Overview
The FDMC6675BZ-T is a P-Channel PowerTrench® MOSFET designed and manufactured by onsemi. This device is optimized to minimize losses in load switch applications, leveraging advancements in both silicon and package technologies. It offers extremely low RDS(on) and enhanced ESD protection, making it suitable for high-performance and high-current handling applications.
Key Specifications
| Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VDS (Drain to Source Voltage) | - | - | - | -30 | V |
| VGS (Gate to Source Voltage) | - | - | - | ±25 | V |
| ID (Drain Current) - Continuous (Package Limited) | TC = 25°C | - | - | -20 | A |
| ID (Drain Current) - Continuous (Silicon Limited) | TC = 25°C | - | - | -40 | A |
| ID (Drain Current) - Pulsed | - | - | - | -32 | A |
| PD (Power Dissipation) - TC = 25°C | - | - | - | 36 | W |
| RDS(on) - Static Drain to Source On Resistance | VGS = -10 V, ID = -9.5 A | - | 10.7 | 14.4 | mΩ |
| RDS(on) - Static Drain to Source On Resistance | VGS = -4.5 V, ID = -6.9 A | - | 17.4 | 27.0 | mΩ |
| TJ, TSTG (Operating and Storage Junction Temperature Range) | - | -55 | - | 150 | °C |
| RJC (Thermal Resistance, Junction to Case) | - | - | - | 3.4 | °C/W |
| RJA (Thermal Resistance, Junction to Ambient) | - | - | - | 53 | °C/W |
Key Features
- Extremely low RDS(on) of 14.4 mΩ at VGS = -10 V, ID = -9.5 A and 27.0 mΩ at VGS = -4.5 V, ID = -6.9 A.
- HBM ESD Protection Level of 8 kV Typical.
- Extended VGSS Range (±25 V) for battery applications.
- High performance trench technology for low RDS(on).
- High power and current handling capability.
- Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
Applications
- Load switch in notebook and server applications.
- Notebook battery pack power management.
Q & A
- What is the maximum drain to source voltage (VDS) for the FDMC6675BZ-T?
The maximum drain to source voltage (VDS) is -30 V.
- What is the maximum continuous drain current (ID) for the FDMC6675BZ-T?
The maximum continuous drain current (ID) is -20 A at TC = 25°C (package limited) and -40 A at TC = 25°C (silicon limited).
- What is the typical ESD protection level for the FDMC6675BZ-T?
The typical ESD protection level is 8 kV (HBM).
- What is the gate to source threshold voltage (VGS(th)) range for the FDMC6675BZ-T?
The gate to source threshold voltage (VGS(th)) range is -1.0 to -3.0 V.
- What is the thermal resistance, junction to case (RJC), for the FDMC6675BZ-T?
The thermal resistance, junction to case (RJC), is 3.4 °C/W.
- Is the FDMC6675BZ-T RoHS compliant?
Yes, the FDMC6675BZ-T is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
- What are the typical applications for the FDMC6675BZ-T?
Typical applications include load switch in notebook and server, and notebook battery pack power management.
- What is the maximum power dissipation (PD) for the FDMC6675BZ-T at TC = 25°C?
The maximum power dissipation (PD) is 36 W at TC = 25°C.
- What is the turn-on delay time (td(on)) for the FDMC6675BZ-T?
The turn-on delay time (td(on)) is typically 11 to 20 ns.
- What is the reverse recovery time (trr) for the FDMC6675BZ-T?
The reverse recovery time (trr) is typically 24 to 38 ns.
