FDMC007N08LC
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onsemi FDMC007N08LC

Manufacturer No:
FDMC007N08LC
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CHANNEL 80V 66A 8PQFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMC007N08LC is an N-Channel MV MOSFET produced by onsemi, utilizing their advanced PowerTrench® process with Shielded Gate technology. This technology is optimized to minimize on-state resistance while maintaining superior switching performance and a best-in-class soft body diode. The device is designed for high-performance applications requiring low on-state resistance and reduced switching noise/EMI.

Key Specifications

ParameterValueUnit
Drain to Source Voltage (VDS)80V
Gate to Source Voltage (VGS)±20V
Continuous Drain Current (ID) at TC = 25°C66A
Continuous Drain Current (ID) at TC = 100°C42A
Pulsed Drain Current (ID)330A
Power Dissipation (PD) at TC = 25°C57W
Operating and Storage Junction Temperature Range (TJ, TSTG)-55 to +150°C
Thermal Resistance, Junction to Case (RJC)2.2°C/W
Thermal Resistance, Junction to Ambient (RJA)53°C/W
Static Drain to Source On Resistance (RDS(on)) at VGS = 10 V, ID = 21 A7.0
Static Drain to Source On Resistance (RDS(on)) at VGS = 4.5 V, ID = 17 A10.4

Key Features

  • Shielded Gate MOSFET Technology
  • Max RDS(on) = 7.0 mΩ at VGS = 10 V, ID = 21 A
  • Max RDS(on) = 10.4 mΩ at VGS = 4.5 V, ID = 17 A
  • 5 V Drive Capable
  • 50% Lower Qrr than Other MOSFET Suppliers
  • Lowers Switching Noise/EMI
  • MSL1 Robust Package Design
  • 100% UIL Tested
  • Pb-Free, Halide Free, and RoHS Compliant

Applications

  • Primary DC-DC MOSFET
  • Synchronous Rectifier in DC-DC and AC-DC
  • Motor Drive
  • Solar Applications

Q & A

  1. What is the maximum drain to source voltage (VDS) of the FDMC007N08LC?
    The maximum drain to source voltage (VDS) is 80 V.
  2. What is the continuous drain current (ID) at TC = 25°C?
    The continuous drain current (ID) at TC = 25°C is 66 A.
  3. What is the thermal resistance, junction to case (RJC), of the FDMC007N08LC?
    The thermal resistance, junction to case (RJC), is 2.2 °C/W.
  4. Is the FDMC007N08LC RoHS compliant?
    Yes, the FDMC007N08LC is Pb-Free, Halide Free, and RoHS compliant.
  5. What are the typical applications of the FDMC007N08LC?
    The typical applications include primary DC-DC MOSFET, synchronous rectifier in DC-DC and AC-DC, motor drive, and solar applications.
  6. What is the maximum power dissipation (PD) at TC = 25°C?
    The maximum power dissipation (PD) at TC = 25°C is 57 W.
  7. What is the gate to source threshold voltage (VGS(th)) range?
    The gate to source threshold voltage (VGS(th)) range is 1.0 to 2.5 V.
  8. Does the FDMC007N08LC have a robust package design?
    Yes, it has an MSL1 robust package design.
  9. Is the FDMC007N08LC 100% UIL tested?
    Yes, the device is 100% UIL tested.
  10. What is the reverse recovery charge (Qrr) of the FDMC007N08LC?
    The reverse recovery charge (Qrr) is typically 27 to 43 nC.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:66A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:7mOhm @ 21A, 10V
Vgs(th) (Max) @ Id:2.5V @ 120µA
Gate Charge (Qg) (Max) @ Vgs:41 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2940 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):57W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PQFN (3.3x3.3), Power33
Package / Case:8-PowerWDFN
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$2.31
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