FDMC5614P-L701
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onsemi FDMC5614P-L701

Manufacturer No:
FDMC5614P-L701
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 60V 8MLP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMC5614P-L701 is a P-Channel MOSFET produced by onsemi, utilizing their advanced POWERTRENCH process. This device is designed to be rugged and optimized for various power management applications. Although the product is currently discontinued, it remains relevant for understanding and replacing with similar specifications.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 60 V
ID (Continuous Drain Current at Ta) 5.7 A
ID (Continuous Drain Current at Tc) 13.5 A
PD (Power Dissipation at Ta) 2.1 W
PD (Power Dissipation at Tc) 42 W
Package Type 8-WDFN (3.3x3.3) -

Key Features

  • Rugged Gate Version: The FDMC5614P-L701 features a rugged gate design, enhancing its reliability and durability in power management applications.
  • Advanced POWERTRENCH Process: Utilizes onsemi's advanced POWERTRENCH process, which improves performance and efficiency.
  • High Current Capability: Supports high continuous drain current, making it suitable for demanding applications.
  • Compact Package: Available in an 8-WDFN (3.3x3.3) surface mount package, which is space-efficient and suitable for modern designs.

Applications

  • Power Management: Optimized for power management applications, including DC-DC converters, power supplies, and battery management systems.
  • Industrial and Automotive Systems: Suitable for use in industrial and automotive systems where high reliability and performance are required.
  • Consumer Electronics: Can be used in various consumer electronics applications that require efficient power handling.

Q & A

  1. What is the drain-source voltage rating of the FDMC5614P-L701?

    The drain-source voltage rating is 60 V.

  2. What is the continuous drain current at ambient temperature (Ta)?

    The continuous drain current at Ta is 5.7 A.

  3. What is the power dissipation at the case temperature (Tc)?

    The power dissipation at Tc is 42 W.

  4. What package type is the FDMC5614P-L701 available in?

    The device is available in an 8-WDFN (3.3x3.3) surface mount package.

  5. Is the FDMC5614P-L701 still in production?

    No, the FDMC5614P-L701 is discontinued and not in production.

  6. What process technology is used in the FDMC5614P-L701?

    The device uses onsemi's advanced POWERTRENCH process.

  7. What are some recommended replacement devices for the FDMC5614P-L701?

    onsemi recommends devices like the NTTFS5116PL as higher specification replacements.

  8. Where can I find remaining inventory of the FDMC5614P-L701 after its discontinuation?

    Remaining inventory may be available through partners like Rochester Electronics and Flip Electronics.

  9. What are the typical applications for the FDMC5614P-L701?

    Typical applications include power management, industrial and automotive systems, and consumer electronics.

  10. How do I contact onsemi for support regarding the discontinuation of the FDMC5614P-L701?

    You can contact onsemi through their local sales offices or via email at [email protected]).

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:5.7A (Ta), 13.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:100mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1055 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):2.1W (Ta), 42W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-WDFN (3.3x3.3)
Package / Case:8-PowerWDFN
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