FDMC3612-L701
  • Share:

onsemi FDMC3612-L701

Manufacturer No:
FDMC3612-L701
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
POWER TRENCH MOSFET N-CHANNEL 10
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMC3612-L701 is an N-Channel MOSFET produced by onsemi, utilizing their advanced POWERTRENCH process. This technology is designed to minimize on-state resistance while maintaining superior switching performance. The device is housed in a WDFN8 3.3x3.3, 0.65P package and is Pb-free and RoHS compliant. It is suitable for a variety of high-performance applications requiring low on-state resistance and high current handling capabilities.

Key Specifications

Parameter Rating/Value Unit
VDS (Drain to Source Voltage) 100 V
VGS (Gate to Source Voltage) ±20 V
ID (Drain Current Continuous) 12 A
ID (Drain Current Pulsed) 15 A
EAS (Single Pulse Avalanche Energy) 32 mJ
PD (Power Dissipation) 35 W
TJ, TSTG (Operating and Storage Junction Temperature Range) −55 to +150 °C
rDS(on) (Static Drain to Source On Resistance at VGS = 10 V, ID = 3.3 A) 92 - 110
rDS(on) (Static Drain to Source On Resistance at VGS = 6 V, ID = 3.0 A) 98 - 122
RJC (Thermal Resistance, Junction to Case) 3.5 °C/W
RJA (Thermal Resistance, Junction to Ambient) 53 °C/W

Key Features

  • Low on-state resistance (rDS(on)) of 92 - 110 mΩ at VGS = 10 V, ID = 3.3 A
  • Low profile WDFN8 3.3x3.3, 0.65P package
  • 100% UIL tested
  • Pb-free and RoHS compliant
  • High current handling capability up to 12 A continuous
  • Superior switching performance

Applications

  • DC-DC conversion
  • PSE (Power Sourcing Equipment) switch
  • Other high-performance power management applications

Q & A

  1. What is the maximum drain to source voltage (VDS) of the FDMC3612-L701?

    The maximum drain to source voltage (VDS) is 100 V.

  2. What is the continuous drain current (ID) rating of the FDMC3612-L701?

    The continuous drain current (ID) rating is 12 A.

  3. What is the typical on-state resistance (rDS(on)) at VGS = 10 V and ID = 3.3 A?

    The typical on-state resistance (rDS(on)) is 92 - 110 mΩ.

  4. Is the FDMC3612-L701 Pb-free and RoHS compliant?
  5. What are the typical applications of the FDMC3612-L701?

    The FDMC3612-L701 is typically used in DC-DC conversion and PSE switch applications.

  6. What is the thermal resistance (RJC) from junction to case?

    The thermal resistance (RJC) from junction to case is 3.5 °C/W.

  7. What is the maximum operating junction temperature (TJ) of the FDMC3612-L701?

    The maximum operating junction temperature (TJ) is 150 °C.

  8. What is the single pulse avalanche energy (EAS) rating of the FDMC3612-L701?

    The single pulse avalanche energy (EAS) rating is 32 mJ.

  9. What is the gate to source threshold voltage (VGS(th)) of the FDMC3612-L701?

    The gate to source threshold voltage (VGS(th)) is 2.0 - 4.0 V.

  10. What is the package type of the FDMC3612-L701?

    The package type is WDFN8 3.3x3.3, 0.65P.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:3.3A (Ta), 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:110mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:21 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:880 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):2.3W (Ta), 35W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-WDFN (3.3x3.3)
Package / Case:8-PowerWDFN
0 Remaining View Similar

In Stock

$1.01
113

Please send RFQ , we will respond immediately.

Same Series
DD15S20LV5S/AA
DD15S20LV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200V5S
DD15S200V5S
CONN D-SUB HD RCPT 15P SLDR CUP
DD44S32S60T20
DD44S32S60T20
CONN D-SUB HD RCPT 44P VERT SLDR
DD15S20JT2S/AA
DD15S20JT2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200E3X
DD26S200E3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200E2X/AA
DD26S200E2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HT20/AA
DD26S10HT20/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S2S0V3X/AA
DD26S2S0V3X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T0
DD26S2S50T0
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S3200T20
DD44S3200T20
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S60T0
DD44S32S60T0
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S0V5X
DD44S32S0V5X
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

VN2222LL-G-P003
VN2222LL-G-P003
Microchip Technology
MOSFET N-CH 60V 230MA TO92-3
2N7002-TP
2N7002-TP
Micro Commercial Co
MOSFET N-CH 60V 115MA SOT23
FDD86567-F085
FDD86567-F085
onsemi
MOSFET N-CH 60V 100A DPAK
STD4NK60ZT4
STD4NK60ZT4
STMicroelectronics
MOSFET N-CH 600V 4A DPAK
STD60NF06T4
STD60NF06T4
STMicroelectronics
MOSFET N-CH 60V 60A DPAK
STP4NK80ZFP
STP4NK80ZFP
STMicroelectronics
MOSFET N-CH 800V 3A TO220FP
STP24NM60N
STP24NM60N
STMicroelectronics
MOSFET N-CH 600V 17A TO220
STP22NM60N
STP22NM60N
STMicroelectronics
MOSFET N-CH 600V 16A TO220AB
BSS84PW
BSS84PW
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3
MTB30P06VT4G
MTB30P06VT4G
onsemi
MOSFET P-CH 60V 30A D2PAK
2N7002E-7-G
2N7002E-7-G
Diodes Incorporated
MOSFET N-CH 60V SOT23
FDMS86101E
FDMS86101E
onsemi
MOSFET N-CH 100V 12.4A/60A 8PQFN

Related Product By Brand

SZESD7461N2T5G
SZESD7461N2T5G
onsemi
TVS DIODE 16VWM 39VC 2XDFN
MMSZ4690T1G
MMSZ4690T1G
onsemi
DIODE ZENER 5.6V 500MW SOD123
1SMB5934BT3G
1SMB5934BT3G
onsemi
DIODE ZENER 24V 3W SMB
1SMB5927BT3
1SMB5927BT3
onsemi
DIODE ZENER 12V 3W SMB
SBC847BPDXV6T1G
SBC847BPDXV6T1G
onsemi
TRANS NPN/PNP 45V 0.1A SOT-363
SBC856ALT1G
SBC856ALT1G
onsemi
TRANS PNP 65V 0.1A SOT23-3
2N7002KW
2N7002KW
onsemi
MOSFET N-CH 60V 310MA SC70
NCS20072DR2G
NCS20072DR2G
onsemi
IC OPAMP GP 2 CIRCUIT 8SOIC
MC74VHC259DR2G
MC74VHC259DR2G
onsemi
IC LATCH ADDRS 8BIT CMOS 16SOIC
MC33025DWR2
MC33025DWR2
onsemi
IC OFFLINE SW HALF-BRDG 16SOIC
MC33153DR2
MC33153DR2
onsemi
IC GATE DRVR LOW-SIDE 8SOIC
MC33064SN-5T1
MC33064SN-5T1
onsemi
IC SUPERVISOR 1 CHANNEL 5TSOP