Overview
The FDMC5614P is a P-Channel PowerTrench® MOSFET produced by onsemi. This device is a rugged gate version of onsemi’s advanced PowerTrench process, optimized for power management applications that require a wide range of gate drive voltage ratings (4.5 V to 20 V). It is designed to provide high performance, low on-resistance, and fast switching speeds, making it suitable for various power management tasks.
Key Specifications
| Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VDS (Drain to Source Voltage) | - | - | -60 | V | |
| VGS (Gate to Source Voltage) | - | - | ±20 | V | |
| ID (Drain Current Continuous) | TC = 25°C | - | -13.5 | A | |
| rDS(on) at VGS = -10 V, ID = -5.7 A | - | - | 100 | mΩ | |
| rDS(on) at VGS = -4.5 V, ID = -4.4 A | - | - | 135 | mΩ | |
| BVDSS (Drain to Source Breakdown Voltage) | ID = -250 μA, VGS = 0 V | -60 | - | - | V |
| RθJA (Thermal Resistance, Junction to Ambient) | Mounted on a 1 in² pad of 2 oz copper | - | - | 60 | °C/W |
Key Features
- Max rDS(on) = 100 mΩ at VGS = -10 V, ID = -5.7 A
- Max rDS(on) = 135 mΩ at VGS = -4.5 V, ID = -4.4 A
- Low gate charge
- Fast switching speed
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability
- Pb-free and RoHS compliant
Applications
- Power management
- Load switch
- Battery protection
Q & A
- What is the maximum drain to source voltage (VDS) of the FDMC5614P MOSFET?
The maximum drain to source voltage (VDS) is -60 V.
- What are the typical gate drive voltage ratings for the FDMC5614P?
The FDMC5614P is optimized for gate drive voltage ratings ranging from 4.5 V to 20 V.
- What is the maximum continuous drain current (ID) for the FDMC5614P?
The maximum continuous drain current (ID) is -13.5 A at TC = 25°C.
- What is the thermal resistance (RθJA) of the FDMC5614P when mounted on a 1 in² pad of 2 oz copper?
The thermal resistance (RθJA) is 60 °C/W when mounted on a 1 in² pad of 2 oz copper).
- Is the FDMC5614P Pb-free and RoHS compliant?
- What are some common applications for the FDMC5614P MOSFET?
- What is the maximum gate to source voltage (VGS) for the FDMC5614P?
The maximum gate to source voltage (VGS) is ±20 V).
- What is the typical on-resistance (rDS(on)) at VGS = -10 V and ID = -5.7 A?
The typical on-resistance (rDS(on)) is 100 mΩ at VGS = -10 V and ID = -5.7 A).
- Does the FDMC5614P have fast switching speeds?
- What is the package type of the FDMC5614P?
