FDMC3612-L701
  • Share:

onsemi FDMC3612-L701

Manufacturer No:
FDMC3612-L701
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
POWER TRENCH MOSFET N-CHANNEL 10
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMC3612-L701 is an N-Channel MOSFET produced by onsemi, utilizing their advanced POWERTRENCH process. This technology is designed to minimize on-state resistance while maintaining superior switching performance. The device is housed in a WDFN8 3.3x3.3, 0.65P package and is Pb-free and RoHS compliant. It is suitable for a variety of high-performance applications requiring low on-state resistance and high current handling capabilities.

Key Specifications

Parameter Rating/Value Unit
VDS (Drain to Source Voltage) 100 V
VGS (Gate to Source Voltage) ±20 V
ID (Drain Current Continuous) 12 A
ID (Drain Current Pulsed) 15 A
EAS (Single Pulse Avalanche Energy) 32 mJ
PD (Power Dissipation) 35 W
TJ, TSTG (Operating and Storage Junction Temperature Range) −55 to +150 °C
rDS(on) (Static Drain to Source On Resistance at VGS = 10 V, ID = 3.3 A) 92 - 110
rDS(on) (Static Drain to Source On Resistance at VGS = 6 V, ID = 3.0 A) 98 - 122
RJC (Thermal Resistance, Junction to Case) 3.5 °C/W
RJA (Thermal Resistance, Junction to Ambient) 53 °C/W

Key Features

  • Low on-state resistance (rDS(on)) of 92 - 110 mΩ at VGS = 10 V, ID = 3.3 A
  • Low profile WDFN8 3.3x3.3, 0.65P package
  • 100% UIL tested
  • Pb-free and RoHS compliant
  • High current handling capability up to 12 A continuous
  • Superior switching performance

Applications

  • DC-DC conversion
  • PSE (Power Sourcing Equipment) switch
  • Other high-performance power management applications

Q & A

  1. What is the maximum drain to source voltage (VDS) of the FDMC3612-L701?

    The maximum drain to source voltage (VDS) is 100 V.

  2. What is the continuous drain current (ID) rating of the FDMC3612-L701?

    The continuous drain current (ID) rating is 12 A.

  3. What is the typical on-state resistance (rDS(on)) at VGS = 10 V and ID = 3.3 A?

    The typical on-state resistance (rDS(on)) is 92 - 110 mΩ.

  4. Is the FDMC3612-L701 Pb-free and RoHS compliant?
  5. What are the typical applications of the FDMC3612-L701?

    The FDMC3612-L701 is typically used in DC-DC conversion and PSE switch applications.

  6. What is the thermal resistance (RJC) from junction to case?

    The thermal resistance (RJC) from junction to case is 3.5 °C/W.

  7. What is the maximum operating junction temperature (TJ) of the FDMC3612-L701?

    The maximum operating junction temperature (TJ) is 150 °C.

  8. What is the single pulse avalanche energy (EAS) rating of the FDMC3612-L701?

    The single pulse avalanche energy (EAS) rating is 32 mJ.

  9. What is the gate to source threshold voltage (VGS(th)) of the FDMC3612-L701?

    The gate to source threshold voltage (VGS(th)) is 2.0 - 4.0 V.

  10. What is the package type of the FDMC3612-L701?

    The package type is WDFN8 3.3x3.3, 0.65P.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:3.3A (Ta), 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:110mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:21 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:880 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):2.3W (Ta), 35W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-WDFN (3.3x3.3)
Package / Case:8-PowerWDFN
0 Remaining View Similar

In Stock

$1.01
113

Please send RFQ , we will respond immediately.

Same Series
DD26M2S5WV5Z/AA
DD26M2S5WV5Z/AA
CONN D-SUB HD PLUG 26P SLDR CUP
CBC47W1S10000
CBC47W1S10000
CONN D-SUB RCPT 47POS CRIMP
DD15S20LVLS
DD15S20LVLS
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HE30/AA
CBC13W3S10HE30/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S10H00/AA
DD26S10H00/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S2S0V5X
DD26S2S0V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD62M32S60V3S/AA
DD62M32S60V3S/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD26S200V50/AA
DD26S200V50/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S000
DD44S32S000
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S60TX/AA
DD44S32S60TX/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S50T2X/AA
DD44S32S50T2X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S60V3X/AA
DD44S32S60V3X/AA
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

STB170NF04
STB170NF04
STMicroelectronics
MOSFET N-CH 40V 80A D2PAK
IRF740PBF-BE3
IRF740PBF-BE3
Vishay Siliconix
MOSFET N-CH 400V 10A TO220AB
STF12N120K5
STF12N120K5
STMicroelectronics
MOSFET N-CH 1200V 12A TO220FP
BUK9635-55A,118
BUK9635-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 34A D2PAK
NVMFS6H852NLT1G
NVMFS6H852NLT1G
onsemi
MOSFET N-CH 80V 11A/42A 5DFN
FDMC4435BZ-F127-L701
FDMC4435BZ-F127-L701
onsemi
SINGLE ST3 P Z MLP3.3X3.3
NTMFS5H409NLT3G
NTMFS5H409NLT3G
onsemi
MOSFET N-CH 40V 41A/270A 5DFN
STP360N4F6
STP360N4F6
STMicroelectronics
MOSFET N-CH 40V 120A TO220
NDUL03N150CG
NDUL03N150CG
onsemi
MOSFET N-CH 1500V 2.5A TO3P
STS12NF30L
STS12NF30L
STMicroelectronics
MOSFET N-CH 30V 12A 8SO
STW6N120K3
STW6N120K3
STMicroelectronics
MOSFET N-CH 1200V 6A TO247
FDB075N15A_SN00284
FDB075N15A_SN00284
onsemi
MOSFET N-CH 150V 130A D2PAK

Related Product By Brand

NZL7V5AXV3T1G
NZL7V5AXV3T1G
onsemi
TVS DIODE 5VWM 8.8VC SC89-3
MBRS140T3H
MBRS140T3H
onsemi
DIODE SCHOTTKY
SMUN5311DW1T3G
SMUN5311DW1T3G
onsemi
TRANS NPN/PNP PREBIAS SOT363
MMBTA55LT1G
MMBTA55LT1G
onsemi
TRANS PNP 60V 0.5A SOT23-3
BD679G
BD679G
onsemi
TRANS NPN DARL 80V 4A TO126
CD4081BCN
CD4081BCN
onsemi
IC GATE AND 4CH 2-INP 14DIP
MC14528BDR2G
MC14528BDR2G
onsemi
IC MULTIVIBRATOR 90NS 16SOIC
MC33025DWR2
MC33025DWR2
onsemi
IC OFFLINE SW HALF-BRDG 16SOIC
MC33153DR2
MC33153DR2
onsemi
IC GATE DRVR LOW-SIDE 8SOIC
MC7808BTG
MC7808BTG
onsemi
IC REG LINEAR 8V 1A TO220AB
NCV86601BDT50RKG
NCV86601BDT50RKG
onsemi
IC REG LINEAR 5V 150MA DPAK-5
FODM217CR2V
FODM217CR2V
onsemi
OPTOCOUPLER PHOTOTRANS MFP4