Overview
The FDMC6679AZ is a P-Channel PowerTrench® MOSFET produced by ON Semiconductor. This device is designed to minimize losses in load switch applications, leveraging advancements in both silicon and package technologies. It features a low on-resistance (rDS(on)) and high ESD protection, making it suitable for various power management tasks. Although the product is currently obsolete and not in production, it remains relevant for reference and legacy system maintenance.
Key Specifications
| Parameter | Value | Units |
|---|---|---|
| Drain to Source Voltage (VDS) | -30 | V |
| Gate to Source Voltage (VGS) | ±25 | V |
| Continuous Drain Current (ID) | -20 | A |
| Pulsed Drain Current (ID) | -32 | A |
| Power Dissipation (PD) at TC = 25°C | 41 | W |
| Power Dissipation (PD) at TA = 25°C | 2.3 | W |
| Junction Temperature Range (TJ, TSTG) | -55 to +150 | °C |
| Thermal Resistance, Junction to Case (RθJC) | 3.0 | °C/W |
| Thermal Resistance, Junction to Ambient (RθJA) | 53 | °C/W |
| Static Drain to Source On Resistance (rDS(on)) at VGS = -10 V, ID = -11.5 A | 8.6 - 10 | mΩ |
| Static Drain to Source On Resistance (rDS(on)) at VGS = -4.5 V, ID = -8.5 A | 12 - 18 | mΩ |
| HBM ESD Protection Level | 8 kV (typical) |
Key Features
- Low on-resistance (rDS(on)) of 8.6 - 10 mΩ at VGS = -10 V, ID = -11.5 A and 12 - 18 mΩ at VGS = -4.5 V, ID = -8.5 A.
- High ESD protection level of 8 kV typical.
- Extended VGS range (-25 V) suitable for battery applications.
- High performance trench technology for extremely low rDS(on).
- High power and current handling capability.
- Lead-free and RoHS compliant termination.
Applications
- Load switch in notebook and server applications.
- Notebook battery pack power management.
Q & A
- What is the maximum drain to source voltage (VDS) of the FDMC6679AZ?
The maximum drain to source voltage (VDS) is -30 V. - What is the continuous drain current (ID) rating of the FDMC6679AZ?
The continuous drain current (ID) rating is -20 A. - What is the thermal resistance, junction to case (RθJC), of the FDMC6679AZ?
The thermal resistance, junction to case (RθJC), is 3.0 °C/W. - What is the HBM ESD protection level of the FDMC6679AZ?
The HBM ESD protection level is 8 kV typical. - What are the typical applications of the FDMC6679AZ?
The FDMC6679AZ is typically used in load switch applications for notebooks and servers, and in notebook battery pack power management. - Is the FDMC6679AZ still in production?
No, the FDMC6679AZ is obsolete and not in production. - What is the gate to source threshold voltage (VGS(th)) range of the FDMC6679AZ?
The gate to source threshold voltage (VGS(th)) range is -1 to -3 V. - What is the maximum power dissipation (PD) at TC = 25°C for the FDMC6679AZ?
The maximum power dissipation (PD) at TC = 25°C is 41 W. - Is the FDMC6679AZ RoHS compliant?
Yes, the FDMC6679AZ is lead-free and RoHS compliant. - What is the junction temperature range (TJ, TSTG) of the FDMC6679AZ?
The junction temperature range (TJ, TSTG) is -55 to +150 °C.
