FDMC007N08LC
  • Share:

onsemi FDMC007N08LC

Manufacturer No:
FDMC007N08LC
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CHANNEL 80V 66A 8PQFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMC007N08LC is an N-Channel MV MOSFET produced by onsemi, utilizing their advanced PowerTrench® process with Shielded Gate technology. This technology is optimized to minimize on-state resistance while maintaining superior switching performance and a best-in-class soft body diode. The device is designed for high-performance applications requiring low on-state resistance and reduced switching noise/EMI.

Key Specifications

ParameterValueUnit
Drain to Source Voltage (VDS)80V
Gate to Source Voltage (VGS)±20V
Continuous Drain Current (ID) at TC = 25°C66A
Continuous Drain Current (ID) at TC = 100°C42A
Pulsed Drain Current (ID)330A
Power Dissipation (PD) at TC = 25°C57W
Operating and Storage Junction Temperature Range (TJ, TSTG)-55 to +150°C
Thermal Resistance, Junction to Case (RJC)2.2°C/W
Thermal Resistance, Junction to Ambient (RJA)53°C/W
Static Drain to Source On Resistance (RDS(on)) at VGS = 10 V, ID = 21 A7.0
Static Drain to Source On Resistance (RDS(on)) at VGS = 4.5 V, ID = 17 A10.4

Key Features

  • Shielded Gate MOSFET Technology
  • Max RDS(on) = 7.0 mΩ at VGS = 10 V, ID = 21 A
  • Max RDS(on) = 10.4 mΩ at VGS = 4.5 V, ID = 17 A
  • 5 V Drive Capable
  • 50% Lower Qrr than Other MOSFET Suppliers
  • Lowers Switching Noise/EMI
  • MSL1 Robust Package Design
  • 100% UIL Tested
  • Pb-Free, Halide Free, and RoHS Compliant

Applications

  • Primary DC-DC MOSFET
  • Synchronous Rectifier in DC-DC and AC-DC
  • Motor Drive
  • Solar Applications

Q & A

  1. What is the maximum drain to source voltage (VDS) of the FDMC007N08LC?
    The maximum drain to source voltage (VDS) is 80 V.
  2. What is the continuous drain current (ID) at TC = 25°C?
    The continuous drain current (ID) at TC = 25°C is 66 A.
  3. What is the thermal resistance, junction to case (RJC), of the FDMC007N08LC?
    The thermal resistance, junction to case (RJC), is 2.2 °C/W.
  4. Is the FDMC007N08LC RoHS compliant?
    Yes, the FDMC007N08LC is Pb-Free, Halide Free, and RoHS compliant.
  5. What are the typical applications of the FDMC007N08LC?
    The typical applications include primary DC-DC MOSFET, synchronous rectifier in DC-DC and AC-DC, motor drive, and solar applications.
  6. What is the maximum power dissipation (PD) at TC = 25°C?
    The maximum power dissipation (PD) at TC = 25°C is 57 W.
  7. What is the gate to source threshold voltage (VGS(th)) range?
    The gate to source threshold voltage (VGS(th)) range is 1.0 to 2.5 V.
  8. Does the FDMC007N08LC have a robust package design?
    Yes, it has an MSL1 robust package design.
  9. Is the FDMC007N08LC 100% UIL tested?
    Yes, the device is 100% UIL tested.
  10. What is the reverse recovery charge (Qrr) of the FDMC007N08LC?
    The reverse recovery charge (Qrr) is typically 27 to 43 nC.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:66A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:7mOhm @ 21A, 10V
Vgs(th) (Max) @ Id:2.5V @ 120µA
Gate Charge (Qg) (Max) @ Vgs:41 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2940 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):57W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PQFN (3.3x3.3), Power33
Package / Case:8-PowerWDFN
0 Remaining View Similar

In Stock

$2.31
269

Please send RFQ , we will respond immediately.

Related Product By Categories

BSS123NH6327XTSA1
BSS123NH6327XTSA1
Infineon Technologies
MOSFET N-CH 100V 190MA SOT23-3
NTS4173PT1G
NTS4173PT1G
onsemi
MOSFET P-CH 30V 1.2A SC70-3
STD9N40M2
STD9N40M2
STMicroelectronics
MOSFET N-CH 400V 6A DPAK
BUK7Y2R0-40HX
BUK7Y2R0-40HX
Nexperia USA Inc.
MOSFET N-CH 40V 120A LFPAK56
STF13N65M2
STF13N65M2
STMicroelectronics
MOSFET N-CH 650V 10A TO220FP
STB80NF55-06T4
STB80NF55-06T4
STMicroelectronics
MOSFET N-CH 55V 80A D2PAK
STF9N60M2
STF9N60M2
STMicroelectronics
MOSFET N-CH 600V 5.5A TO220FP
STW48NM60N
STW48NM60N
STMicroelectronics
MOSFET N-CH 600V 44A TO247
STP24N65M2
STP24N65M2
STMicroelectronics
MOSFET N-CH 650V 16A TO220
NVMFS6B25NLT1G
NVMFS6B25NLT1G
onsemi
MOSFET N-CH 100V 8A/33A 5DFN
2N7002E-7-G
2N7002E-7-G
Diodes Incorporated
MOSFET N-CH 60V SOT23
BSS138W-7-F-79
BSS138W-7-F-79
Diodes Incorporated
DIODE

Related Product By Brand

MURF860G
MURF860G
onsemi
DIODE GEN PURP 600V 8A TO220FP
NRVBD1035VCTLT4G
NRVBD1035VCTLT4G
onsemi
DIODE SCHOTTKY DPAK
1N5333BRLG
1N5333BRLG
onsemi
DIODE ZENER 3.3V 5W AXIAL
SMUN5313DW1T1G
SMUN5313DW1T1G
onsemi
TRANS PREBIAS 1NPN 1PNP 50V SC88
FDS8935
FDS8935
onsemi
MOSFET 2P-CH 80V 2.1A 8SOIC
NB3U1548CDR2G
NB3U1548CDR2G
onsemi
IC CLK BUFFER 160MHZ 8SOIC
MC74HC4051ADWR2G
MC74HC4051ADWR2G
onsemi
IC MUX/DEMUX 8X1 16SOIC
MC74HC04AFL1
MC74HC04AFL1
onsemi
IC INVERTER 6CH 1-INP SOEIAJ-14
MC74VHC259DR2G
MC74VHC259DR2G
onsemi
IC LATCH ADDRS 8BIT CMOS 16SOIC
CAT24C16YI-GT3JN
CAT24C16YI-GT3JN
onsemi
IC EEPROM 16KBIT I2C 8TSSOP
ADP3110AKRZ
ADP3110AKRZ
onsemi
IC GATE DRVR HALF-BRIDGE 8SOIC
MC34161DMR2G
MC34161DMR2G
onsemi
IC SUPERVISOR 2 CHANNEL MICRO8