Overview
The FDMC6675BZ is a P-Channel PowerTrench® MOSFET produced by onsemi. This device is designed to minimize losses in load switch applications, leveraging advancements in both silicon and package technologies. It offers extremely low on-resistance (RDS(on)) and enhanced ESD protection, making it suitable for high-performance applications. The MOSFET is packaged in an 8-pin MLP (Micro Leadframe Package) and is lead-free, halogen-free, and RoHS compliant.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Channel Type | P-Channel | |
| Maximum Drain to Source Voltage (VDS) | -30 | V |
| Maximum Continuous Drain Current (ID) | -20 A (Package Limited), -9.5 A (Silicon Limited) | A |
| Maximum Gate to Source Voltage (VGS) | ±25 | V |
| Maximum Power Dissipation (PD) | 36 W (TC = 25°C), 2.3 W (TA = 25°C) | W |
| Operating and Storage Junction Temperature Range (TJ, TSTG) | -55 to +150 | °C |
| Thermal Resistance, Junction to Case (RθJC) | 3.4 °C/W | °C/W |
| Thermal Resistance, Junction to Ambient (RθJA) | 53 °C/W | °C/W |
| Static Drain to Source On Resistance (RDS(on)) | 14.4 mΩ at VGS = -10 V, ID = -9.5 A; 27.0 mΩ at VGS = -4.5 V, ID = -6.9 A | mΩ |
| Package Type | MLP 3.3x3.3, 0.65P | |
| Pin Count | 8 | |
| Mounting Type | Surface Mount |
Key Features
- High performance trench technology for extremely low RDS(on)
- HBM ESD protection level of 8 kV typical
- Extended VGSS range (-25 V) for battery applications
- High power and current handling capability
- Lead-free, halogen-free, and RoHS compliant
- Low junction capacitance and reverse recovery charge
- Elimination of additional external components for enhanced system reliability
Applications
- Load switch in notebook and server applications
- Notebook battery pack power management
Q & A
- What is the maximum drain to source voltage (VDS) of the FDMC6675BZ MOSFET?
The maximum drain to source voltage (VDS) is -30 V.
- What is the maximum continuous drain current (ID) of the FDMC6675BZ?
The maximum continuous drain current (ID) is -20 A (package limited) and -9.5 A (silicon limited).
- What is the thermal resistance, junction to case (RθJC), of the FDMC6675BZ?
The thermal resistance, junction to case (RθJC), is 3.4 °C/W.
- Does the FDMC6675BZ have ESD protection?
Yes, it has an HBM ESD protection level of 8 kV typical.
- What is the package type of the FDMC6675BZ?
The package type is MLP 3.3x3.3, 0.65P.
- Is the FDMC6675BZ RoHS compliant?
Yes, the FDMC6675BZ is lead-free, halogen-free, and RoHS compliant.
- What are the typical applications of the FDMC6675BZ?
The typical applications include load switch in notebook and server, and notebook battery pack power management.
- What is the maximum gate to source voltage (VGS) of the FDMC6675BZ?
The maximum gate to source voltage (VGS) is ±25 V.
- What is the static drain to source on resistance (RDS(on)) of the FDMC6675BZ?
The static drain to source on resistance (RDS(on)) is 14.4 mΩ at VGS = -10 V, ID = -9.5 A, and 27.0 mΩ at VGS = -4.5 V, ID = -6.9 A.
- What is the operating and storage junction temperature range of the FDMC6675BZ?
The operating and storage junction temperature range is -55 to +150 °C.
