
  • High efficiency and reliability in power management applications
  • Low to medium voltage operation (30V VDS)
  • Robust gate to source voltage tolerance (±20V VGS)
  • Suitable for high-frequency switching applications

Applications

The FDMC7678 is versatile and can be used in a variety of applications, including but not limited to:

  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • Switching regulators and inverters
  • Automotive and industrial power systems
  • Consumer electronics requiring efficient power management

Q & A

  1. What is the maximum drain to source voltage (VDS) of the FDMC7678?
    The maximum drain to source voltage (VDS) of the FDMC7678 is 30V.
  2. What is the gate to source voltage (VGS) range for the FDMC7678?
    The gate to source voltage (VGS) range for the FDMC7678 is ±20V.
  3. What process is used to fabricate the FDMC7678?
    The FDMC7678 is fabricated using an advanced Power Trench process.
  4. What are some typical applications of the FDMC7678?
    The FDMC7678 is typically used in power supplies, DC-DC converters, motor control systems, switching regulators, and automotive/industrial power systems.
  5. Why is the FDMC7678 preferred for high-frequency switching applications?
    The FDMC7678 is preferred for high-frequency switching applications due to its low on-state resistance and high efficiency.
  6. Where can I find detailed specifications for the FDMC7678?
    Detailed specifications for the FDMC7678 can be found in the datasheet available on onsemi's official website or through distributors like Digi-Key and Mouser.
  7. Is the FDMC7678 suitable for consumer electronics?
    Yes, the FDMC7678 is suitable for consumer electronics that require efficient power management.
  8. What is the significance of the Power Trench process in the FDMC7678?
    The Power Trench process minimizes on-state resistance, enhancing the efficiency and performance of the FDMC7678.
  9. Can the FDMC7678 be used in automotive systems?
    Yes, the FDMC7678 can be used in automotive systems due to its robust specifications and reliability.
  10. How do I ensure proper handling and storage of the FDMC7678?
    Proper handling and storage of the FDMC7678 should follow the guidelines provided in the datasheet and any relevant application notes from onsemi.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:17.5A (Ta), 19.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5.3mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:39 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2410 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2.3W (Ta), 31W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-MLP (3.3x3.3)
Package / Case:8-PowerWDFN
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Similar Products

Part Number FDMC7678 FDMC7672
Manufacturer onsemi Fairchild Semiconductor
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 17.5A (Ta), 19.5A (Tc) 16.9A (Ta), 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 5.3mOhm @ 17.5A, 10V 5.7mOhm @ 16.9A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V 57 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2410 pF @ 15 V 3890 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 2.3W (Ta), 31W (Tc) 2.3W (Ta), 33W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-MLP (3.3x3.3) 8-MLP (3.3x3.3)
Package / Case 8-PowerWDFN 8-PowerWDFN

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