FDMC3612-L701
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onsemi FDMC3612-L701

Manufacturer No:
FDMC3612-L701
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
POWER TRENCH MOSFET N-CHANNEL 10
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMC3612-L701 is an N-Channel MOSFET produced by onsemi, utilizing their advanced POWERTRENCH process. This technology is designed to minimize on-state resistance while maintaining superior switching performance. The device is housed in a WDFN8 3.3x3.3, 0.65P package and is Pb-free and RoHS compliant. It is suitable for a variety of high-performance applications requiring low on-state resistance and high current handling capabilities.

Key Specifications

Parameter Rating/Value Unit
VDS (Drain to Source Voltage) 100 V
VGS (Gate to Source Voltage) ±20 V
ID (Drain Current Continuous) 12 A
ID (Drain Current Pulsed) 15 A
EAS (Single Pulse Avalanche Energy) 32 mJ
PD (Power Dissipation) 35 W
TJ, TSTG (Operating and Storage Junction Temperature Range) −55 to +150 °C
rDS(on) (Static Drain to Source On Resistance at VGS = 10 V, ID = 3.3 A) 92 - 110
rDS(on) (Static Drain to Source On Resistance at VGS = 6 V, ID = 3.0 A) 98 - 122
RJC (Thermal Resistance, Junction to Case) 3.5 °C/W
RJA (Thermal Resistance, Junction to Ambient) 53 °C/W

Key Features

  • Low on-state resistance (rDS(on)) of 92 - 110 mΩ at VGS = 10 V, ID = 3.3 A
  • Low profile WDFN8 3.3x3.3, 0.65P package
  • 100% UIL tested
  • Pb-free and RoHS compliant
  • High current handling capability up to 12 A continuous
  • Superior switching performance

Applications

  • DC-DC conversion
  • PSE (Power Sourcing Equipment) switch
  • Other high-performance power management applications

Q & A

  1. What is the maximum drain to source voltage (VDS) of the FDMC3612-L701?

    The maximum drain to source voltage (VDS) is 100 V.

  2. What is the continuous drain current (ID) rating of the FDMC3612-L701?

    The continuous drain current (ID) rating is 12 A.

  3. What is the typical on-state resistance (rDS(on)) at VGS = 10 V and ID = 3.3 A?

    The typical on-state resistance (rDS(on)) is 92 - 110 mΩ.

  4. Is the FDMC3612-L701 Pb-free and RoHS compliant?
  5. What are the typical applications of the FDMC3612-L701?

    The FDMC3612-L701 is typically used in DC-DC conversion and PSE switch applications.

  6. What is the thermal resistance (RJC) from junction to case?

    The thermal resistance (RJC) from junction to case is 3.5 °C/W.

  7. What is the maximum operating junction temperature (TJ) of the FDMC3612-L701?

    The maximum operating junction temperature (TJ) is 150 °C.

  8. What is the single pulse avalanche energy (EAS) rating of the FDMC3612-L701?

    The single pulse avalanche energy (EAS) rating is 32 mJ.

  9. What is the gate to source threshold voltage (VGS(th)) of the FDMC3612-L701?

    The gate to source threshold voltage (VGS(th)) is 2.0 - 4.0 V.

  10. What is the package type of the FDMC3612-L701?

    The package type is WDFN8 3.3x3.3, 0.65P.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:3.3A (Ta), 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:110mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:21 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:880 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):2.3W (Ta), 35W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-WDFN (3.3x3.3)
Package / Case:8-PowerWDFN
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